2012 38th IEEE Photovoltaic Specialists Conference最新文献_第10页

Boron diffused emitter etch back and passivation 硼扩散射极蚀刻回和钝化

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317789

Xiaoqiang Li, Longzhong Tao, Zhengyue Xia, Zhuojian Yang, Jingbing Dong, Wentao Song, Bin Zhang, R. Sidhu, G. Xing

引用次数: 4

Automated process metrology in solar cell manufacturing 太阳能电池制造中的自动化过程计量

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317663

V. Velidandla, B. Garland, F. Cheung

{"title":"Automated process metrology in solar cell manufacturing","authors":"V. Velidandla, B. Garland, F. Cheung","doi":"10.1109/PVSC.2012.6317663","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317663","url":null,"abstract":"Optimizing a solar cell manufacturing line must take into account a variety of issues. Wafers used for solar cells are typically thinner than those used in semiconductor IC manufacturing. This makes the solar cell wafers susceptible to surface and edge defects such as deep scratches and cracks. The wafer slicing operation can induce thickness non-uniformity as well as surface roughness variation. Wafer texturing (typically via etching) must result in an optimal pyramid height in the case of monocrystalline wafers and an optical grain size in the case of polycrystalline wafers. Silicon Nitride grown on the wafer can induce stress and eventual breakage of the wafer. An uneven nitride film can cause a drop in the overall efficiency of the wafer. The metal contact lines account for a significant cost in the production of a solar cell wafer. The process engineer must pay attention to the contact line height and width while minimizing the total amount of metal used. Based on all these requirements, an optical profiler, the Zeta-200, was developed to provide rapid and meaningful feedback to the process line. In this paper we present results from various process points in solar cell manufacturing, such as bare wafer roughness, silicon nitride film thickness and contact line dimensions.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"120 1","pages":"000489-000495"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73542501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Arc-fault detector algorithm evaluation method utilizing prerecorded arcing signatures 利用预录电弧特征的电弧故障检测器算法评估方法

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317856

J. Johnson, J. Kang

引用次数: 41

Investigation of defects in N+-CDS/P-CdTe solar cells N+-CDS/P-CdTe太阳能电池缺陷的研究

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317837

P. kharangarh, D. Misra, G. Georgiou, A. Delahoy, Z. Cheng, G. Liu, H. Opyrchal, T. Gessert, K. Chin

引用次数: 0

Reverse stress metastability of shunt current in CIGS solar cells CIGS太阳能电池中并联电流的反向应力亚稳态

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317740

S. Dongaonkar, E. Sheets, R. Agrawal, M. Alam

引用次数: 8

ZnSnN2: A new earth-abundant element semiconductor for solar cells ZnSnN2:一种新的地球丰度元素太阳能电池半导体

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6318108

N. Feldberg, B. Keen, J. Aldous, D. Scanlon, P. Stampe, R. Kennedy, R. Reeves, T. Veal, S. M. Durbin

引用次数: 26

Modeling the optical and electrical response of nanostructured III–V solar cells 纳米结构III-V型太阳能电池的光学和电学响应建模

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6318211

K. Driscoll, S. Hubbard

{"title":"Modeling the optical and electrical response of nanostructured III–V solar cells","authors":"K. Driscoll, S. Hubbard","doi":"10.1109/PVSC.2012.6318211","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6318211","url":null,"abstract":"Concentrator Photovoltaics (CPV) have emerged as a potential alternative energy source due to a favorable balance between cost and efficiency. In contrast to traditional flat panel systems, CPVs result in cheaper fabrication costs since a bulk of the pricey crystalline solar cell is replaced with less expensive light collection and concentrator materials. However, in order to remain competitive with other energy technologies, CPV systems require core solar cells with both high efficiencies and low temperature coefficients. To address the previous need, incorporating nanostructures, such as quantum wells (QW) and quantum dots (QD), into III-V solar cells has been proposed as a potential route towards achieving efficiencies well exceeding 50% under concentration. Hence, vital to the design process of this particular class of solar cells is the ability to accurately calculate nanostructure properties critical to the operation of CPV devices. Here, we have developed a modeling routine using the physics based software Crosslight to systematically study how quantum effects influence the performance of photovoltaics. In particular, this methodology can be applied to study how nanoscale variables, including size, shape and material compositions, can be used to tailor the electrical and optical properties at the device level. Finally, macro-level engineering of the nanostructures, such as the number of stacked layers as well as the position of these structures within the device, is explored in optimizing the overall device response.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"7 1","pages":"002985-002989"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75169838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Growth and characterization of Cd1−xMgxTe thin films for possible application in high-efficiency solar cells Cd1−xMgxTe薄膜在高效太阳能电池中应用的生长和表征

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317591

P. Kobyakov, R. Geisthardt, T. Cote, W. Sampath

引用次数: 5

Excellent low temperature passivation scheme with reduced optical absorption for back amorphous-crystalline silicon heterojunction (BACH) photovoltaic device 后非晶硅异质结(BACH)光伏器件优异的低温钝化方案，降低了光吸收

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317777

Z. R. Chowdhury, D. Stepanov, D. Yeghikyan, N. Kherani

{"title":"Excellent low temperature passivation scheme with reduced optical absorption for back amorphous-crystalline silicon heterojunction (BACH) photovoltaic device","authors":"Z. R. Chowdhury, D. Stepanov, D. Yeghikyan, N. Kherani","doi":"10.1109/PVSC.2012.6317777","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317777","url":null,"abstract":"Low temperature processing of silicon photovoltaic (PV) solar cells with excellent passivation quality enables the effective use of ultra-thin wafers for solar cell manufacturing, thus paving the way for high-efficiency low-cost silicon photovoltaics. This article presents Back Amorphous-Crystalline Silicon Heterojunction (BACH) cell performance using low temperature (<;= 400°C) facile native oxide-PECVD silicon nitride (SiNx) dual layer passivation scheme. The cell performance is also compared with the BACH cells fabricated using intrinsic hydrogenated amorphous silicon (i-aSi:H) and PECVD SiNx layer passivation. Reduced optical absorption in the native oxide-SiNx passivation layer resulted in a higher short-circuit current, JSC, compared to the i-aSi:H-SiNx passivated cells. The fill-factor also improved for the native oxide-SiNx passivated cells owing to the improved transport properties. The i-aSi:H-SiNx passivated cells exhibited optimum cell performance of 10.9% efficiency with VOC of 598.7 mV, JSC of 34.3 mA/cm2 and fill-factor of 0.531. In contrast, a maximum cell efficiency of 16% is obtained for native oxide-SiNx passivated cells with VOC of 651 mV, JSC of 35.4 mA/cm2 and fill-factor of 0.694 for a 1 cm2 untextured cell (all measurements having been performed under AM 1.5 global spectrum illumination). The above untextured cell performance is a record efficiency for a back amorphous-crystalline silicon heterojunction PV device synthesized using all low temperature processes, exceeding the previously reported highest cell efficiency of ~15%.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"7 1","pages":"001026-001028"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75228139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Spatial characterization techniques for dye-sensitized solar cells 染料敏化太阳能电池的空间表征技术

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317882

M. Bokalič, U. Opara Krašovec, M. Hočevar, M. Topič

引用次数: 2