Preferential N-H bond orientation in GaAsN grown by chemical beam epitaxy

Abstract

Two N-H local vibration modes at 961 and 2952 cm-1 in GaAsN grown by the chemical beam epitaxy have the same preferential N-H bond orientation. The integrated IR absorption intensities showed the two-fold rotational symmetry in (001) plane, which means that the N-H bond directions tend to align along [1-10] in (001) plane. However, the vibration modes at 961 and 2952 cm-1 were indicated to belong to the different types of N-H complexes. Therefore, the different types of N-H complexes have the same preferential N-H bond orientation.