2012 38th IEEE Photovoltaic Specialists Conference最新文献_第9页

Over 8% efficiency Cu2ZnSnS4 submodules with ultra-thin absorber 效率超过8%的Cu2ZnSnS4子模块，超薄吸收器

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6318214

H. Sugimoto, H. Hiroi, N. Sakai, S. Muraoka, T. Katou

{"title":"Over 8% efficiency Cu2ZnSnS4 submodules with ultra-thin absorber","authors":"H. Sugimoto, H. Hiroi, N. Sakai, S. Muraoka, T. Katou","doi":"10.1109/PVSC.2012.6318214","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6318214","url":null,"abstract":"An efficiency of 8.6% on Cu2ZnSnS4 (CZTS) submodule is achieved by revising absorber formation and optimizing buffer layer thickness with the improved absorber. The CZTS submodule is fabricated by following process. Mo back electrode and metal precursor are deposited by vacuum-based processes. The CZTS absorber layer is formed through high-temperature annealing with sulfur containing gas. CdS buffer layer and ZnO window layer are then deposited by chemical bath deposition and metal-organic chemical vapor deposition, respectively. In this paper, we focus on the CZTS absorber uniformity and its thickness. Buffer thickness is also optimized. At first, performance of submodules with void-rich absorber and void-free absorber is investigated. Then, the impact of absorber thickness is investigated. We observe that thinner absorbers contribute to higher open circuit voltage whereas void-free absorbers contribute to higher fill factor. Over 8% submodule efficiency is achieved with void-free ultra-thin CZTS absorber layer with only 600 nm in thickness. Electron beam induced current (EBIC) mapping is performed to map out the distribution of current collection. The EBIC result clearly shows that the void-free and ultra-thin absorber has uniform and wide EBIC distribution. In addition, re-optimization of buffer layer thickness for the void-free and ultra-thin absorber further boosts the performance. We find that thinner CdS which lead to less absorption loss at short wavelength region works well with the void-free ultra-thin absorber. Further optimization will contribute to the development of lower cost and higher productivity CZTS fabrication process.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"28 1","pages":"002997-003000"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83664350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 26

Performance of luminescence down shifting for CdTe solar cells as a function of the incident solar spectrum CdTe太阳能电池发光降移性能随入射太阳光谱的变化

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6318103

D. Alonso-Álvarez, D. Ross, K. McIntosh, B. Richards

{"title":"Performance of luminescence down shifting for CdTe solar cells as a function of the incident solar spectrum","authors":"D. Alonso-Álvarez, D. Ross, K. McIntosh, B. Richards","doi":"10.1109/PVSC.2012.6318103","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6318103","url":null,"abstract":"In this work we address the performance of luminescence down shifting (LDS) layers in combination with cadmium sulfide/cadmium telluride (CdS/CdTe) solar cells as a function of the solar spectrum irradiance and power distribution, as would be the case in a real outdoor situation. To this purpose we have simulated the module efficiency when a CdS/CdTe mini-module is illuminated with a solar spectrum characteristic of different hours of the day and for five distinct days. Our results indicate that the LDS layer improves the conversion efficiency of the module in all scenarios (between 6 and 10%), where the improvement is most prominent at dawn and dusk (more than 20% on cloudy/summer days). The reason for this variation lies in the power distribution of the spectra, having a greater contribution of short-wavelength light in the morning or late in the afternoon. Under such blue-rich spectra the LDS layers operate very efficiently. Furthermore, we find that the relative efficiency improvement induced by an LDS layer has a roughly linear dependence with the average photon energy of the solar spectrum.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"37 1","pages":"002504-002508"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88457699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Theoretical analysis for intermediate band and tandem hybrid solar cell materials 中间波段和串联混合太阳能电池材料的理论分析

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317570

Jongwon Lee, S. Dahal, C. Honsberg

{"title":"Theoretical analysis for intermediate band and tandem hybrid solar cell materials","authors":"Jongwon Lee, S. Dahal, C. Honsberg","doi":"10.1109/PVSC.2012.6317570","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317570","url":null,"abstract":"The efficiency limit of an intermediate band (IB) solar cell can be increased by a “tandem” configuration of multiple intermediate band devices. Thermodynamic models show that the efficiency of a two-stack tandem of IB devices achieves the efficiency of a six junction series connected solar cell. The efficiency of an IB in conjunction with a single or double stack tandem has similar efficiency advantages. Further, analysis of the materials which can be used to implement IB solar cells in a tandem configuration shows advantages relating to the ability to implement IB materials with quantum wells or quantum dots. For a single IB solar cell, a key difficulty is identifying materials for the barrier and the quantum well which have a small valence band offset and large conduction band offset (or the reverse). The use of an IB solar cell as the bottom solar cell of a tandem allows a larger range of materials with suitable barrier band gaps and a smaller ideal conduction band offset. A further theoretical advantage of such a structure is that it avoids the extremely low open circuit voltages achieved from pn junctions in low bandgap materials; for example, the thermodynamic optimum for a 6 junction tandem solar cell has its lowest bandgap below 0.4 eV. We present a thermodynamic model for IB hybrid tandem configurations which does not assume spectral selectivity among the different solar cells and predicts that a barrier/quantum dot structure can have an efficiency as high as 60 to 70 percent at 1000X blackbody radiation.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"51 1","pages":"000068-000072"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90972231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Mo effect on one-step sputtering chalcopyrite CIGS thin films 对一步溅射黄铜矿CIGS薄膜无影响

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317989

Tzu‐Ying Lin, Chia-Hsiang Chen, C. Lai

引用次数: 2

High efficiency screen printed low-medium concentrator silicon solar cells with direct printed 50µm wide fingers 高效丝网印刷中低聚光硅太阳能电池，直接印刷50µm宽手指

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317754

Chia-Wei Chen, Xu dong Chen, K. Church, Haixin Yang, K. Tate, I. Cooper, A. Rohatgi

{"title":"High efficiency screen printed low-medium concentrator silicon solar cells with direct printed 50µm wide fingers","authors":"Chia-Wei Chen, Xu dong Chen, K. Church, Haixin Yang, K. Tate, I. Cooper, A. Rohatgi","doi":"10.1109/PVSC.2012.6317754","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317754","url":null,"abstract":"Screen printed low to medium concentrator silicon solar cells have potential to drive down the cost of PV since it replaces expensive semiconductor material by less expensive optics while maintaining high efficiency. However, the conventional screen-printed finger width is generally ≥100μm which limits the efficiency under higher concentration. In this paper, we report on the application of 50μm wide fingers fabricated by nScrypt non-contact direct printing technology to resolve this problem Two approaches were used to evaluate the merit of fine line extrusion printed fingers relative to normal screen-printed fingers. First approach involves keeping the metal coverage the same by increasing the number of lines, from 50 to 100, which lowers the series-resistance (Rs) and increases the FF. Second strategy involves keeping the Rs same by decreasing the number of lines, from 100 to 69, or reducing metal coverage which leads to higher Jsc. In this study, conventional screen-printed concentrator cells gave a peak efficiency of 19.2% at ~7 suns and 18.5% at 20 suns. The first strategy raised the peak efficiency to 19.7-20.0% in the range of 5 to 20 suns. The second approach to reducing metal coverage which keeping the same Rs raised the peak efficiency to 20.3% at ~7 suns which decreased gradually to 19.2% at 20 suns. Thus the use of 50μm wide lines can give 0.5 to 1.3% absolute efficiency enhancement in the range of 1-20 suns. These are among the most efficient metal paste printed low to medium concentrator solar silicon cells.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"30 1","pages":"000928-000931"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89908817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Characterization of InGaP heterojunction emitter quantum dot solar cells InGaP异质结发射极量子点太阳能电池的表征

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6318249

Z. Bittner, D. Forbes, C. Bailey, S. Polly, M. Slocum, C. Kerestes, S. Hubbard

引用次数: 3

A-Si:H/c-Si nanocomposite material for solar cells fabricated from PECVD PECVD制备太阳能电池用A-Si:H/c-Si纳米复合材料

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317826

M. Young, M. Benamara, H. Abu-Safe, Shui-Qing Yu, H. Naseem

引用次数: 1

Temperature and reverse voltage across a partially shaded Si PV cell under hot spot test condition 在热点测试条件下，部分遮光硅光伏电池的温度和反向电压

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317849

Qi Zhang, Qun Li

{"title":"Temperature and reverse voltage across a partially shaded Si PV cell under hot spot test condition","authors":"Qi Zhang, Qun Li","doi":"10.1109/PVSC.2012.6317849","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317849","url":null,"abstract":"Whether a crystalline Si PV cell in a module would fail in hotspot endurance test under partial shading condition is a practical question to many cell and module manufacturers. Answers to this question are associated with the reverse bias and elevated temperature across a partially shaded cell in a string of a module that is under illumination. This study reveals the reverse bias and temperature. It is found that the temperature has almost a linear relationship with the string length, and the reverse voltage is related to both cell Vpm and string length. The maximum reverse voltage and temperature under given string length and cell Vpm are summarized, which can serve as a pair of criteria to simulate the hot spot test condition to examine individual cell, study its hotspot properties. The elevated temperature can easily reach 130°C, when tested in a 24 cell string that is under short circuit condition during the test. And, the temperature can reach 150°C in a 30 cell string, which may cause permanent damage in module in such a test. Thus, it is cautioned that substantial increase in string length from 24 cells is not a realistic practice.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"10 1","pages":"001344-001347"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89628526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 22

Optical design of selectively scattering nanostructures for angle sensitive semi-transparent photovoltaics 角敏感半透明光伏材料选择性散射纳米结构的光学设计

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317574

B. Roberts, M. Boyd, P. Ku

{"title":"Optical design of selectively scattering nanostructures for angle sensitive semi-transparent photovoltaics","authors":"B. Roberts, M. Boyd, P. Ku","doi":"10.1109/PVSC.2012.6317574","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317574","url":null,"abstract":"Semi-transparent photovoltiacs are of interest for improving integration of solar energy harvesting with architecture. However, the competing requirements of optical transparency and efficient absorption of the incident spectrum severely limit performance. To address this tradeoff, we propose an angle selective organic photovoltaic window structure, structured such that normally incident light is transmitted to maintain window-quality transparency, while direct sunlight at an elevated angle is targeted for absorption. The localized surface plasmon resonance properties of metal nanorods are employed for angle and spectrally dependant scattering. The optical interference patterns arising when light propagates through subwavelength planar dielectric stacks are engineered to optimize the optical mode created by the metal scatterers via an evolutionary algorithm. We numerically model the transmission and absorption performance of a thin semi-transparent organic photovoltiac film under angled solar illumination to evaluate the potential for the proposed design. An optimized selective structure can maintain 70% optical transparency at normal incidence while improving total absorbed power by a factor of 2.3 vs. a lone semi-transparent cell of comparable transparency.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"42 1","pages":"000087-000091"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90398834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-efficiency InAs/GaAs quantum dot solar cells by MOCVD MOCVD制备的高效InAs/GaAs量子点太阳能电池

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317971

K. Tanabe, D. Guimard, D. Bordel, R. Morihara, M. Nishioka, Y. Arakawa

引用次数: 3