纳米结构III-V型太阳能电池的光学和电学响应建模

K. Driscoll, S. Hubbard
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引用次数: 5

摘要

聚光光伏(CPV)已成为一种潜在的替代能源,因为它在成本和效率之间取得了良好的平衡。与传统的平板系统相比,cpv的制造成本更低,因为大部分昂贵的晶体太阳能电池被更便宜的光收集和聚光材料所取代。然而,为了保持与其他能源技术的竞争力,CPV系统需要具有高效率和低温系数的核心太阳能电池。为了解决之前的需求,将纳米结构,如量子阱(QW)和量子点(QD)结合到III-V型太阳能电池中,被认为是实现浓度下效率超过50%的潜在途径。因此,这类太阳能电池的设计过程中至关重要的是精确计算纳米结构特性的能力,这对CPV器件的运行至关重要。在这里,我们利用基于物理的软件cros轻微开发了一个建模程序,系统地研究量子效应如何影响光伏电池的性能。特别是,这种方法可以应用于研究纳米尺度变量,包括尺寸、形状和材料成分,如何在器件水平上用于定制电学和光学特性。最后,探讨了纳米结构的宏观工程,如堆叠层数以及这些结构在器件内的位置,以优化器件的整体响应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling the optical and electrical response of nanostructured III–V solar cells
Concentrator Photovoltaics (CPV) have emerged as a potential alternative energy source due to a favorable balance between cost and efficiency. In contrast to traditional flat panel systems, CPVs result in cheaper fabrication costs since a bulk of the pricey crystalline solar cell is replaced with less expensive light collection and concentrator materials. However, in order to remain competitive with other energy technologies, CPV systems require core solar cells with both high efficiencies and low temperature coefficients. To address the previous need, incorporating nanostructures, such as quantum wells (QW) and quantum dots (QD), into III-V solar cells has been proposed as a potential route towards achieving efficiencies well exceeding 50% under concentration. Hence, vital to the design process of this particular class of solar cells is the ability to accurately calculate nanostructure properties critical to the operation of CPV devices. Here, we have developed a modeling routine using the physics based software Crosslight to systematically study how quantum effects influence the performance of photovoltaics. In particular, this methodology can be applied to study how nanoscale variables, including size, shape and material compositions, can be used to tailor the electrical and optical properties at the device level. Finally, macro-level engineering of the nanostructures, such as the number of stacked layers as well as the position of these structures within the device, is explored in optimizing the overall device response.
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