Alexandre Chapotot, Jérémie Chrétien, O. Fesiienko, E. Pargon, Jinyoun Cho, Kristof Dessein, A. Boucherif, G. Hamon, Maxime Darnon
{"title":"Enhancing minority carrier lifetime in Ge: Insights from HF and HCl cleaning procedures","authors":"Alexandre Chapotot, Jérémie Chrétien, O. Fesiienko, E. Pargon, Jinyoun Cho, Kristof Dessein, A. Boucherif, G. Hamon, Maxime Darnon","doi":"10.1116/6.0003236","DOIUrl":"https://doi.org/10.1116/6.0003236","url":null,"abstract":"Efficiently passivating germanium (Ge) surfaces is crucial to reduce the unwanted recombination current in high-performance devices. Chemical surface cleaning is critical to remove surface contaminants and Ge oxides, ensuring effective surface passivation after dielectric deposition. However, Ge oxides can rapidly regrow upon air exposure. To understand the surface evolution after wet cleaning, we present a comprehensive study comparing HF and HCl deoxidation steps on p-type Ge surfaces and monitor the surface as a function of air exposure time. Distinct oxide regrowth dynamics are observed: HF-treated samples exhibit swift regrowth of all Ge oxide states, whereas HCl-treated Ge surfaces exhibit a lower concentration of low degrees of oxidation and slower or no regrowth of high oxide states even after 110 min of air exposure. In addition, the presence of Ge–Cl bonds induces different oxidation dynamics compared to the Ge–OH bonds resulting from HF cleaning. This leads to varying surface electronic band structures, with HF-treated Ge exhibiting a strong positive band bending (+0.20 eV). Conversely, HCl-treated samples display a lower band curvature (+0.07 eV), mostly due to the presence of Ge–Cl bonds on the Ge surface. During air exposure, the increased GeOx coverage significantly reduces the band bending after HF, while a constant band bending is observed after HCl. Finally, these factors induce a reduction in the surface recombination velocity after wet etching. Combining both chemical and field-induced passivation, HF-treated Ge without rinsing exceeds 800 μs.","PeriodicalId":509398,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139393073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sen Sun, Wenyu Jiang, Qinxin Liu, Yueyong Jiang, Tianyi Zhu, Jie Hu, Honglian Song, Zheng Yang, Xinfeng Hui, Yuanxia Lao
{"title":"Suppression of phase segregations in Ge–Fe–Co–Ni–Mn films by high-entropy effect","authors":"Sen Sun, Wenyu Jiang, Qinxin Liu, Yueyong Jiang, Tianyi Zhu, Jie Hu, Honglian Song, Zheng Yang, Xinfeng Hui, Yuanxia Lao","doi":"10.1116/6.0003164","DOIUrl":"https://doi.org/10.1116/6.0003164","url":null,"abstract":"Fe–Co–Ni–Mn films doped with different concentrations of Ge were prepared on the Si substrates by using radio frequency magnetron sputtering. Transmission electron microscopy (with an energy dispersive x-ray spectrometer) and an x-ray diffractometer were used to systematically study the microstructure evolution of the Fe–Co–Ni–Mn–Ge films. The results indicate that the Fe–Co–Ni–Mn films doped with a large amount of Ge show significant element segregation after rapid high-temperature annealing. However, with the decrease in the doping amount of Ge to approximately equal molar ratio with magnetic elements, Ge and magnetic elements achieve perfect mutual dissolution at the same annealing conditions, forming single-phase solid solution. Electrical transport tests suggest that its electrical property is close to semiconductors. The mechanism of enhanced mutual solubility between semiconductor elements and magnetic elements is discussed in detail.","PeriodicalId":509398,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139394145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Photoemission study of plutonium oxycarbide","authors":"Paul Roussel","doi":"10.1116/6.0003238","DOIUrl":"https://doi.org/10.1116/6.0003238","url":null,"abstract":"Surface films of plutonium oxycarbide have shown oxidation retardation properties. The plutonium oxycarbide film analyzed in this study has a stoichiometry of PuC0.5O0.3 and is homogenous within the depth probed by x-ray photoelectron spectroscopy. The electronic structure of this plutonium oxycarbide surface film has been investigated using core level x-ray photoelectron spectroscopy and valence band ultraviolet photoelectron spectroscopy. The conduction band has been probed with inverse photoemission spectroscopy. The core level Pu 4f7/2 spectrum consists of two components occurring from the poor and well-screened final states. The valence band spectra display peaks attributable to occupied ligand states and both localized and itinerant Pu 5f electron behavior.","PeriodicalId":509398,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139394036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Peng Su, Junhong Pei, Jinping Luo, Guangyu Zheng, Yukang Sun, Lijun Liu
{"title":"Effects of the growth parameters on the surface quality of InN films","authors":"Peng Su, Junhong Pei, Jinping Luo, Guangyu Zheng, Yukang Sun, Lijun Liu","doi":"10.1116/6.0003205","DOIUrl":"https://doi.org/10.1116/6.0003205","url":null,"abstract":"On the basis of the improved Stillinger–Weber potential model, the growth process of an indium nitride (InN) film on a gallium nitride (GaN) substrate has been simulated by molecular dynamics. The effects of growth conditions, including the incident energy, polarity of the surface of the GaN substrate, substrate temperature, and deposited N:In atomic ratio, on the surface quality of the InN film have been investigated. We find that atoms with high incident energy have high mobility, which significantly improves the structures of the protrusions and pits on the surface of the film, thereby enhancing the surface quality. However, too high incident energy enhances the sputtering effect of the deposited particles on the surface atoms of the substrate and the destruction of the film, thereby reducing the density. On the basis of the optimal incident energy, the difference in the growth mode of InN films on the Ga-termination polarity surface and N-termination polarity surface is analyzed. At low temperatures, a three-dimensional island growth mode is present on the N-termination polarity surface and a two-dimensional layer growth mode is present on the Ga-termination polarity surface. It is easier to produce InN films with excellent surface quality on the Ga-termination polarity at low temperatures. Furthermore, according to the results obtained under different substrate temperatures and atomic deposition ratios, in an In-enriched environment, excessive In atoms are prone to form agglomerated island structures on the film surface, and the low-temperature substrate is more prone to produce an InN film with high surface quality. In an N-enriched environment, excessive N atoms combine with In atoms on the film surface to form a stepped island structure, and they are more prone to grow into an InN film with high surface quality on a high-temperature substrate.","PeriodicalId":509398,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139395589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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