微纳电子与智能制造最新文献_第3页

Numerical Simulation of Capillary and Fluid Dynamic Forces on Tiny Chips in Fluidic Self-Assembly Process 流体自组装过程中微晶片毛细管力和流体动力的数值模拟

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1643995

A. Tay, Hua Li, Xiangyang Gao, J. Chen, V. Kripesh

{"title":"Numerical Simulation of Capillary and Fluid Dynamic Forces on Tiny Chips in Fluidic Self-Assembly Process","authors":"A. Tay, Hua Li, Xiangyang Gao, J. Chen, V. Kripesh","doi":"10.1109/ESIME.2006.1643995","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643995","url":null,"abstract":"Fluidic self-assembly processes have been recently demonstrated to be a feasible method of assembling tiny chips in a cost-effective manner. In order to successfully implement the fluidic self-assembly process, it is important to quantify the magnitudes of the restoring capillary force and torque between the chip and the binding site and to determine the fluid dynamic forces acting on the chip as fluid flows over the chip. This paper presents results of numerical simulations of these restoring capillary forces and torques, and discusses the effect of various parameters on them, such as lubricant volume, component orientation and contact angle. The results show that the restoring forces in both lift and shift directions decrease significantly with the volume of lubricant. Analysis of the sensitivity of the restoring torque to the contact angle between the lubricant and the self-assembled monolayer (SAM) in water is also carried out. It is observed that, at smaller contact angles, the maximum torque is insensitive to the contact angle between 0 to 40deg. It thus suggests that a lubricant with a contact angle less than 40 degrees can be used without loss of effectiveness. The equilibrium of the chip under the action of flow-induced and capillary forces has also been analysed","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"20 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86419429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Numerical Examination and Experimental Verification of Thermal Performance of Board-level QFP with Unattached Drop-in Heat Spreader 板级无附着式散热器QFP热性能的数值研究与实验验证

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1643950

Y. Lai, T. Wang, Chang-Chi Lee, Hsuan-Yu Chen

引用次数: 1

Modeling and Simulation of Ferrite and Varistor EMI Suppressors 铁氧体和压敏电阻电磁干扰抑制器的建模与仿真

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1644035

M. Damnjanović, G. Stojanović, L. Zivanov

引用次数: 0

Comparison Between Simulated and Experimental Thermal Resistances of Power Devices Using an Specific Test Chip 基于特定测试芯片的功率器件模拟与实验热阻比较

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1644034

X. Jordà, M. Vellvehí, F. Madrid, J. Gálvez, P. Godignon, J. Millán

引用次数: 5

Fatigue and Thermal Fatigue Damage Analysis of Thin Metal Films 金属薄膜的疲劳和热疲劳损伤分析

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1644037

Guangping Zhang, C. Volkert, R. Schwaiger, R. Mönig, Oliver Kraft

引用次数: 71

Analytical and Numerical Analysis of Drop Impact Behavior for a Portable Electronic Device 便携式电子设备跌落冲击特性的解析与数值分析

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1644050

Jiang Zhou, K. Sharan, S. Lahoti

引用次数: 9

Thermo-Mechanical Modeling of Plastic-Core Solder Balls in LTCC/BGA Assemblies LTCC/BGA组件中塑料芯焊料球的热力学建模

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1644003

J. Anttonen, T. Kangasvieri, O. Nousiainen, J. Putaala, J. Vahakangas

引用次数: 1

Electromechanical Model of a Multi-Layer Piezoelectric Cantilever 多层压电悬臂梁的机电模型

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1644024

J. Brufau-Penella, M. Puig-Vidal

引用次数: 3

Finite Element Modeling of Electrostatic MEMS Including the Impact of Fringing Field Effects on Forces 包含边缘场效应对力影响的静电MEMS有限元建模

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1643959

M. Boutaayamou, K. H. Nair, R. Sabariego, P. Dular

引用次数: 8

Virtual Design and Qualification of IC Backend Structures 集成电路后端结构的虚拟设计与鉴定

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1643962

R. van Silfhout, O. van der Sluis, W. V. van Driel, J. Janssen, G.Q. Zhang

{"title":"Virtual Design and Qualification of IC Backend Structures","authors":"R. van Silfhout, O. van der Sluis, W. V. van Driel, J. Janssen, G.Q. Zhang","doi":"10.1109/ESIME.2006.1643962","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643962","url":null,"abstract":"For Integrated Circuit (IC) wafer backend development, process developers have to design robust backend structures that guarantee both functionality and reliability during waferfab processes, packaging, qualification tests and lifetime. Figure 1 shows a simplified diagram for the design (and redesign) cycle forevelopment. Subsequently, package development IC development. Subsequently, package develop t . inherited runs a similar cycle. By using reliability modell relate it to the interaction of IC and package assembly, such as IC/compound delamination, we aim at integrating IC and packge prototyping in order to develop reliable IC packages faster. This paper presents parts of our research to approach thermo-mechanical IC reliability by virtually designing and quaifying IC backend structures in both IC processing, packaging and testing processes. By combining experimental and numerical results, targeted failure modes and mechanisms as well as their interactions are understood. It is found that delamination is the key trigger for passivation cracking and metal shift. Even more, the layout of interconnect metals in the backend of ICs has a major effect on under bond-pad wir delamination observed after wafer probing an wire ing. Reliable predictive modelling approaches enable IC package development towards a first-time-right practice.","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"47 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78370379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1