ECS Journal of Solid State Science and Technology最新文献_第10页

Experimental and Theoretical Study on the Influence of Fatty Alcohol Polyoxyethylene Ether on the Surface Roughness of Silicon in Alkaline Solutions 脂肪醇聚氧乙烯醚对碱性溶液中硅表面粗糙度影响的实验和理论研究

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-09 DOI: 10.1149/2162-8777/ad1c8a

Xueyan Yang, Qi Fang, Ming Sun, Meiling Qi

{"title":"Experimental and Theoretical Study on the Influence of Fatty Alcohol Polyoxyethylene Ether on the Surface Roughness of Silicon in Alkaline Solutions","authors":"Xueyan Yang, Qi Fang, Ming Sun, Meiling Qi","doi":"10.1149/2162-8777/ad1c8a","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1c8a","url":null,"abstract":"\u0000 In the final polishing process of silicon, it is susceptible to alkaline anisotropic chemical etch and may have residual silicon sol on the surface, leading to an increase in the surface roughness of the wafer. To address this issue, this study investigates the mechanisms of how fatty alcohol polyoxyethylene ether AEO-9 and O-20 affect the surface roughness of silicon through systematic experimental measurements and theoretical calculations. The research results demonstrate that both AEO-9 and O-20 exhibit strong molecular activity and can adsorb on the silicon surface in a parallel manner, forming a protective film that effectively shields against corrosive particle erosion. Additionally, AEO-9 and O-20 can enhance the wetting of corrosive solutions on the silicon surface, resulting in more uniform chemical etch and reduced formation of etching pits. Furthermore, AEO-9 and O-20 can reduce the residual silicon sol on the silicon surface, thereby decreasing surface roughness. These findings shed new light on how AEO-9 and O-20 affect surface roughness on silicon, and suggest their potential use in the final polishing of silicon wafers.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139443864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrical Transport Properties and Hopping Mechanism of ZrCuSiAs Type Compound GdFeAsO ZrCuSiAs 型化合物 GdFeAsO 的电传输特性和跳变机制

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-09 DOI: 10.1149/2162-8777/ad1c8e

Gyanendra Kumar Mishra, Prafulla Kumar Pradhan, N. K. Mohanty

{"title":"Electrical Transport Properties and Hopping Mechanism of ZrCuSiAs Type Compound GdFeAsO","authors":"Gyanendra Kumar Mishra, Prafulla Kumar Pradhan, N. K. Mohanty","doi":"10.1149/2162-8777/ad1c8e","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1c8e","url":null,"abstract":"\u0000 Iron-based ceramic GdFeAsO has been prepared using the solid-state reaction method. This material exhibits unique properties, showing superconductivity at extremely low temperatures and behaving as a semiconductor at high temperatures. Raman spectroscopy revealed various Raman active modes in the sample. UV-visible spectroscopy was employed to study the optical properties of the material in the wavelength range of 200-800 nm. Using Tauc's plot, the optical band energy values of the sample were estimated to be approximately 2.78 eV. The electrical characterizations have been performed through an impedance analyzer. Additionally, the sample displayed negative temperature coefficient of resistance behavior and positive temperature coefficient resistance. The thermistor parameters are evaluated using the bulk resistance at various temperatures. This opens up potential uses for thermistors in devices like fuses and temperature sensors. The ac conductivity spectrum of the sample followed both Jonscher's universal power law and the Arrhenius equation. The activation energy was calculated for different temperature regions. The correlated barrier hopping model is used to analyze the electrical conduction mechanism in the sample. This study provides insights into the unique electrical and optical properties of the GdFeAsO ceramic and sheds light on its potential applications in various fields.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139443108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unveiling the Versatile Realm of CdSnO3 Nanoparticles for Advanced Sensing Applications 揭开用于先进传感应用的 CdSnO3 纳米粒子的多面性面纱

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-09 DOI: 10.1149/2162-8777/ad1c8c

P. Usha, S. Ramesh, J. P, Mariappan R

{"title":"Unveiling the Versatile Realm of CdSnO3 Nanoparticles for Advanced Sensing Applications","authors":"P. Usha, S. Ramesh, J. P, Mariappan R","doi":"10.1149/2162-8777/ad1c8c","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1c8c","url":null,"abstract":"\u0000 This study presents the synthesis and characterization of thin-film CdSnO3 nanoparticles at different deposition temperatures of 400, 500, and 600°C. The prepared samples were characterized by X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, transmission electron microscopy (TEM) and optical and ammonia gas sensing properties, respectively. XRD confirms the orthorhombic crystal structure, with prominent peaks corresponding to the (111), (112), (103), (130), and (133) planes. The mean crystallite size is determined to be 84 nm. SEM reveals morphological changes with varying substrate temperatures. EDX spectroscopy shows elemental composition variations, highlighting non-stoichiometric CdSnO3. TEM images depict larger spherical nanoparticles with clear lattice fringes. FTIR spectra confirm the presence of Cd-O and Sn-O bonds. Optical properties yield a calculated band gap was decreased with increase in temperature. Gas sensing tests demonstrate significant sensitivity to ammonia gas concentrations, with responses affected by ammonia concentrations. Overall, CdSnO3 nanoparticles show promise for applications in diverse fields due to their tunable properties and potential for tailored performance.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139444464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization and Mechanism of SiO2-Based Slurry Components for Atomically Smooth Gallium Nitride Surface Obtained Using Chemical Mechanical Polishing Techniques 利用化学机械抛光技术获得原子光滑氮化镓表面的二氧化硅基浆料成分的优化与机理

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-09 DOI: 10.1149/2162-8777/ad1c89

Wenhao Xian, Baoguo Zhang, Min Liu, P. Wu, Ye Wang, Shitong Liu, Dexing Cui

{"title":"Optimization and Mechanism of SiO2-Based Slurry Components for Atomically Smooth Gallium Nitride Surface Obtained Using Chemical Mechanical Polishing Techniques","authors":"Wenhao Xian, Baoguo Zhang, Min Liu, P. Wu, Ye Wang, Shitong Liu, Dexing Cui","doi":"10.1149/2162-8777/ad1c89","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1c89","url":null,"abstract":"\u0000 With the ongoing progress of mobile communications and new energy technologies, the market interest in high-frequency and high-power semiconductor devices has risen. Gallium nitride (GaN), a wide bandgap semiconductor material, has become a popular area of research in relevant fields. A sufficiently flat material surface can significantly enhance the device's performance. Therefore, this paper explores the effect of oxidants on the quality of GaN surface during chemical mechanical polishing (CMP). Atomic force microscopy (AFM) was employed to examine the surface morphology of GaN after each CMP experiment. The aim was to evaluate the effect of specific slurry components on GaN surface quality. The results revealed that the introduction of oxidizers, particularly the potent oxidizer potassium persulfate (K2S2O8), was advantageous in reducing the surface roughness Sq and thus, enhancing the surface quality of GaN. The surface roughness (Sq) of GaN was reduced from 7.7 to 0.78 nm after the CMP process with the optimal components. AFM tests were conducted on different areas of the GaN surface within a range of 1 μm2, which revealed that clear images of the GaN atomic steps can be obtained, and the Sq can reach as low as 0.26 nm.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139442169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Prospect of Nano-Enabled Optical Biosensors for Antibiotic Abuse Surveillance as an Early Prevention Tool for Antimicrobial Resistance 纳米光学生物传感器在抗生素滥用监测中的应用前景--抗生素耐药性的早期预防工具

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-09 DOI: 10.1149/2162-8777/ad1c8d

Vishal Chaudhary, S. Rustagi, Ajeet Kumar Kaushik, Manisha Bhutani

引用次数: 0

Comprehensive Structural Analysis Identifies the Relationships Between the Electrical Characteristics of Environmentally Friendly NBTMn-BAl-NaNb Ceramics 综合结构分析确定了环保型 NBTMn-BAl-NaNb 陶瓷电气特性之间的关系

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-09 DOI: 10.1149/2162-8777/ad1c8f

Gadiraju Venkata Vijaya Bhaskara Rao, Sobhanachalam p, Vijaya Dasaradha Sani, B. Avula, Giridhar Babu N, K. R. Kandula, Goutham Cilaveni, Ashok A, Anees Ansari, Sambasiva Rao T, Gangadhar S, Chittibabu A

{"title":"Comprehensive Structural Analysis Identifies the Relationships Between the Electrical Characteristics of Environmentally Friendly NBTMn-BAl-NaNb Ceramics","authors":"Gadiraju Venkata Vijaya Bhaskara Rao, Sobhanachalam p, Vijaya Dasaradha Sani, B. Avula, Giridhar Babu N, K. R. Kandula, Goutham Cilaveni, Ashok A, Anees Ansari, Sambasiva Rao T, Gangadhar S, Chittibabu A","doi":"10.1149/2162-8777/ad1c8f","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1c8f","url":null,"abstract":"\u0000 We give an in-depth examination of the structural and electrical features of NBTMn-BAl-NaNb ceramics. The comprehensive structural investigation indicated an important connection among the phase and polarization mechanisms of the compounds/samples by Nb substitution. The quantitative study of phase contribution shown by Raman spectroscopy is confirmed by structural refinement inquiries. The significant polarization difference in NBTMn–BAl–NaNb was found to be in excellent agreement with the structural presence of a dual phase contribution, which was confirmed through structural refinement. The substitution of NaNb in NBTMn–BAl led to a significant shift in average grain size (~1 μm). It was additionally found that the dielectric constant of NBTMn–BAl–NaNb was greater than typical, lowering the depolarization temperature. This modification resulted in reduced dielectric loss as well as shifts in coordination and structural features. The room-temperature bipolar and unipolar strain S(%) ~1.5, and the fact that the substitution of NaNb leads to an increase in both (bipolar and unipolar), represents structural symmetry modulation. As a result of this, these were discovered to be feasible prospects for current generation applications.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139444721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Trap States and Carrier Diffusion in Czochralski (100) Single Crystal β-Ga2O3 Czochralski (100) 单晶 β-Ga2O3 中的阱态和载流子扩散

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-08 DOI: 10.1149/2162-8777/ad1bda

Vladimir I Nikolaev, A. Polyakov, V. Krymov, Sevastian Shapenkov, Pavel Butenko, E. Yakimov, Anton Vasilev, I. Shchemerov, A. Chernykh, N. Matros, Luiza Alexanyan, Anastasiia I Kochkova, S. Pearton

{"title":"Trap States and Carrier Diffusion in Czochralski (100) Single Crystal β-Ga2O3","authors":"Vladimir I Nikolaev, A. Polyakov, V. Krymov, Sevastian Shapenkov, Pavel Butenko, E. Yakimov, Anton Vasilev, I. Shchemerov, A. Chernykh, N. Matros, Luiza Alexanyan, Anastasiia I Kochkova, S. Pearton","doi":"10.1149/2162-8777/ad1bda","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1bda","url":null,"abstract":"\u0000 Deep trap spectra and carrier diffusion lengths were measured for unintentionally doped β- Ga2O3 bulk crystals with (100) orientation. The 20-mm diameter, 15-mm length boule was pulled by the Czochralski method in the (010) direction. The net density of shallow donors in (100) plates cleaved from the crystal was 2.6×1017 cm-3, with ionization energies of 0.05 eV measured from admittance spectra. Three deep electron traps with respective ionization energies of 0.6 eV (concentration 1.1×1014 cm-3) 0.8 eV (concentration 3.9×1016 cm-3) and 1.1 eV (concentration 8.9×1015 cm-3) were detected by deep level transient spectroscopy. The dominant 0.8 eV trap is associated with the E2 centers due to Fe acceptors, the two other traps are the well documented E1 and E3 centers. The major deep acceptors in the lower half of the bandgap have optical ionization threshold of 2.3 eV and concentration of 4×1015 cm-3 and are believed to be due to the split Ga vacancies acceptors. The diffusion length of non-equilibrium charge carriers was 90 nm. The electrical properties of these (100) oriented crystals grown by Czochralski are quite similar to those synthesized by the undoped edge-defined film-fed growth technique.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139445010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Binder-Free Flexible Chickpea Pod Derived Activated Carbon-Carbon Nanofiber Composite for Supercapacitor Application 用于超级电容器的无粘结剂柔性蚕豆荚衍生活性碳-碳纳米纤维复合材料

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-02 DOI: 10.1149/2162-8777/ad19e7

Usha Rani Malothu, K. Donthula, M. Kakunuri, G. N. Nageswara Rao

{"title":"Binder-Free Flexible Chickpea Pod Derived Activated Carbon-Carbon Nanofiber Composite for Supercapacitor Application","authors":"Usha Rani Malothu, K. Donthula, M. Kakunuri, G. N. Nageswara Rao","doi":"10.1149/2162-8777/ad19e7","DOIUrl":"https://doi.org/10.1149/2162-8777/ad19e7","url":null,"abstract":"\u0000 In the present study, a novel carbon-carbon composite electrode was prepared by embedding activated carbon derived from chickpea pods and evaluating its potential as an electrode for supercapacitors. A simple, single-step electrospinning technique was used for the synthesis of activated carbon-carbon nanofiber composite. The synthesized activated carbon-carbon nanofiber composite electrode is flexible and binder-free with high specific surface area, micro and meso pores, interconnected fiber-to-flake morphology and possess high graphitization. Additionally, rapid electrolyte diffusion has resulted in a low charge transfer resistance due to interconnected morphology. In 6 M KOH electrolyte, composite binder-free electrode shows a specific capacitance of 147 F g-1 at 0.5 A g-1 compared to activated carbon electrodes that showed a specific capacitance of 120 F g-1 at 0.5 A g-1. It exhibits an energy density of 13 Wh k g-1 at 0.366 W k g-1 power density. It also showed impressive cyclic stability by retaining 93.5 % of initial capacitance till 1200 cycles at 1 A g-1. Overall, the study presents an easy-to-use, low-cost, eco-friendly, and flexible electrode for supercapacitors that is free of binder.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139453053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0