P. kharangarh, D. Misra, G. Georgiou, A. Delahoy, Z. Cheng, G. Liu, H. Opyrchal, T. Gessert, K. Chin
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引用次数: 0
摘要
研究了两组样品(CdTe太阳能电池)在-1V下，300K-393K的温度范围内。我们讨论了应用于CdTe的Shockley-Read-Hall复合/生成(SRH R-G)和用于产生CdTe陷阱能级的假设。在ln (J0T-2) vs. 1000/T的Arrhenius图中，在一个样品中观察到含cu反接触的J-V表征活化能呈现出一个斜率，而在另一个样品中则呈现出两个不同的斜率。利用已发表的具有能级的物理陷阱鉴定，我们得出结论，一个样品没有空穴陷阱，而另一个电池显示出与Cu取代杂质和正间隙Cui2+对应的深能级。
Investigation of defects in N+-CDS/P-CdTe solar cells
Two sets of samples (CdTe solar cells) were investigated at -1V within a temperature range of 300K-393K. We discuss Shockley-Read-Hall recombination /generation (SRH R-G) as applied to CdTe and the assumptions used to yield trap energy levels in CdTe. Observed activation energies of the J-V characterization made with Cu-containing back contact in one sample shows one slope while in another sample shows two distinct slopes in Arrhenius plot of ln (J0T-2) vs. 1000/T. Using published identification of the physical trap with energy level, we conclude that one sample does not have hole traps while the other cell shows deep levels corresponding to substitutional impurities of Cu and positive interstitial Cui2+.
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