微纳电子与智能制造最新文献

{"title":"Parametric Finite Element Analysis for Reduced Order Modeling of MEMS","authors":"V. Kolchuzhin, J. Mehner, T. Gessner, W. Doetzel","doi":"10.1109/ESIME.2006.1644004","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644004","url":null,"abstract":"In this paper we describe a simulation methodology based on FEM to automatic generating reduced order models of coupled microelectro-mechanical systems (MEMS). In particular, the time consuming FE data sampling process should be replaced by a single finite element run. The idea of the new approach is to compute not only the governing system matrices but also high order partial derivatives with regard to design parameters by means of automatic differentiation. As result, Taylor vectors of the model response can be expanded in the vicinity of the initial position with regard to dimensional and physical parameters. The approach is demonstrated on example of a micromirror cell","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"62 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81422412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Shear Horizontal Surface Acoustic Wave Sensors Based on Polyaniline for Ammonia Gas Sensing","authors":"Chi-Yen Shen, Cheng-Liang Hsu, De-Lu Wang","doi":"10.1109/ESIME.2006.1643945","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643945","url":null,"abstract":"A shear horizontal surface acoustic wave (SH-SAW) sensor coated with polyaniline (PANI) was investigated in this study. The frequency shift of SH-SAW was measured for the response to ammonia in this study. The temperature effect was also discussed in order to find the suitable temperature of operation. The response of the SH-SAW sensor immediately responded the concentration of ammonia gas. Moreover, this sensor presented a sensitivity of 0.03 ppm/ppm at 23degC. The responses to ammonia decreased with decreasing temperature below 23degC","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"48 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87964833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reliability Issues in Cu/low-k Structures Regarding the Initiation of Stress-Voiding or Crack Failure","authors":"S. Orain, A. Fuchsmann, V. Fiori, X. Federspiel","doi":"10.1109/ESIME.2006.1643960","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643960","url":null,"abstract":"Continuous down scaling of the interconnect dimensions led to the introduction of copper and low-k dielectric materials. The use of such materials is challenging in the field of mechanical reliability, such as stress-induced voiding in copper interconnects and cracking of low-k dielectrics. Up to now these two failure modes were investigated separately. However, recent experimental observations tend to demonstrate the possibility of a complex interaction of both failure modes, one overwhelming or enhancing the other. In this paper a comparison of the risk of void or crack occurrence is made by the mean of finite element modelling. Further, the interaction between these two failure modes (voiding and cracking) is also studied","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"93 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89086534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hybrid Constant Temperature Regulator","authors":"K. ezni ek Zden, V. Tvarozek, I. Szendivich, M. ezni ek","doi":"10.1109/ESIME.2006.1644021","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644021","url":null,"abstract":"A powerful temperature difference measuring relation method using the high resistance ratio-metric sensors which is improving the accuracy, because it can solve such problems as dependence of a sensor's sensitivity to such factors as power supply instability, ambient temperature, humidity, pressure, effects of self-heating, aging, etc. was presented in [ezni ek et al, 2001]. Many similar derivate relation ratio measuring and monitoring systems were developed for biosensor applications etc. presented in (Tvarozek et al., 2002), (Vavrinsky et al., 2003), and for micro-calorimetric applications (ezni ek and Szendiuch, 2005), (ezni ek et al., 2005) to time. The combination of these methods was studied for many applications in continual process constant temperature controlling. The process energy is balanced at defined constant temperature with the highest sensitivity and the lowest time-current delay using the special balance sensor consisted of electronic energy balance switching circuit with operational amplifier. The sensor heater contains of two asymmetric low resistance dividers in anti-parallel circuit wired to output of power linear operational amplifier: two of unequal resistors (Pt1 and Pt2) are temperature-dependent (Pt) and second couple of unequal resistors (R1 and R2) are temperature non-dependent (NiCr or AgPd). The sensor heater contains of four resistors ceramic substrate on realized, two of them (Pt1 and Pt2) are temperature-dependent (Pt) and second one (R1 and R2) are temperature non-dependent (NiCr or AgPd) resistors. The coefficient of asymmetry defined how resistance ratio K=Ptl/(Ptl+Pt2) is equal to R1/(R1+R2) and must be different of frac12. It means that the resistances of resistors Pt1 and Pt2 or R1 and R2 can't be the same. The temperature sensitivity VTCR of heater is defined by formula VTCR = -(2K-l)*TCR/4 and it is calibrate-able by trimming of coefficient K. Itself balance heater working temperature is defined by value of resistance R1 or R2 in relation to resistance of Pt1 or Pt2. The itself balance heater temperature is defined by equality R1=Pt1 or R2=Pt2 by relation Ty = (R1-Pt10)/TCR*Pt10, where the Pt10 is resistance of resistor Pt1 by temperature 0degC. This is first one of designed heater parameters. Second one is the current limit determined by the maximal heater output and the system power voltage by implication. Finally third one is heater temperature sensitivity defined hereinbefore","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"16 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85816011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"EM Modeling of RF MEMS","authors":"L. Vietzorreck","doi":"10.1109/ESIME.2006.1644057","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644057","url":null,"abstract":"The modeling of RF MEMS circuits and components is an important issue, as by proper modeling and optimization of a structure prior to the technological realization the time for a production cycle can be reduced. RF MEMS are in general three-dimensional structured devices, which can be analyzed with all common design and simulation tools. On the other hand the geometrical dimensions, varying from a fraction of a micron to several millimeters, create aspect ratios that make the accurate full wave characterization of the device very challenging. Moreover, for small dimensions material parameters like conductor loss, roughness etc. Play an important role and have to be considered in a careful analysis. In this contribution a short overview over existing modeling tools, suitable for the analysis of RF MEMS will be given. Modeling strategies and critical aspects of the simulations will be discussed","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"61 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90499576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evolution of Semiconductor Packaging. Present and Future","authors":"C. Cognetti","doi":"10.1109/ESIME.2006.1644056","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644056","url":null,"abstract":"Summary form only given. Evolution of semiconductor packaging has taken impressive acceleration, under the pressure of new applications, combining very high volumes, innovation and cost effectiveness. Conventional single chip package completed its cycle, by reaching a die-to-package ratio close to one. And also wire bonding technology is getting close to its physical limits, at about 25-30 micron bonding pad pitch. New 3D interconnection technologies, like system in package (SiP), package on package (PoP) and, package in package (PiP), offer the unique advantage of integrating heterogeneous functions in the three dimensions of the package, which can be in some extent competitive with chip-level integration (system on chip - SoC)","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"56 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76058493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"1 Gb stacked solution of multilevel NOR flash memory packaged in a LFBGA 8 mm by 10 mm by 1.4 mm of thickness","authors":"M. Dellutri, P. Pulici, D. Guarnaccia, P. Stoppino, G. Vanalli, T. Lessio, F. Vassallo, R. Di Stefano, G. Labriola, A. Tenerello, F. Lo Iacono, G. Campardo","doi":"10.1109/ESIME.2006.1643997","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643997","url":null,"abstract":"The evolution of electronic world is running toward more and more complex devices even looking for a reduction of the overall system dimensions. This improvement is particularly evident in the wireless applications where portable devices are becoming the key products. Many different applications have been inserted in the last years to satisfy all the increasing final user requirements, without affecting the final device dimensions. This important goal was possible due to many technical achievements in term of integration, the stacked package solutions being the most relevant among them. This assembly technology allows putting more dice one upon the other in a unique package so exploiting its z-dimension. This work aims to describe a multi-memory stacked device of 1 Gb size of the NOR flash memory composed by a four 256Mb dice stacked structure. This solution allows increasing the memory size maintaining the electrical performances of the multilevel NOR flash i.e. speed class. The structure is composed by seven dice: four active and three dummy interposers to create the physical space for the wires bonding from die pads to package substrate (Titus et al., 2004). The package is a LFBGA (low fine pitch ball grid array) 8 mm by 10 mm by 1.4 mm with 88 balls (0.8 mm pitch). An embedded circuitry in the die implements the logic to allow the system to be managed as a monolithic 1 Gb. Moreover, a description of the electrical analysis is reported in order to highlight the electromagnetic interferences between the different dice and the signal integrity of the whole system. Some samples of the device have been assembled in a package without molding in order to make measurements even on the pad of the devices and other critical nodes internal into the package","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"12 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78547733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On the application of the BGK model to the simulation of fluid structure interaction in MEMS","authors":"C. Cereignani, A. Frangi, S. Lorenzani, A. Frezzotti","doi":"10.1109/ESIME.2006.1644007","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644007","url":null,"abstract":"A three-dimensional quasi-static Stokes model, with a correction based on the kinetic theory of rarefied gas, is used to evaluate the damping forces exerted by gas flows on the moving surfaces of micromechanical structures in a wide range of pressures. Numerical results arc compared with the experimental data collected on a silicon biaxial accelerometer in the continuum and transitional flow regimes","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"11 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74901076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Prediction of high cycle fatigue in aluminum bond wires: A physics of failure approach combining experiments and multi-physics simulations","authors":"J. Bielen, J.-J. Gommans, F. Theunis","doi":"10.1109/ESIME.2006.1644022","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644022","url":null,"abstract":"Aluminum wire bonds, as used in a ceramic air cavity package for LDMOS, will intrinsically be prone to mechanical fatigue due to temperature and power cycling causing the wires to expand and shrink in a cyclical way. Under certain pulsed application conditions, the required amount of current cycles the product must survive is so high that not just low cycle fatigue, caused by cyclic plastic deformation, but also high cycle fatigue becomes a concern. This paper describes how in-situ monitored power cycling experiments, using the Joule heating of the bond wires, were performed on dedicated test structures at different stress levels with wire loop shapes and test settings critical enough to find failures within reasonable test times. Wire bond settings were varied to create different amounts of initial damage as introduced by the plastic deformation of the heel and the wedge. Finite element method was employed to calculate the stress amplitude in the heel of the bond wire in the experiments as function of current, pulse time and loop shape. This required a multi-physics approach using coupled electro-thermal and sequentially coupled thermo-mechanical simulations. The amount of initial damage was also estimated, using 2D FE simulations, in order to quantitatively take into account the initial plastic strains. With the measured failure times (Nf) and calculated stress amplitude (S) the durability or S-N curves for different amounts of initial damage could be derived and fitted with the Basquin model. These fitted models were used to predict the expected lifetime for specified field conditions. Furthermore the models can be used to derive `design for reliability rules' for wire loop shapes that will survive a specified user profile","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"68 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81253513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On the Advantages of Using a Strong Coupling Variational Formulation to Model Electro-Mechanical Problem","authors":"V. Rochus, D. Rixen, J. Golinval","doi":"10.1109/ESIME.2006.1643965","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643965","url":null,"abstract":"This paper presents the advantages of a strong coupled formulation to model the electro-mechanical coupling appearing in MEMS. Usually the classical softwares use a staggered methodology iterating between two different codes to obtain the solution of the coupled problem. In this research a strong coupled formulation is proposed and a tangent stiffness matrix of the whole problem is computed. Using this matrix, nonlinear algorithms such as the Riks-Crisfield algorithm may be applied to solve the static nonlinear problem and determine accurately the static pull-in voltage. Moreover, the natural frequencies may be computed around each equilibrium positions. The dynamic behaviour of the structure may also be studied and two new parameters are defined: the dynamic pull-in voltage and the dynamic pull-in time. This strong coupled methodology deriving from variational principle may also be used for topology optimisation and extended finite elements","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"5 1","pages":"1-8"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84811654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}