微纳电子与智能制造最新文献_第9页

Difficulties on the estimation of the thermal structure function from noisy thermal impedance transients 基于噪声热阻抗瞬态估计热结构函数的困难

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1644029

M. Salleras, J. Palacín, G. Carles, S. Marco

引用次数: 7

Exact Modelling of Stress Fields In Bimaterial Beams Using Readily Available Mathematical Software 精确模拟应力场在双材料梁使用现成的数学软件

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1644036

C. Kinsella, T. Moore, J. Jarvis

{"title":"Exact Modelling of Stress Fields In Bimaterial Beams Using Readily Available Mathematical Software","authors":"C. Kinsella, T. Moore, J. Jarvis","doi":"10.1109/ESIME.2006.1644036","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644036","url":null,"abstract":"A little-used first principles solution was proposed by Hess in 1969 for the stress fields in a bimaterial elastic beam under any arbitrary self equilibrating free end loading. In this paper Hess's solution is implemented using Matlab to calculate axial and normal stresses at any required horizontal or vertical cross-section of the beam. The approach uses numerical methods to develop an eigenvalue solution for any given set of layer thicknesses and material properties. A novel finite element mesh design, originally presented in 1989 by Schiermeier and Szabo, is used to validate the results from the above analysis. The mesh (of p-elements) is strongly graded around singularities, ensuring their effects are isolated. More remote areas of the model, where stresses and gradients are low, are sparsely populated by elements. The rapid changes in interfacial peeling stress and interfacial shear stress close to the free edge are coped with quite effectively by this mesh design. The two methods are used to examine the stress fields in the bimaterial beam. Although both methods can be used to calculate stresses at any required horizontal or vertical cross-section in the beam, the first principles method has the advantage of not requiring FEA software. Instead Excel or Matlab can readily display a plot of the stress distribution in the selected cross section. The method can be applied to axial, shear and peeling (normal) stresses in bimaterial beams. The solution has applications in many varied areas of engineering, from thermal stresses in IC packages to the behaviour of armour plating under mechanical loads","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"15 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78574232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Numerical Identification of Geometric Parameters from Dynamic Measurement of Grinded Membranes on Wafer Level 圆片级磨膜动态测量几何参数的数值识别

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1644016

M. Ebert, R. Gerbach, J. Bagdahn, S. Michael, S. Hering

引用次数: 5

MVT corrections for the evaluation of damping in MEMS MEMS中阻尼评估的MVT校正

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1644006

C. Cercignani, A. Frangi, S. Lorenzani, B. Vigna

引用次数: 0

Multi-domain and mixed-signal simulation of System-on-Chip embedding MEMS 片上系统嵌入MEMS的多域和混合信号仿真

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1643956

S. Basrour, K. Matou, Y. Ammar, M. Marzencki, A. Zenati

{"title":"Multi-domain and mixed-signal simulation of System-on-Chip embedding MEMS","authors":"S. Basrour, K. Matou, Y. Ammar, M. Marzencki, A. Zenati","doi":"10.1109/ESIME.2006.1643956","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643956","url":null,"abstract":"The aim of this paper is to deal with a new approach for the modelling and the simulation of mixed-signal multi-domain microsystems (MSMD) in the MATLABreg/Simulinkreg environment. MSMD are systems mixing different domains such as analog and digital electronics, radio-frequency modules, micro-electro-mechanical systems (MEMS), micro-optical-electro-mechanical systems (MOEMS) and others on the same chip (system-on-chip: SoC) or in the same package (system-on-package: SoP). The heterogeneity of such systems can be seen at different abstraction levels. In fact this heterogeneity is mainly due to the multiphysic domains and also to the nature of the signals available on the chip. The creation of a virtual prototype of such microsystems is very useful because it allows to significantly shorten the design cycle and to reduce the design cost. Due to different domains, the mixed signals, the several non-linearities of the electrical components or MEMS devices and the interdependences of their subsystems, it is very complex to make a global simulation and optimization with traditional approaches and with the same simulator. Several modelling languages can be used, for example SPICE and VHDL-AMS, but one of the major disadvantages of these languages concerns the convergence of the simulation. MATLABreg/Simulinkreg is a powerful environment where several subsystems can be modelled with analytical equations, electrical circuits, etc. In this paper, we apply our approach to model and to simulate a self powered micro systems (SPMS) in this simulation environment. Several simulation results, made with different abstraction levels, have been compared and are in very good agreement. Moreover, we report in this paper cosimulation results obtained with Simulinkreg/SMASHtrade software. These results will prove the efficiency of our approach for the design of microsystems","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"64 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80004689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Assembly-Induced Stress and Its Effect on the Integrity of Assembly System in Drop Simulation 跌落仿真中装配诱导应力及其对装配系统完整性的影响

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1643977

W. Ren, Jianjun Wang

引用次数: 1

Thermo-Mechanical Analysis of the Packaging Process for Micro-Electronic Displays 微电子显示器封装工艺的热-力学分析

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1644051

Y. Lee, C. Bailey, Hua Lu, S. Riches, M. Bartholomew, N. Tebbit

引用次数: 2

Steady state and transient thermal characterization for flip chip interconnection on flexible substrate 柔性衬底上倒装芯片互连的稳态和瞬态热特性

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1644019

L. Chen, R. Lehtiniemi, B. Vandevelde, A. Arslan

{"title":"Steady state and transient thermal characterization for flip chip interconnection on flexible substrate","authors":"L. Chen, R. Lehtiniemi, B. Vandevelde, A. Arslan","doi":"10.1109/ESIME.2006.1644019","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644019","url":null,"abstract":"As flexible electronic applications gain more and more research interests, the thermal management issues related to these become more critical. This paper quantifies the thermal resistance of flip chip interconnection on flexible substrate by both simulation and experimental measurements. For the simulation, both finite element method (FEM) and computational fluid dynamics (CFD) are used. Measurements are employed in both steady state and transient state conditions. Results reveal that thinner flex substrate is a poor thermal conductor and one of the key factors in improving thermal performance is the amount of copper in the substrate, as this acts as a heat spreader to remove heat over a larger area. The module without backside metallization has a significant amount of heat conduction through the copper tracks, while for the module having backside metallization, the main portion of heat is spread over the backside metallization. Thermal resistance is also boundary-dependent: it is smaller in cold-plate condition, while 5-15 times higher at natural convection condition. The backside copper metallization plays an important role under natural convection condition, while this influence is not pronounced under cold-plate conditions.","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"5 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85343331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Molecular Modeling of Analyte Adsorption on MEMS GC Stationary Phases 分析物在MEMS GC固定相上吸附的分子模拟

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1644059

N. Iwamoto, U. Bonne

引用次数: 3

Compact Modeling of Diode with VHDL-AMS Including Reverse Recovery 二极管的VHDL-AMS紧凑建模包括反向恢复

微纳电子与智能制造 Pub Date : 2006-04-24 DOI: 10.1109/ESIME.2006.1643952

L. Coyitangiye, R. Grisel

引用次数: 2