K. Ikeda, M. Inagaki, N. Kojima, Y. Ohshita, M. Yamaguchi
{"title":"化学束外延生长的GaAsN中N-H键优先取向","authors":"K. Ikeda, M. Inagaki, N. Kojima, Y. Ohshita, M. Yamaguchi","doi":"10.1109/PVSC.2013.6744886","DOIUrl":null,"url":null,"abstract":"Two N-H local vibration modes at 961 and 2952 cm-1 in GaAsN grown by the chemical beam epitaxy have the same preferential N-H bond orientation. The integrated IR absorption intensities showed the two-fold rotational symmetry in (001) plane, which means that the N-H bond directions tend to align along [1-10] in (001) plane. However, the vibration modes at 961 and 2952 cm-1 were indicated to belong to the different types of N-H complexes. Therefore, the different types of N-H complexes have the same preferential N-H bond orientation.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"53 1 1","pages":"2092-2094"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Preferential N-H bond orientation in GaAsN grown by chemical beam epitaxy\",\"authors\":\"K. Ikeda, M. Inagaki, N. Kojima, Y. Ohshita, M. Yamaguchi\",\"doi\":\"10.1109/PVSC.2013.6744886\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two N-H local vibration modes at 961 and 2952 cm-1 in GaAsN grown by the chemical beam epitaxy have the same preferential N-H bond orientation. The integrated IR absorption intensities showed the two-fold rotational symmetry in (001) plane, which means that the N-H bond directions tend to align along [1-10] in (001) plane. However, the vibration modes at 961 and 2952 cm-1 were indicated to belong to the different types of N-H complexes. Therefore, the different types of N-H complexes have the same preferential N-H bond orientation.\",\"PeriodicalId\":6350,\"journal\":{\"name\":\"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)\",\"volume\":\"53 1 1\",\"pages\":\"2092-2094\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2013.6744886\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2013.6744886","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Preferential N-H bond orientation in GaAsN grown by chemical beam epitaxy
Two N-H local vibration modes at 961 and 2952 cm-1 in GaAsN grown by the chemical beam epitaxy have the same preferential N-H bond orientation. The integrated IR absorption intensities showed the two-fold rotational symmetry in (001) plane, which means that the N-H bond directions tend to align along [1-10] in (001) plane. However, the vibration modes at 961 and 2952 cm-1 were indicated to belong to the different types of N-H complexes. Therefore, the different types of N-H complexes have the same preferential N-H bond orientation.
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