Nano Futures最新文献_第3页

Reliable p-type organic permeable base transistors—the missing component for integrated circuits 可靠的p型有机渗透基极晶体管——集成电路中缺少的元件

IF 2.1 4区材料科学

Nano Futures Pub Date : 2023-05-15 DOI: 10.1088/2399-1984/acd59a

Juan Wang, A. Bonil, Jörn Vahland, H. Kleemann

{"title":"Reliable p-type organic permeable base transistors—the missing component for integrated circuits","authors":"Juan Wang, A. Bonil, Jörn Vahland, H. Kleemann","doi":"10.1088/2399-1984/acd59a","DOIUrl":"https://doi.org/10.1088/2399-1984/acd59a","url":null,"abstract":"Due to their nm-range channel length, vertical organic transistors are gaining scientific interest to overcome the frequency limitations of lateral organic transistor. Especially, vertical organic permeable base transistors (OPBTs) with a structure resembling a vacuum-tube-triode stand out due to their excellent electrical performance. Recently, n-type OPBTs have been demonstrated with excellent performance and great potential to be applied in high-frequency logic circuits, display driving circuits, and light-emitting devices. However, achieving adequate p-type OPBTs to catch up with the performance of n-type devices is still challenging. Here, we report on the peculiar finding that the extended exposure of p-type OPBTs to ambient air during the fabrication has a positive effect on the electrical performance and tremendously improves the yield of devices to 100% . Upon exposing the fresh device to air, oxygen diffuses into the semiconductor layer interacting with the base electrode, which facilitates the formation of pinholes in the base and creates an insulator layer around the base. Moreover, as oxygen acts as a p-dopants to the p-type semiconductors used in this work, the device performance is further improved, manifesting in an increased on-state current. However, as the exposure time increases, different p-type organic semiconductors show different behavior depending on their ionization potential. Comparing two semiconductor materials with a difference in their ionization potential of 0.4 eV, we show that long-term degradation could be effectively suppressed. Therefore, the positive effect of air exposure could be utilized to optimize p-type OPBTs, which offers a simple and universal way to construct high performance p-type OPBTs and possibly also complementary circuits.","PeriodicalId":54222,"journal":{"name":"Nano Futures","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2023-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"61167425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A silver nanoparticle (AgNP)-loaded Bi2Se3 topological insulator p-n heterojunction photodiode for a near-infrared (NIR) photodetector 一种用于近红外(NIR)光电探测器的负载银纳米粒子(AgNP) Bi2Se3拓扑绝缘体p-n异质结光电二极管

IF 2.1 4区材料科学

Nano Futures Pub Date : 2023-05-09 DOI: 10.1088/2399-1984/acd3ca

V. Elangovan, V. Vaiyapuri, Aysha Parveen R, A. Jayaram, Harish Santhanakrishnan, Navaneethan Mani

{"title":"A silver nanoparticle (AgNP)-loaded Bi2Se3 topological insulator p-n heterojunction photodiode for a near-infrared (NIR) photodetector","authors":"V. Elangovan, V. Vaiyapuri, Aysha Parveen R, A. Jayaram, Harish Santhanakrishnan, Navaneethan Mani","doi":"10.1088/2399-1984/acd3ca","DOIUrl":"https://doi.org/10.1088/2399-1984/acd3ca","url":null,"abstract":"Near-infrared (NIR) photons are expanding advanced applications in optoelectronics. However, while 2D materials like graphene offer an attractive route for NIR photodetection, the alternative for high-performance NIR detection is still evolving. Hence, solution-processed n-Bi2Se3 /p-Si-based 2D heterojunction photodiodes have been fabricated here and used for high-performance NIR detection. Further, we report high photoresponsivity of 248 mA W−1 at 1100 nm, high external quantum efficiency of 22, 23 and 28% for Ag-loaded (at 5, 7.5 and 10%) Bi2Se3 and good stability. The chemical states of Bi2Se3 and Ag are detected using the core-level spectra of x-ray photoelectron spectroscopy. Photoresponse I–V characteristics are investigated under both dark and illumination; the high photocurrent achieved for Ag-loaded Bi2Se3 and the increase in the forward photocurrent under both dark and bright conditions are reported. The temporal photoresponse curve confirms the good stability (photoswitching behavior) and reproducibility with a response time of 0.74 s and a decay time of 0.18 s. Therefore, these unique performance and device parameters of a manufactured photodiode strongly recommend as a potential heterojunction photodiode for an NIR photodetector.","PeriodicalId":54222,"journal":{"name":"Nano Futures","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2023-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42652324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

New nanocomposite membranes based on polybenzimidazole with improved fuel cell performance at high temperatures 基于聚苯并咪唑的新型纳米复合膜提高了燃料电池的高温性能

IF 2.1 4区材料科学

Nano Futures Pub Date : 2023-05-04 DOI: 10.1088/2399-1984/acd28a

Khadijeh Hooshyari, M. B. Karimi, Hossein Beydaghi, Huaneng Su, Alireza Salimi Ben

引用次数: 0

Biologically plausible information propagation in a complementary metal-oxide semiconductor integrate-and-fire artificial neuron circuit with memristive synapses 生物学上可信的信息传播在互补金属氧化物半导体集成和发射人工神经元电路与忆阻突触

IF 2.1 4区材料科学

Nano Futures Pub Date : 2023-04-21 DOI: 10.1088/2399-1984/accf53

Lorenzo Benatti, T. Zanotti, D. Gandolfi, J. Mapelli, F. Puglisi

{"title":"Biologically plausible information propagation in a complementary metal-oxide semiconductor integrate-and-fire artificial neuron circuit with memristive synapses","authors":"Lorenzo Benatti, T. Zanotti, D. Gandolfi, J. Mapelli, F. Puglisi","doi":"10.1088/2399-1984/accf53","DOIUrl":"https://doi.org/10.1088/2399-1984/accf53","url":null,"abstract":"Neuromorphic circuits based on spikes are currently envisioned as a viable option to achieve brain-like computation capabilities in specific electronic implementations while limiting power dissipation given their ability to mimic energy-efficient bioinspired mechanisms. While several network architectures have been developed to embed in hardware the bioinspired learning rules found in the biological brain, such as spike timing-dependent plasticity, it is still unclear if hardware spiking neural network architectures can handle and transfer information akin to biological networks. In this work, we investigate the analogies between an artificial neuron combining memristor synapses and rate-based learning rule with biological neuron response in terms of information propagation from a theoretical perspective. Bioinspired experiments have been reproduced by linking the biological probability of release with the artificial synapse conductance. Mutual information and surprise have been chosen as metrics to evidence how, for different values of synaptic weights, an artificial neuron allows to develop a reliable and biological resembling neural network in terms of information propagation and analysis.","PeriodicalId":54222,"journal":{"name":"Nano Futures","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2023-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49013274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In-situ monitoring of plasmon-induced nanoscale photocatalytic activity from Au-decorated TiO2 microflowers 等离子体诱导的au修饰TiO2微花纳米光催化活性的原位监测

IF 2.1 4区材料科学

Nano Futures Pub Date : 2023-04-21 DOI: 10.1088/2399-1984/accf54

S. Sahoo, Binaya Kumar Sahu, Shivam Shukla, Sanjeev Srivastava, P. Sahoo

{"title":"In-situ monitoring of plasmon-induced nanoscale photocatalytic activity from Au-decorated TiO2 microflowers","authors":"S. Sahoo, Binaya Kumar Sahu, Shivam Shukla, Sanjeev Srivastava, P. Sahoo","doi":"10.1088/2399-1984/accf54","DOIUrl":"https://doi.org/10.1088/2399-1984/accf54","url":null,"abstract":"Noble-metal-decorated semiconductor photocatalysts have attracted noticeable attention due to their enhanced photocatalytic activity. Herein, we have synthesized the pure rutile phase of TiO2 nanorods, with microflower morphology, using a hydrothermal method and decorated them with Au to observe plasmon-induced enhanced photocatalytic efficiency. The optical bandgap engineering through Au-decorated TiO2 introduces midgap states that help with charge compensation during photodegradation studies. The surface plasmonic resonance peak of Au is observed together with the defect peak of TiO2, extending the absorption of the solar spectrum from the UV to the visible region. The quenching in photoluminescence intensity with increased Au thickness indicates the formation of a Schottky junction at the interface of Au and TiO2 that helps to reduce photogenerated charge carrier recombination. The softening of the E g Raman mode and photothermal effects originate from the nonradiative decay of localized surface plasmons through electron–phonon and phonon–phonon relaxation. The photocatalytic degradation of Rhodamine 6G is monitored by exposing the sample to UV and visible light sources under Raman spectroscopy. The Au decoration plays a crucial role in promoting charge separation, Schottky junction creation, photothermal effects, and UV to visible light absorption to enhance photocatalytic activity, which can be explained on the basis of the charge transfer mechanism. Our in-situ photodegradation study at the interface of noble metal and semiconducting materials will pave the way toward improving the understanding of plasmon-enhanced photocatalytic applications.","PeriodicalId":54222,"journal":{"name":"Nano Futures","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2023-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46052221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent developments in the preparation and assembly of two-dimensional plate materials in Langmuir–Blodgett films: a review Langmuir-Blodgett薄膜中二维板材料制备与组装的最新进展

IF 2.1 4区材料科学

Nano Futures Pub Date : 2023-04-04 DOI: 10.1088/2399-1984/acca56

Tianyue Zhao, Ranlong Wang, Lin Li, T. Jiao

引用次数: 0

Key factors and performance criteria of wearable strain sensors based on polymer nanocomposites 基于聚合物纳米复合材料的可穿戴应变传感器的关键因素和性能标准

IF 2.1 4区材料科学

Nano Futures Pub Date : 2023-03-22 DOI: 10.1088/2399-1984/acc6ab

Aliya Zhagiparova, G. Kalimuldina, Abdullatif Lacina Diaby, F. Abbassi, Md. Hazrat Ali, S. Araby

引用次数: 0

Facile growth of high-yield and -crystallinity vertically aligned carbon nanotubes via a sublimated ferric chloride catalyst precursor 利用升华氯化铁催化剂前驱体制备高产量、高结晶度垂直排列的碳纳米管

IF 2.1 4区材料科学

Nano Futures Pub Date : 2023-03-14 DOI: 10.1088/2399-1984/acc43c

H. Goktas, N. Lachman, E. Kalfon-Cohen, Xiaoxue Wang, S. Torosian, K. Gleason, B. Wardle

{"title":"Facile growth of high-yield and -crystallinity vertically aligned carbon nanotubes via a sublimated ferric chloride catalyst precursor","authors":"H. Goktas, N. Lachman, E. Kalfon-Cohen, Xiaoxue Wang, S. Torosian, K. Gleason, B. Wardle","doi":"10.1088/2399-1984/acc43c","DOIUrl":"https://doi.org/10.1088/2399-1984/acc43c","url":null,"abstract":"A facile and effective catalyst deposition process for carbon nanotube (CNT) array growth via chemical vapor deposition using a resistively heated thermal evaporation technique to sublimate FeCl3 onto the substrate is demonstrated. The catalytic activity of the sublimated FeCl3 catalyst precursor is shown to be comparable to the well-studied e-beam evaporated Fe catalyst, and the resulting vertically aligned CNTs (VA-CNTs) have a similar diameter, walls, and defects, as well as improved bulk electrical conductivity. In contrast to standard e-beam-deposited Fe, which yields base-growth CNTs, scanning and transmission electron microscopy and X-ray photoelectron spectroscopy characterizations reveal a tip-growth mechanism for the FeCl3-derived VA-CNT arrays/forests. The FeCl3-derived forests have a lower (∼1/3 less) longitudinal indentation modulus, but higher longitudinal electrical conductivity (greater than twice) than that of the e-beam Fe-grown CNT arrays. The sublimation process to grow high-quality VA-CNTs is a highly facile and scalable process (extensive substrate shape and size, and moderate vacuum and temperatures) that provides a new route to synthesizing aligned CNT forests for numerous applications.","PeriodicalId":54222,"journal":{"name":"Nano Futures","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2023-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44193124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Real-time decoding for fault-tolerant quantum computing: progress, challenges and outlook 容错量子计算的实时解码：进展、挑战和展望

IF 2.1 4区材料科学

Nano Futures Pub Date : 2023-02-28 DOI: 10.1088/2399-1984/aceba6

F. Battistel, C. Chamberland, Kauser Johar, Ramon W. J. Overwater, F. Sebastiano, L. Skoric, Yosuke Ueno, M. Usman

{"title":"Real-time decoding for fault-tolerant quantum computing: progress, challenges and outlook","authors":"F. Battistel, C. Chamberland, Kauser Johar, Ramon W. J. Overwater, F. Sebastiano, L. Skoric, Yosuke Ueno, M. Usman","doi":"10.1088/2399-1984/aceba6","DOIUrl":"https://doi.org/10.1088/2399-1984/aceba6","url":null,"abstract":"Quantum computing is poised to solve practically useful problems which are computationally intractable for classical supercomputers. However, the current generation of quantum computers are limited by errors that may only partially be mitigated by developing higher-quality qubits. Quantum error correction (QEC) will thus be necessary to ensure fault tolerance. QEC protects the logical information by cyclically measuring syndrome information about the errors. An essential part of QEC is the decoder, which uses the syndrome to compute the likely effect of the errors on the logical degrees of freedom and provide a tentative correction. The decoder must be accurate, fast enough to keep pace with the QEC cycle (e.g. on a microsecond timescale for superconducting qubits) and with hard real-time system integration to support logical operations. As such, real-time decoding is essential to realize fault-tolerant quantum computing and to achieve quantum advantage. In this work, we highlight some of the key challenges facing the implementation of real-time decoders while providing a succinct summary of the progress to-date. Furthermore, we lay out our perspective for the future development and provide a possible roadmap for the field of real-time decoding in the next few years. As the quantum hardware is anticipated to scale up, this perspective article will provide a guidance for researchers, focusing on the most pressing issues in real-time decoding and facilitating the development of solutions across quantum, nano and computer science.","PeriodicalId":54222,"journal":{"name":"Nano Futures","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2023-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41580659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

Recent advances in magnetoresistance biosensors: a short review 磁阻生物传感器的研究进展

IF 2.1 4区材料科学

Nano Futures Pub Date : 2023-02-16 DOI: 10.1088/2399-1984/acbcb5

Clifton Dey, Parsa Yari, Kai Wu

引用次数: 1