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IF 2.4
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Pub Date : 2021-12-01 DOI: 10.1109/JXCDC.2021.3135824
{"title":"Information for authors","authors":"","doi":"10.1109/JXCDC.2021.3135824","DOIUrl":"https://doi.org/10.1109/JXCDC.2021.3135824","url":null,"abstract":"Provides instructions and guidelines to prospective authors who wish to submit manuscripts.","PeriodicalId":54149,"journal":{"name":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/6570653/9614983/09679375.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49964618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2021 Index IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Vol. 7 2021年索引IEEE探索性固态计算设备和电路杂志第7卷
IF 2.4
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Pub Date : 2021-12-01 DOI: 10.1109/JXCDC.2022.3145994
{"title":"2021 Index IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Vol. 7","authors":"","doi":"10.1109/JXCDC.2022.3145994","DOIUrl":"10.1109/JXCDC.2022.3145994","url":null,"abstract":"This index covers all technical items - papers, correspondence, reviews, etc. - that appeared in this periodical during the year, and items from previous years that were commented upon or corrected in this year. Departments and other items may also be covered if they have been judged to have archival value. The Author Index contains the primary entry for each item, listed under the first author's name. The primary entry includes the co-authors' names, the title of the paper or other item, and its location, specified by the publication abbreviation, year, month, and inclusive pagination. The Subject Index contains entries describing the item under all appropriate subject headings, plus the first author's name, the publication abbreviation, month, and year, and inclusive pages. Note that the item title is found only under the primary entry in the Author Index.","PeriodicalId":54149,"journal":{"name":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/6570653/9650774/09702893.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45548637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Biomedical Circuits and Systems Conference 生物医学电路和系统会议
IF 2.4
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Pub Date : 2021-12-01 DOI: 10.1109/JXCDC.2022.3140979
{"title":"Biomedical Circuits and Systems Conference","authors":"","doi":"10.1109/JXCDC.2022.3140979","DOIUrl":"https://doi.org/10.1109/JXCDC.2022.3140979","url":null,"abstract":"Describes the above-named upcoming conference event. May include topics to be covered or calls for papers.","PeriodicalId":54149,"journal":{"name":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/6570653/9650774/09679384.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49964617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits publication information 探索性固态计算器件和电路IEEE杂志出版信息
IF 2.4
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Pub Date : 2021-12-01 DOI: 10.1109/JXCDC.2021.3135850
{"title":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits publication information","authors":"","doi":"10.1109/JXCDC.2021.3135850","DOIUrl":"https://doi.org/10.1109/JXCDC.2021.3135850","url":null,"abstract":"Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.","PeriodicalId":54149,"journal":{"name":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/6570653/9650774/09679379.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49964431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Information for authors 作者信息
IF 2.4
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Pub Date : 2021-12-01 DOI: 10.1109/JXCDC.2021.3135816
{"title":"Information for authors","authors":"","doi":"10.1109/JXCDC.2021.3135816","DOIUrl":"https://doi.org/10.1109/JXCDC.2021.3135816","url":null,"abstract":"Provides instructions and guidelines to prospective authors who wish to submit manuscripts.","PeriodicalId":54149,"journal":{"name":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/6570653/9575178/09679381.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49964465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits publication information 探索性固态计算器件和电路IEEE杂志出版信息
IF 2.4
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Pub Date : 2021-12-01 DOI: 10.1109/JXCDC.2021.3135822
{"title":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits publication information","authors":"","doi":"10.1109/JXCDC.2021.3135822","DOIUrl":"https://doi.org/10.1109/JXCDC.2021.3135822","url":null,"abstract":"Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.","PeriodicalId":54149,"journal":{"name":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/6570653/9614983/09679378.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49964621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RFIC 2022 Call for Papers RFIC 2022征稿
IF 2.4
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Pub Date : 2021-12-01 DOI: 10.1109/JXCDC.2021.3120505
{"title":"RFIC 2022 Call for Papers","authors":"","doi":"10.1109/JXCDC.2021.3120505","DOIUrl":"https://doi.org/10.1109/JXCDC.2021.3120505","url":null,"abstract":"Describes the above-named upcoming conference event. May include topics to be covered or calls for papers.","PeriodicalId":54149,"journal":{"name":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/6570653/9575178/09679383.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49964464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits publication information 探索性固态计算器件和电路IEEE杂志出版信息
IF 2.4
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Pub Date : 2021-12-01 DOI: 10.1109/JXCDC.2021.3135814
{"title":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits publication information","authors":"","doi":"10.1109/JXCDC.2021.3135814","DOIUrl":"https://doi.org/10.1109/JXCDC.2021.3135814","url":null,"abstract":"Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.","PeriodicalId":54149,"journal":{"name":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/6570653/9575178/09679380.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49964467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization and Modeling of 22 nm FDSOI Cryogenic RF CMOS 22 nm FDSOI低温RF CMOS的表征与建模
IF 2.4
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Pub Date : 2021-11-25 DOI: 10.1109/JXCDC.2021.3131144
Wriddhi Chakraborty;Khandker Akif Aabrar;Jorge Gomez;Rakshith Saligram;Arijit Raychowdhury;Patrick Fay;Suman Datta
{"title":"Characterization and Modeling of 22 nm FDSOI Cryogenic RF CMOS","authors":"Wriddhi Chakraborty;Khandker Akif Aabrar;Jorge Gomez;Rakshith Saligram;Arijit Raychowdhury;Patrick Fay;Suman Datta","doi":"10.1109/JXCDC.2021.3131144","DOIUrl":"10.1109/JXCDC.2021.3131144","url":null,"abstract":"Analog and RF mixed-signal cryogenic-CMOS circuits with ultrahigh gain-bandwidth product can address a range of applications such as interface circuits between superconducting (SC) single-flux quantum (SFQ) logic and cryo-dynamic random-access memory (DRAM), circuits for sensing and controlling qubits faster than their decoherence time for at-scale quantum processor. In this work, we evaluate RF performance of 18 nm gate length (\u0000<inline-formula> <tex-math>$L_{G}$ </tex-math></inline-formula>\u0000) fully depleted silicon-on-insulator (FDSOI) NMOS and PMOS from 300 to 5.5 K operating temperature. We experimentally demonstrate extrapolated peak unity current-gain cutoff frequency (\u0000<inline-formula> <tex-math>$f_{T}$ </tex-math></inline-formula>\u0000) of 495/337 GHz (\u0000<inline-formula> <tex-math>$1.35times /1.25times $ </tex-math></inline-formula>\u0000 gain over 300 K) and peak maximum oscillation frequency (\u0000<inline-formula> <tex-math>$f_{mathrm {MAX}}$ </tex-math></inline-formula>\u0000) of 497/372 GHz (\u0000<inline-formula> <tex-math>$1.3times $ </tex-math></inline-formula>\u0000 gain) for NMOS/PMOS, respectively, at 5.5 K. A small-signal equivalent model is developed to enable design-space exploration of RF circuits at cryogenic temperature and identify the temperature-dependent and temperature-invariant components of the extrinsic and the intrinsic FET. Finally, performance benchmarking reveals that 22 nm FDSOI cryogenic RF CMOS provides a viable option for achieving superior analog performance with giga-scale transistor integration density.","PeriodicalId":54149,"journal":{"name":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2021-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/6570653/9650774/09627653.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43037016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Characterizing Ferroelectric Properties of Hf0.5Zr0.5O2 From Deep-Cryogenic Temperature (4 K) to 400 K 深低温(4 ~ 400 K)下Hf0.5Zr0.5O2铁电性能的表征
IF 2.4
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Pub Date : 2021-11-25 DOI: 10.1109/JXCDC.2021.3130783
Jae Hur;Yuan-Chun Luo;Zheng Wang;Sarah Lombardo;Asif Islam Khan;Shimeng Yu
{"title":"Characterizing Ferroelectric Properties of Hf0.5Zr0.5O2 From Deep-Cryogenic Temperature (4 K) to 400 K","authors":"Jae Hur;Yuan-Chun Luo;Zheng Wang;Sarah Lombardo;Asif Islam Khan;Shimeng Yu","doi":"10.1109/JXCDC.2021.3130783","DOIUrl":"10.1109/JXCDC.2021.3130783","url":null,"abstract":"Ferroelectric Hf\u0000<sub>0.5</sub>\u0000Zr\u0000<sub>0.5</sub>\u0000O\u0000<sub>2</sub>\u0000 (HZO) thin film has obtained considerable attention for emerging non-volatile memory (eNVM) and synaptic device applications. To our best knowledge, the polarization switching of HZO has not been comprehensively investigated in wide-ranging temperatures from deep-cryogenic 4 K to elevated temperature 400 K within the same set of test structures. In this work, we experimentally characterize the reliability effects such as endurance (wake-up, fatigue, and breakdown), retention (including imprint), and small-signal response of the HZO capacitor from the lowest temperature reported (4 K) to the elevated temperature (400 K). We demonstrate one of the highest endurance cycles \u0000<inline-formula> <tex-math>$ &gt; 3.5times 10^{10}$ </tex-math></inline-formula>\u0000 among reported TiN/HZO/TiN capacitors with negligible wake-up/fatigue effects or retention degradation, all obtained at 4 K. Based on the experimental results, we further simulated ferroelectric random access memory (FeRAM) and ferroelectric field-effect transistor (FeFET) to evaluate their potentials as cryogenic memories.","PeriodicalId":54149,"journal":{"name":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits","volume":null,"pages":null},"PeriodicalIF":2.4,"publicationDate":"2021-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/6570653/9650774/09627158.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47597845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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