二极管的VHDL-AMS紧凑建模包括反向恢复

微纳电子与智能制造 Pub Date : 2006-04-24 DOI:10.1109/ESIME.2006.1643952

L. Coyitangiye, R. Grisel

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引用次数: 2

摘要

提出了一个模拟二极管反向恢复行为的VHDL-AMS模型。为了使VHDL-AMS对模拟设计界有用，必须提供高效的半导体器件模型。该模型基于电荷输运方程，并采用集总电荷建模技术对其进行了简化。该模型在advanced - ms模拟器上进行了验证，并与测量结果进行了比较

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Compact Modeling of Diode with VHDL-AMS Including Reverse Recovery

A diode VHDL-AMS model is presented which can simulate the diode reverse recovery behavior. For VHDL-AMS to be useful to the analog design community, efficient semiconductor device model must be available. The model is based on the charge transport equations and they are simplified using the lumped-charge modeling technique. The model is demonstrated on the Advance-MS simulator and compared to measurements

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来源期刊

微纳电子与智能制造

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发文量

145