Characterization of InGaP heterojunction emitter quantum dot solar cells

Z. Bittner, D. Forbes, C. Bailey, S. Polly, M. Slocum, C. Kerestes, S. Hubbard
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引用次数: 3

Abstract

Heterojunction emitter InAs/GaAs quantum dot solar cells (QDSC) with an In0.48Ga0.52P (InGaP) n-type emitter and p-type GaAs base were fabricated along with homojunction nip solar cells in order to enable sub-cell polarity compatibility of InAs/GaAs QDSCs with current state-of-the-art monolithic InGaP/GaAs/Ge triple junction solar cells for space applications and to investigate potential dark current suppression effects and electronic field enhancement effects on carrier collection in InAs/GaAs QDSC. Quantum dot solar cells with one-Sun AM0 open circuit voltages greater than 970 mV were fabricated as compared to a 1.020 V heterojunction emitter `control' sample. Preliminary testing showed a reduction in short circuit current density from homojunction to heterojunction GaAs solar cells, primarily from changes in reflection and uncollected absorption in the InGaP emitter.
InGaP异质结发射极量子点太阳能电池的表征
采用in0.48 ga0.52 (InGaP) n型发射极和p型GaAs基底的异质结发射极InAs/GaAs量子点太阳能电池(QDSC)与同质结箝位太阳能电池一起制备,以实现InAs/GaAs量子点太阳能电池与当前最先进的单片InGaP/GaAs/Ge三结太阳能电池的亚电池极性兼容性,并研究潜在的暗电流抑制效应和电场增强效应对InAs/GaAs载流子收集的影响QDSC。与1.020 V异质结发射极“控制”样品相比,制备了开路电压大于970 mV的量子点太阳能电池。初步测试表明,从同质结到异质结GaAs太阳能电池的短路电流密度降低,主要是由于InGaP发射极中反射和未收集吸收的变化。
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