2008 International Conference on Electronic Packaging Technology & High Density Packaging最新文献

筛选
英文 中文
The influence of low level doping of Ni on the microstructure and reliability of SAC solder joint 低含量Ni掺杂对SAC焊点组织和可靠性的影响
Zhenqing Zhao, Lei Wang, Xiaoqiang Xie, Qian Wang, Jaisung Lee
{"title":"The influence of low level doping of Ni on the microstructure and reliability of SAC solder joint","authors":"Zhenqing Zhao, Lei Wang, Xiaoqiang Xie, Qian Wang, Jaisung Lee","doi":"10.1109/ICEPT.2008.4607050","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607050","url":null,"abstract":"In this paper, the behavior of BGA solder joints microstructures was studied as a function of Ni doping in SAC solder. Three kinds of solder compositions were selected including Sn3.0Ag0.5Cu, Sn1.0Ag0.5Cu and Sn1.0Ag0.5Cu0.02Ni to value the influence the effect of Ni doping, OSP and Au/Ni pad was employed on the PCB side. Emphasis was placed on studying the effect of low level doping with Ni on the joint microstructure and subsequent reliability. Both solder composition and PCB surface finish had a notable effect on the interfacial microstructure, the Ni addition can give rise to needle like NiCuSn IMC formation and reduce the grain size locally at solder/NiAu pad interface after one time reflow according to top-view interface analysis, and had no obvious effect on the IMC evolution of solder/OSP pad, the phenomena was investigated from the perspective of metallurgy. Bending and drop tests were conducted to evaluate the effect of solder composition and pad finish on the joint reliability. It was found that the decrease of Ag concentration and Ni addition in SAC solder could significantly improve the drop test performance when NiAu pad was used. In bending test, OSP pad show better performance than Au/Ni pad. The correlation between joint microstructure and joint reliability was discussed in detail. The work can give some directions on the solder alloy design and choice of pad finish in electronic packaging.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"24 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84773175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Design and implementation of LED daylight lamp lighting system LED日光灯照明系统的设计与实现
R. Guan, Dalei Tian, Xing Wang
{"title":"Design and implementation of LED daylight lamp lighting system","authors":"R. Guan, Dalei Tian, Xing Wang","doi":"10.1109/ICEPT.2008.4606997","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4606997","url":null,"abstract":"LEDs have becoming the most suitable candidate replacing traditional fluorescent lamps because of its energy-efficient, the introduction of high brightness LEDs with white light and monochromatic colors have led to a movement towards general illumination. This revolutionizes the optoelectronics market, enabling engineers to use LEDs for general lighting applications as well as medical, indoor lighting and automotive solutions. So variable LED array modules were developed, they are making great strides in terms of lumen performance and reliability, however the barrier to widespread use in general illumination still remains the cost or luminous efficiency, special requirements concerning optical properties and optomechanical layout have to be met. In order to meet the requirements of indoor illumination, a LED daylight lamp model was designed, it can replace traditional fluorescent lamp without insteading additional power supply establishment. The optical properties of the model were simulated using optical analysis software, its luminous efficiency is about 41 lm/W, the illuminance is about 50 lux when the distance is 1.5 m between the center of the model and measured spot, With the theoretically-optimized design of the LED model, experiments based on the results of the optimal simulation in the laboratory were conducted to verify the performance of the proposed LED model, it reaches a power factor of about 0.8 at 11 W. Results of the simulation are very similar with the measured values, it was testified that simulative method is one of the effective tools for LED lighting optical design.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"51 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78595664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Layout optimization and modeling of an ESD-protection n-MOSFET in 0.13um silicide CMOS technology 0.13um硅化CMOS技术中esd保护n-MOSFET的布局优化和建模
Jia Yuxi, Li Jiao, Ran Feng, Dian Yang
{"title":"Layout optimization and modeling of an ESD-protection n-MOSFET in 0.13um silicide CMOS technology","authors":"Jia Yuxi, Li Jiao, Ran Feng, Dian Yang","doi":"10.1109/ICEPT.2008.4607003","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607003","url":null,"abstract":"In this paper, a lot of CMOS devices with different device dimensions, spacings, and clearances have been drawn and fabricated to find the optimized layout rules for electrostatic discharge (ESD) protection in 0.13 um Silicide CMOS Technology. The dependences of layout parameters on ESD protection ability of GGNMOS are investigated by using the TLP (transmission line pulsing) measurement technique. A DC model for modeling ESD NMOS snapback characteristics is also presented in this paper.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"39 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87272517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Shear fracture behavior of Sn3.0Ag0.5Cu solder joints on Cu pads with different solder volumes 不同焊料体积Cu焊盘上Sn3.0Ag0.5Cu焊点剪切断裂行为
Yanhong Tian, Chunqing Wang, Shihua Yang, P. Lin, Le Liang
{"title":"Shear fracture behavior of Sn3.0Ag0.5Cu solder joints on Cu pads with different solder volumes","authors":"Yanhong Tian, Chunqing Wang, Shihua Yang, P. Lin, Le Liang","doi":"10.1109/ICEPT.2008.4607076","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607076","url":null,"abstract":"To meet the urgent demands of future electronic packages, the solder joints have to become increasingly miniaturized. Compared to the large solder joints, mechanics behavior for the samll solder joints is very different, resulting in a series of reliability issues. Therefore, it is very important to understand the mechanics behavior of the small solder joints. In this paper, the shear test of the as-reflowed and aged Sn-3.0Ag-0.5Cu solder joints on Cu pads with the diameters of 200 mum to 600 mum were conducted, and fracture behavior was observed using SEM. The results show that shear strength of the solder joint increases with the decreasing of the solder joints volumes. For the large volume solder joints, the fracture occurs close to the interface, and the solder joint shows strong brittleness. Whereas, for the small solder joints, the fracture occurs within the bulk solder, and the solder joint shows ductile property. The Ag3Sn and Cu6Sn5 intermetallic compounds (IMCs) at the interface region have a prominent effect on the shear property and the propagation of the fracture.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"30 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90801915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A mixed- signal physical design and its verification 一种混合信号物理设计及其验证
Hu Yue-li, Yan Ke
{"title":"A mixed- signal physical design and its verification","authors":"Hu Yue-li, Yan Ke","doi":"10.1109/ICEPT.2008.4607009","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607009","url":null,"abstract":"More and more analog and mixed-signal (AMS) blocks are integrated into SoC (system-on-chip) platform due to intense market competition. A mixed signal /mixed power SoC design, using Synopsys Libraries, based on Chartered 0.35 um Salicide 2P4M CMOS mixed signal process is introduced in this paper. The method of supply the core with different powers, isolated the digital part and the analog part and splitting the padring is also proposed. The physical layout design and its verification are implemented using Astro and Calibre.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"11 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79501275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strain-rate and impact velocity effects on joint adhesion strength 应变速率和冲击速度对接头粘结强度的影响
Chang-Lin Yeh, Y. Lai
{"title":"Strain-rate and impact velocity effects on joint adhesion strength","authors":"Chang-Lin Yeh, Y. Lai","doi":"10.1109/ICEPT.2008.4607139","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607139","url":null,"abstract":"In this paper, numerical studies are carried out on high-speed cold ball pull test by using explicit transient finite element simulations to predict transient response of package-level solder ball subjected to pull loads. The material constitutions of solder alloys are obtained from quasi-static tensile test and Hopkinsonpsilas bar test. Erosion technique is adopted for simulations of bulk solder fracturing, and interfacial element for intermetalic compound (IMC) fracturing. Parameter studies on pull velocity effect as well as strain-rate effect are also carried out. Transition points of pull velocity between bulk solder fracturing mode and IMC fracturing mode are identified therefore. From simulation results, transform relationship between pull forces to joint adhesion strengths of solder joints can be set up.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"9 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85510147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Study of plasticity damage mechanics constitutive model for SnAgCu solder joint SnAgCu焊点塑性损伤力学本构模型研究
Xiaoyan Li, Yongchang Yan, Na Liu
{"title":"Study of plasticity damage mechanics constitutive model for SnAgCu solder joint","authors":"Xiaoyan Li, Yongchang Yan, Na Liu","doi":"10.1109/ICEPT.2008.4607158","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607158","url":null,"abstract":"A thermodynamics-based damage mechanics rate dependent constitutive model is used to simulate experiments conducted on thin layer eutectic SnAgCu(SAC) solder joints. The non-damage constitutive is measured by bulk tensile test. The relationship between true stress and strain is sigma=85.26epsiv0.3536. Damage evolution equation is proposed based Lemaitre ductile damage theory and the constant in the equation is measured by unloading elastic modulus method. The damage evolution equation is D=1.0689epsivP-0.0008. Simulation (using software Ansys 9.0) of shear test of solder joint between Cu sticks employing damage mechanics rate independent constitutive is uniform to practicable test.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"56 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90326648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A new process to fabricate cavities in Pyrex7740 glass for high density packaging of micro-system 提出了一种在Pyrex7740玻璃中制备微系统高密度封装空腔的新工艺
Junwen Liu, Qing‐An Huang, J. Shang, Jing Song, Jie-ying Tang
{"title":"A new process to fabricate cavities in Pyrex7740 glass for high density packaging of micro-system","authors":"Junwen Liu, Qing‐An Huang, J. Shang, Jing Song, Jie-ying Tang","doi":"10.1109/ICEPT.2008.4606952","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4606952","url":null,"abstract":"In the domain of manufacturing and packaging of micro-system, the Pyrex7740 glass is a widely-used material since its coefficient of thermal expansion is similar to that of silicon, and its good optical performance for biosensors and optical sensors. But the use of Pyrex7740 glass is limited for its isotropic etching characteristic of tradition micro-machining. In this paper, we present a new process to fabricate deep grooves in Pyrex7740 glass. The process is based on the anodic bonding, and it uses the Si substrate as the mold for forming the shape of the cavity. Finally the cavities were formed by the atmospheric pressure after the special heat treatment. The Pyrex7740 glass with cavities could be used for high density packaging of micro-system by anodic bonding or adhesive bonding. The approach of fabricating deep cavities in Pyrex7740 glass is a key technology, which has seldom studied before. We have experimentally verified the feasibility of this new process. First of all, we fabricated the array of desired shape of cavities on silicon substrate by wet etching or dry etching. It is much easier to get the precise shape on the silicon substrate by micro machining than in Pyrex7740 glass. In our experiment, we had chosen several different side length of the square as a pattern. Then we bonded the Pyrex7740 glass and the silicon substrate together under the vacuum environment by anodic bonding. After that twice heat treatments were taken to the bonding wafer. One was to form the Pyrex7740 glass into desired shape by the silicon mold with the temperature up to the softening point. Another was to release thermal stress of the anodic bonding and the first heat treatment. The placement of the wafer during the heat treatment must be taken attention to. Finally, the bonding wafer with cavities was finished for the high density packaging of micro-system.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83848650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Vibration and buckling of a carbon nanotube inserted with a carbon chain 插入碳链的碳纳米管的振动和屈曲
Zhili Hu, X. Guo, J. Liu
{"title":"Vibration and buckling of a carbon nanotube inserted with a carbon chain","authors":"Zhili Hu, X. Guo, J. Liu","doi":"10.1109/ICEPT.2008.4607046","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607046","url":null,"abstract":"An elastic string-elastic shell model is developed to study vibration behaviors of a carbon nanowire. The present model predicts that non-coaxial vibration between the C-chain and the innermost tube does not occur due to negligible bending rigidity of the C-chain. In addition, it is found that the C-chain has most significant effect on the lowest frequency associated with radial vibration mode for circumferential wave-number 2 (n=2). In particular, the effect of the C-chain on axisymmetric radial breathing frequencies (n=0) predicted by the present model is found to be in reasonable agreement with known experimental and modeling results available in the literature.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"102 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76770194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new method for the investigation of strip warpage of MAP-QFN 一种研究MAP-QFN带材翘曲的新方法
Guohua Gao, Honghui Wang, Guoji Yang, Haiqing Zhu
{"title":"A new method for the investigation of strip warpage of MAP-QFN","authors":"Guohua Gao, Honghui Wang, Guoji Yang, Haiqing Zhu","doi":"10.1109/ICEPT.2008.4606970","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4606970","url":null,"abstract":"Electronic package plays an important part in the development of IC industry. As we all known, strip warpage is a critical issue for the MAP-QFN manufacturing, results from the package structure, the thermal mismatch of materials and the manufacturing process. In this paper, a new finite element model was used to predict the warpage of one MAP-QFN block. And in this model, the temperature-dependent parameters of materials were characterized by DMA and DSC measurements, and the boundary condition was set up to be close to the real deforming situation. Furthermore, by the geometric triangle principle, the calculated warpage was also verified with the experiment measurement data. Finally we accomplished the optimization of related package parameters, and decreased the warpage of MAP-QFN by applying the dead weight on the strip block in the post mould curing process.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"5 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85240034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信