ECS Journal of Solid State Science and Technology最新文献_第4页

The Dependence on Temperature of the Mn4+ Emission Intensity and Lifetime in Na2SiF6 Na2SiF6 中 Mn4+ 发射强度和寿命与温度的关系

ECS Journal of Solid State Science and Technology Pub Date : 2024-06-10 DOI: 10.1149/2162-8777/ad561b

William Beers, Mikhail Brik, Chong-Geng Ma, Willian E. Cohen, Alok Srivastava

引用次数: 0

Magnetic and Magnetocaloric Properties of C56 like-Fullerene Structure: A Monte Carlo Study C56 类富勒烯结构的磁性和磁致性：蒙特卡罗研究

ECS Journal of Solid State Science and Technology Pub Date : 2024-06-03 DOI: 10.1149/2162-8777/ad522d

S. Idrissi, A. Jabar, L. Bahmad

{"title":"Magnetic and Magnetocaloric Properties of C56 like-Fullerene Structure: A Monte Carlo Study","authors":"S. Idrissi, A. Jabar, L. Bahmad","doi":"10.1149/2162-8777/ad522d","DOIUrl":"https://doi.org/10.1149/2162-8777/ad522d","url":null,"abstract":"We explored the magnetic and magnetocaloric properties of the C56 Fullerene-like system formed by the mixed spins 2 and 3/2. We applied Monte Carlo simulations using the Metropolis algorithm and show the effects of different physical parameters. We also established the ground state phase diagrams, at zero reduced temperature, in different planes formed by the reduced external magnetic field, the reduced coupling interaction between the mixed spins, and the reduced crystal field. We found that the total magnetizations predict a specific reduced critical temperature value, confirmed by the peaks observed in the magnetic susceptibilities. To elucidate the behavior of the magnetic entropy changes -ΔSm, of the C56 system, for several external magnetic field values we show that the reduced critical temperature value tC increases when increasing the reduced external magnetic field. In addition, we show the dependency of the maximum “magnetic entropy change” as a function of the reduced external magnetic field. We found an almost linear increase for this parameter when increasing the reduced external magnetic field values. The obtained hysteresis cycles of the studied system showed a decreasing effect of the reduced crystal field followed by a decrease of the magnetic hysteresis surface cycles, as well as the corresponding reduced coercive magnetic field values.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141388996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication and Characterization of Functionally Graded Nanocomposites: Impact of Graphene and Vanadium Carbide on Aluminum Matrix 功能分级纳米复合材料的制备与表征：石墨烯和碳化钒对铝基体的影响

ECS Journal of Solid State Science and Technology Pub Date : 2024-05-16 DOI: 10.1149/2162-8777/ad4c96

Essam B. Moustafa, Mohamed Said, Abdulrahman Aljabri, Mohammed A. Taha, Rasha Youness, Hossameldin Hussein

{"title":"Fabrication and Characterization of Functionally Graded Nanocomposites: Impact of Graphene and Vanadium Carbide on Aluminum Matrix","authors":"Essam B. Moustafa, Mohamed Said, Abdulrahman Aljabri, Mohammed A. Taha, Rasha Youness, Hossameldin Hussein","doi":"10.1149/2162-8777/ad4c96","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4c96","url":null,"abstract":"\u0000 Functional graded nanocomposites (FGNCs) based on Al are artificially tailored heterogeneous materials intended to serve the demand for diverse and contradicting properties used in various industrial applications. FGNCs and hybrid FGNCs (HFGNCs) based on Al reinforced with graphene and vanadium carbide (VC) were prepared using powder metallurgy techniques and investigated. Both samples were designed with a gradient composition, where the bottom layer consisted of 100% pure Al, followed by three consecutive layers containing progressively increasing amounts of reinforcement. The incorporation of graphene and VC into layer powders resulted in a decrease in both particle and crystal dimensions compared to pure Al. Adding graphene has a negative effect on bulk density samples, while VC has a positive effect. Reinforcing materials led to a decrease in thermal conductivity that reached 26.7 % for samples reinforced with VC reinforcement, except for FGNCs reinforced with graphene, which increased by ~3.3 compared to Al. The samples’ CTE and electrical conductivity values decreased, although adding graphene alone led to a slight decrease in electrical conductivity. A significant improvement in all mechanical properties was noted with additional. The HFGCNs reinforced with the largest amount of hybrid reinforcement recorded an improvement in CTE value, Young's modulus, and compressive strength by about 38.1%, 22.2%, and 20.5%, respectively, compared to Al","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140969843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Review—Recent Advancements in Perovskites Solar Cell Materials and the Investigation of Transition Metal Oxide-Based Nanocomposites for Usage in Perovskites Solar Cells 综述--过氧化物太阳能电池材料的最新进展以及用于过氧化物太阳能电池的过渡金属氧化物基纳米复合材料的研究

ECS Journal of Solid State Science and Technology Pub Date : 2024-05-16 DOI: 10.1149/2162-8777/ad4c95

G. AlZaidy, Hamdah T.A. Alanazi

{"title":"Review—Recent Advancements in Perovskites Solar Cell Materials and the Investigation of Transition Metal Oxide-Based Nanocomposites for Usage in Perovskites Solar Cells","authors":"G. AlZaidy, Hamdah T.A. Alanazi","doi":"10.1149/2162-8777/ad4c95","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4c95","url":null,"abstract":"\u0000 Perovskite solar cells (PSC) have drawn interest in recent years due to their progressively improving power conversion efficiency (PCE), lightweight and wearable properties, straightforward solution fabrication process, suitability for flight, potential for deployment in ultra-lightweight space applications, and low-cost material constituents, among other factors. The efficiency of perovskite solar cells has exceeded 25% by developing novel low-cost synthesis methods and advancements in interface and electrode materials, enhancing the production of high-quality perovskite films. Moreover, perovskite solar cells' stability has been the focus of several studies. This review primarily examines recent advances in perovskite solar cells concerning their properties, composition, and synthesis methods. The main focus is to study transition metal oxide (TMO)-based nanocomposites for various PSC layers, including electron transport layers (ETLs), hole transport layers (HTLs), and other layers. These TMO-based nanocomposites were employed in perovskite solar cells, considering their band gap, carrier mobility, transmittance, and other relevant factors. The prospects of different TMO (iron, titanium, copper, nickel, etc.) -based perovskite solar cells and their potential for commercialization feasibility have also been examined.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140968128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Circuit Level Implementation of Negative Capacitance Source Pocket Double Gate Tunnel FET for Low Power Applications 用于低功耗应用的负电容源插座双栅极隧道场效应晶体管的电路级实现

ECS Journal of Solid State Science and Technology Pub Date : 2024-05-14 DOI: 10.1149/2162-8777/ad4b9c

K. M. C. Babu, Ekta Goel

引用次数: 0

Self-Induced Ge-Doped HfO2 Applied to Ge Stacked Nanowires Ferroelectric Gate-all-Around Field-Effect Transistor with Steep Subthreshold Slope Under O3 Treatment with GeO2 as Interfacial Layer 在以 GeO2 为界面层的 O3 处理条件下，应用于 Ge 叠层纳米线的具有陡峭次阈值斜率的自诱导 Ge 掺杂 HfO2 铁电栅极全方位场效应晶体管

ECS Journal of Solid State Science and Technology Pub Date : 2024-05-14 DOI: 10.1149/2162-8777/ad4b9d

Yi-Wen Lin, Yu-Hsien Huang, Shan-Wen Lin, Guang-Li Luo, YuHsien Lin, Yung-Chun Wu, Fu-Ju Hou

{"title":"Self-Induced Ge-Doped HfO2 Applied to Ge Stacked Nanowires Ferroelectric Gate-all-Around Field-Effect Transistor with Steep Subthreshold Slope Under O3 Treatment with GeO2 as Interfacial Layer","authors":"Yi-Wen Lin, Yu-Hsien Huang, Shan-Wen Lin, Guang-Li Luo, YuHsien Lin, Yung-Chun Wu, Fu-Ju Hou","doi":"10.1149/2162-8777/ad4b9d","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4b9d","url":null,"abstract":"\u0000 This study reports a self-induced ferroelectric Ge-doped HfO2 (Ge:HfO2) thin film through interface reactions. In the first experiment, three treatments for forming interfacial layer (IL) were discussed through TiN/2-nm-thick Al2O3/2-nm-thick Ge:HfO2/GeO2/Ge metal-ferroelectric-insulator-semiconductor capacitors. The remnant polarization (Pr), leakage current, and interface trap density (Dit) were compared to select the most appropriate IL treatment. The results show that the in-situ ozone treatment under the standard atomic layer deposition process had the second highest 2Pr value as well as lower Dit values. Next, the thicknesses of Al2O3/Ge:HfO2 would be changed to 4/2 nm and 3/3 nm to investigate the ferroelectricity and leakage current. Although the 3-nm-thick Al2O3/3-nm-thick Ge:HfO2 shows a lower 2Pr value, the leakage current is much lower than 2-nm-thick Al2O3/2-nm-thick Ge:HfO2. The self-induced ferroelectric 3-nm-thick Ge:HfO2 thin film was then applied to fabricate Ge stacked nanowires gate-all-around field-effect transistor. The results show a steep subthreshold slope of 58 mV/dec for pFET and on-off current ratio > 105 and have high potential in low-power IC applications.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140978905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Point-of-Care Detection of HER2 and CA 15-3 in Breast Cancer Patients: Dual-Channel Biosensor Implementation 乳腺癌患者 HER2 和 CA 15-3 的护理点检测：双通道生物传感器的实现

ECS Journal of Solid State Science and Technology Pub Date : 2024-05-13 DOI: 10.1149/2162-8777/ad4ac4

Hsiao-Hsuan Wan, Haochen Zhu, Chao-Ching Chiang, Xinyi Xia, Jian-Sian Li, Fan Ren, Cheng-Tse Tsai, Yu-Te Liao, Tai-Cheng Chou, D. Neal, J. Esquivel-Upshaw

{"title":"Point-of-Care Detection of HER2 and CA 15-3 in Breast Cancer Patients: Dual-Channel Biosensor Implementation","authors":"Hsiao-Hsuan Wan, Haochen Zhu, Chao-Ching Chiang, Xinyi Xia, Jian-Sian Li, Fan Ren, Cheng-Tse Tsai, Yu-Te Liao, Tai-Cheng Chou, D. Neal, J. Esquivel-Upshaw","doi":"10.1149/2162-8777/ad4ac4","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4ac4","url":null,"abstract":"\u0000 Breast cancer remains a considerable health challenge, affecting numerous individuals annually. This research introduces an innovative method for detecting breast cancer utilizing dual-channel test strips capable of simultaneously assessing two key biomarkers—HER2 and CA 15-3. The test strip utilized in this study is not only cost-effective but also entirely non-invasive. The reusable device employs a printed circuit board with metal-oxide-semiconductor field-effect transistor amplification and Arduino-based control to convert voltage signals from test strips into digital readings efficiently. The device utilizes double-pulse measurement instead of direct current, effectively mitigating the screening effect. The detection limit for both biomarkers is exceptionally low at 10-15 g/mL, surpassing commercial enzyme-linked immunoassay kits by four orders of magnitude. The sensor demonstrates remarkable sensitivity, with 78/dec for HER2 and 56/dec for CA 15-3. Human sample tests were conducted to validate the efficacy of the dual-channel strip, successfully distinguishing between healthy and cancerous groups. The results reveal significant p-values for both HER2 and CA 15-3 tests, underscoring the significance of this research. Note that this is a rapid testing process, completed in less than 2 seconds. These findings offer a promising avenue for swift and accurate breast cancer detection, furnishing crucial insights for early diagnosis and subsequent treatment.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140984704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT p-GaN 栅 AlGaN/GaN HEMT 在不同离态漏极电压和 ON 态漏极电流条件下进行双脉冲测试后的阈值电压不稳定性

ECS Journal of Solid State Science and Technology Pub Date : 2024-05-10 DOI: 10.1149/2162-8777/ad49d6

Chih-wei Chen, Hao-Hsuan Lo, Y. Hsin

引用次数: 0

Red Photoluminescence from Fe-Doped MgAl2O4 Crystals 掺杂铁的 MgAl2O4 晶体发出红色光致发光

ECS Journal of Solid State Science and Technology Pub Date : 2024-05-09 DOI: 10.1149/2162-8777/ad497b

Ami Hitomi, Arisa Mori, Ririka Watanabe, Toru Katsumata, Hiroaki Aizawa

引用次数: 0

Controllable Fabrication of Silicon Solar Cells with Inverted or Upright Pyramid Structures by a One-Step Copper Catalysis Method 通过铜催化一步法可控制造具有倒置或直立金字塔结构的硅太阳能电池

ECS Journal of Solid State Science and Technology Pub Date : 2024-05-09 DOI: 10.1149/2162-8777/ad497a

Chenliang Huo

{"title":"Controllable Fabrication of Silicon Solar Cells with Inverted or Upright Pyramid Structures by a One-Step Copper Catalysis Method","authors":"Chenliang Huo","doi":"10.1149/2162-8777/ad497a","DOIUrl":"https://doi.org/10.1149/2162-8777/ad497a","url":null,"abstract":"\u0000 Silicon has garnered significant attention as the primary material for solar cell preparation. Traditional alkaline etching solutions are limited to creating an upright pyramid structure on monocrystalline silicon surfaces. However, research indicates that an inverted pyramid structure exhibits superior light-trapping properties compared to the upright pyramid structure. In this study, we employed a one-step copper ion metal-assisted chemical etching process to fabricate an inverted pyramid structure on monocrystalline silicon wafers. This method allows for the customization of either inverted or upright pyramid structures by adjusting the concentration of specific solution components. Characterization of the textured silicon wafers reveals that the inverted pyramid structure exhibits lower reflectivity than both the upright pyramid structure and polished silicon. By integrating this texturing technique into the solar cell production line, we successfully produced solar cells with both inverted and upright pyramid structures. Evaluation of various solar cell parameters demonstrates that the inverted pyramid structure outperforms the upright pyramid structure, showcasing lower reflectivity and higher photoelectric conversion efficiency.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140996403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0