Comparison Between Simulated and Experimental Thermal Resistances of Power Devices Using an Specific Test Chip

X. Jordà, M. Vellvehí, F. Madrid, J. Gálvez, P. Godignon, J. Millán
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引用次数: 5

Abstract

Thermal simulation is nowadays the basic thermal management design tool to predict temperature distributions and power fluxes of complex assemblies. Nevertheless, the simulation results can be inaccurate due to the uncertainty of the values of the parameters involved in the modelisation, as it is the case of the dielectric layer of the IMS substrates. We propose a methodology for the in-situ measurement of the thermal conductivity of this dielectric layer. Two typical power assembly structures based on two types of substrates and a thermal assessment chip, have been simulated and their thermal resistance deduced. The corresponding experimental results have validated the simulations and, consequently, the thermal conductivity extraction method proposed
基于特定测试芯片的功率器件模拟与实验热阻比较
热模拟是目前预测复杂组件温度分布和功率通量的基本热管理设计工具。然而,由于建模中涉及的参数值的不确定性,模拟结果可能是不准确的,因为它是IMS基板的介电层的情况。我们提出了一种原位测量该介电层导热系数的方法。对基于两种衬底和热评估芯片的两种典型电源组件结构进行了仿真,并推导了其热阻。相应的实验结果验证了模拟结果,从而验证了所提出的热导率提取方法
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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