Journal of Vacuum Science & Technology A最新文献_第3页

Molybdenum erosion in iodine plasma at hollow cathode conditions 碘等离子体在空心阴极条件下对钼的侵蚀

Journal of Vacuum Science & Technology A Pub Date : 2024-02-15 DOI: 10.1116/6.0003367

James D. Rogers, R. Branam

引用次数: 0

Effect of FeCrAl sublayer composition on the microstructure and corrosion resistance of FeCrAl/yttria-stabilized zirconia composite coatings 铁铬铝亚层成分对铁铬铝/钇稳定氧化锆复合涂层微观结构和耐腐蚀性的影响

Journal of Vacuum Science & Technology A Pub Date : 2024-02-01 DOI: 10.1116/6.0003114

Changda Zhu, Xi Qiu, Yuanming Li, Wei Zhang, Jian Yang, Yilong Zhong, Jiuguo Deng, Mingyang Zhou, Ning Liu, Jijun Yang

引用次数: 0

Control of microstructure and composition of reactively sputtered vanadium nitride thin films based on hysteresis curves and application to microsupercapacitors 基于滞后曲线的反应溅射氮化钒薄膜微结构和成分控制及在微型超级电容器中的应用

Journal of Vacuum Science & Technology A Pub Date : 2024-01-17 DOI: 10.1116/5.0177028

Allan Lebreton, M. Besland, P.-Y. Jouan, Tatiana Signe, Cédric Mannequin, Mireille Richard-Plouet, Maryline Le Granvalet, Christophe Lethien, Thierry Brousse, Jérémy Barbé

{"title":"Control of microstructure and composition of reactively sputtered vanadium nitride thin films based on hysteresis curves and application to microsupercapacitors","authors":"Allan Lebreton, M. Besland, P.-Y. Jouan, Tatiana Signe, Cédric Mannequin, Mireille Richard-Plouet, Maryline Le Granvalet, Christophe Lethien, Thierry Brousse, Jérémy Barbé","doi":"10.1116/5.0177028","DOIUrl":"https://doi.org/10.1116/5.0177028","url":null,"abstract":"Vanadium nitride (VN) thin films were prepared by reactive DC magnetron sputtering of a vanadium target using nitrogen as reactive gas. The structural, morphological, and compositional evolution of these films is described based on hysteresis diagrams plotting the sputtering power versus nitrogen flow rate. These diagrams, measured across various cathode voltages and discharge pressures, unveil three distinct deposition regimes: metallic, intermediate, and contaminated. The microstructure of the films was found to be closely linked to the deposition regime, ranging from dense and amorphous in the metallic regime to porous and crystalline in the contaminated regime, while the composition varies from vanadium-rich to near-stoichiometric VN. Sputtered VN thin films used as electrodes for microsupercapacitors were investigated by cyclic voltammetry. Results highlight that the intermediate deposition regime, characterized by high crystallinity and porosity, yields the highest capacitance values, above 900 F cm−3. Such high volumetric capacitance is attributed to the highly porous structure and large specific surface area. In addition, in these deposition conditions, films are composed of crystalline VN with a significant amount of amorphous VOx on the surface, which allow these thin film electrodes to behave both as current collectors and pseudocapacitive electrodes. This work gives detailed insights into VN thin film microstructure and composition in reactive sputtering based on hysteresis curves. It emphasizes how we could use these curves to target specific microstructure, composition, and eventually achieve functional properties. In particular, these findings have important implications for the design and optimization of microstructured electrodes for energy storage applications.","PeriodicalId":509398,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"27 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139527157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Numerical ellipsometry: Artificial intelligence for real-time, in situ absorbing film process control 数字椭偏仪：用于实时、原位吸收膜过程控制的人工智能

Journal of Vacuum Science & Technology A Pub Date : 2024-01-16 DOI: 10.1116/6.0003196

F. Urban, D. Barton

{"title":"Numerical ellipsometry: Artificial intelligence for real-time, in situ absorbing film process control","authors":"F. Urban, D. Barton","doi":"10.1116/6.0003196","DOIUrl":"https://doi.org/10.1116/6.0003196","url":null,"abstract":"Ellipsometry is a material analytical method in which the desired parameters, for example, film thickness and index of refraction, are related to the instrument measurements through Maxwell’s equations, light wavelength, and measurement geometry. Consequently, obtaining the desired parameters has required solving the model equations using a wide variety of methods. A commonly used method is least squares curve fitting, frequently the Levenberg–Marquardt method. This numerical method depends upon not only the model but also the initial estimates of solution, the possible interference of local minima, and the algorithm stopping conditions. Being iterative, it also takes nonzero time. The work here demonstrates the use of artificial intelligence in the form of a multilayer perceptron artificial neural network to avoid these problems and find solutions in the millisecond time scale. This noniterative, stable, and fast performance lends itself to real-time, in situ monitoring of thin film growth. Examples for thin (up to 30 nm) films will be given using a multilayer perceptron configuration consisting of four input and four output neurons with two hidden layers of 40 neurons each. Solutions are predicted by the artificial neural network at each wavelength independently and do not rely on fitting functions which express a relationship between optical properties and wavelength.","PeriodicalId":509398,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"30 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139528691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Processing and characterization of chalcopyrite semiconductors for photovoltaic applications 用于光伏应用的黄铜矿半导体的加工和表征

Journal of Vacuum Science & Technology A Pub Date : 2024-01-16 DOI: 10.1116/6.0003227

Angus Rockett

引用次数: 0

Micromechanical properties of micro- and nanocrystalline CVD diamond thin films with gradient microstructures and stresses 具有梯度微结构和应力的微晶和纳米晶 CVD 金刚石薄膜的微机械特性

Journal of Vacuum Science & Technology A Pub Date : 2024-01-12 DOI: 10.1116/6.0003235

M. Meindlhumer, T. Ziegelwanger, J. Grau, H. Sternschulte, M. Sztucki, D. Steinmüller-Nethl, J. Keckes

{"title":"Micromechanical properties of micro- and nanocrystalline CVD diamond thin films with gradient microstructures and stresses","authors":"M. Meindlhumer, T. Ziegelwanger, J. Grau, H. Sternschulte, M. Sztucki, D. Steinmüller-Nethl, J. Keckes","doi":"10.1116/6.0003235","DOIUrl":"https://doi.org/10.1116/6.0003235","url":null,"abstract":"Chemical vapor deposition produced diamonds attract considerable scientific and industrial interest due to their exceptional mechanical and functional properties. Here, hot filament (HF) chemical vapor deposition was used to synthesize two diamond thin films with different cross-sectional microstructure and residual stresses. Structural characterization by scanning electron microscopy, Raman spectroscopy, and cross-sectional synchrotron x-ray nanodiffraction revealed different diamond morphologies. While the microcrystalline diamond film exhibits pronounced microstructural gradients expressed by gradually increasing (i) intensities of the 111 Debye-Scherrer rings, (ii) ⟨110⟩ fiber texture sharpness, (iii) grain size, and (iv) slightly oscillating residual stress at the level of −0.5 GPa, the nanocrystalline diamond film showed no pronounced cross-sectional variation of microstructure above the nucleation zone of ∼0.5 μm and a steady stress level of 0.25 GPa. In situ micromechanical cantilever bending tests revealed highly different mechanical properties of the two films. In detail, Young's modulus of 830 ± 53 and 459 ± 53 GPa, fracture stress of 12.4 ± 0.8 and 7.8 ± 1.0 GPa, and fracture toughness values of 6.9 ± 0.4 and 3.6 ± 0.3 MPa⋅m½ were evaluated for the micro- and nanocrystalline diamond films, respectively. In summary, this study provides valuable insights into the microstructure-residual stress correlation in micro- and nanocrystalline diamond films, especially illuminating their influence on micromechanical properties.","PeriodicalId":509398,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"47 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139532167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal transport of defective β-Ga2O3 and B(In)GaO3 alloys from atomistic simulations 通过原子模拟研究有缺陷的 β-Ga2O3 和 B(In)GaO3 合金的热传输

Journal of Vacuum Science & Technology A Pub Date : 2024-01-12 DOI: 10.1116/6.0003214

Xiaoning Zhang, Haoyu Dong, Chao Yang, Xi Liang, Xing Li, Jia-yue Yang, Linhua Liu

{"title":"Thermal transport of defective β-Ga2O3 and B(In)GaO3 alloys from atomistic simulations","authors":"Xiaoning Zhang, Haoyu Dong, Chao Yang, Xi Liang, Xing Li, Jia-yue Yang, Linhua Liu","doi":"10.1116/6.0003214","DOIUrl":"https://doi.org/10.1116/6.0003214","url":null,"abstract":"β-Ga2O3 is a new generation of semiconductor material with a wide bandgap of 4.9 eV. However, the β-Ga2O3 devices inevitably produce defects within them after irradiation, leading to changes in their thermal conductivities. At present, the effect of radiation-damage-induced defects on thermal conductivity of β-Ga2O3 has not been carried out. Herein, we have employed molecular dynamics simulations to investigate the impact of defects on the thermal transport of β-Ga2O3, and the obtained thermal conductivity of non-defect β-Ga2O3 is in good agreement with recent reports. Our findings indicate that the thermal conductivity of β-Ga2O3 at room temperature exhibits a consistent decrease with an increase in the concentration of Ga vacancies, but shows a decreasing and then increasing trend as the number of O vacancies increases. In addition, doping/alloying is found to improve the irradiation resistance of β-Ga2O3 based on reported defect formation energy calculations, so the mechanism of alloying effect on the thermal conductivity is deeply analyzed through first-principles calculations. Moreover, the lattice thermal conductivities of ordered InGaO3 and BGaO3 alloys are predicted by solving the phonon Boltzmann transport equation. The obtained results that κ(Ga2O3) = κ(BGaO3) > κ(InGaO3) are attributed to the combined effect of volume, specific heat capacity, group velocity, and phonon lifetime of the three materials. This work can help to disclose the radiation damage influence on thermal properties of β-Ga2O3 semiconductors.","PeriodicalId":509398,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"54 21","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139531825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hydrogen absorption in an epitaxial thin film of high-entropy perovskite oxide 高熵过氧化物外延薄膜中的氢吸收

Journal of Vacuum Science & Technology A Pub Date : 2024-01-12 DOI: 10.1116/6.0003256

Takahiro Ozawa, Kaidong Wang, K. Nishio, R. Shimizu, T. Hitosugi, K. Fukutani

引用次数: 0

Cu2O/ZnO heterojunction self-powered photodetector performance regulation Cu2O/ZnO 异质结自供电光电探测器的性能调节

Journal of Vacuum Science & Technology A Pub Date : 2024-01-01 DOI: 10.1116/6.0003274

Siyuan Li, Man Zhao, Dayong Jiang, Mingyang Li, Meijiao Wang, Yanyan Peng, Jingda Gu

引用次数: 0

Determination of the X-Auger electron spectroscopy evolution of indium in InSb by linear and nonlinear least squares approaches 用线性和非线性最小二乘法确定 InSb 中铟的 X-Auger 电子能谱演变过程

Journal of Vacuum Science & Technology A Pub Date : 2024-01-01 DOI: 10.1116/6.0003086

S. Béchu, Neal Fairley

{"title":"Determination of the X-Auger electron spectroscopy evolution of indium in InSb by linear and nonlinear least squares approaches","authors":"S. Béchu, Neal Fairley","doi":"10.1116/6.0003086","DOIUrl":"https://doi.org/10.1116/6.0003086","url":null,"abstract":"X-ray photoelectron spectroscopy is a major and valuable chemical analysis technique that can bring a wide range of information if one takes time to carefully interpret the spectra. In particular, many metrological developments deal with the modeling of photoelectron peaks while X-Auger transitions still remain hardly exploited. Here, an innovative approach examining these spectral features in a complementary way is presented and illustrated on a concrete case dealing with chemical changes of indium in the InSb semiconductor during its air aging. Indium contains an extensive range of photopeaks along the energy scale, meaning electrons emitted from different escape depths are present on the same widescan spectrum, and, thus, information from different depths is accessible. Specifically, this study focuses on indium’s X-Auger electron spectroscopy (X-AES) transitions and decomposition to track the outer surface chemistry evolution of the InSb semiconductor. To this end, we compared linear and nonlinear least-squares approaches to decompose In M4,5N4,5N4,5 X-AES transition and demonstrate oxide growth progression. For both approaches, we applied the vectorial method (also known as the informed amorphous sample model) to retrieve the different chemical environments present during air aging. Linear and nonlinear least-squares approaches were both found to yield comparable results, with a comparative error of less than 10%. Over time, a progressive growth of the oxide layer was demonstrated, ranging from 0.3 ± 0.2 to 2.9 ± 0.2 nm using the X-AES transitions. Additionally, decomposition of the In 3d and In 4d photoelectron peaks showed a lower thickness of oxide with time due to the lesser surface sensitivity of these peaks.","PeriodicalId":509398,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"109 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139454300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Journal of Vacuum Science &amp; Technology A最新文献

Journal of Vacuum Science & Technology A最新文献