Experimental and Theoretical Study on the Influence of Fatty Alcohol Polyoxyethylene Ether on the Surface Roughness of Silicon in Alkaline Solutions

Xueyan Yang, Qi Fang, Ming Sun, Meiling Qi
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Abstract

In the final polishing process of silicon, it is susceptible to alkaline anisotropic chemical etch and may have residual silicon sol on the surface, leading to an increase in the surface roughness of the wafer. To address this issue, this study investigates the mechanisms of how fatty alcohol polyoxyethylene ether AEO-9 and O-20 affect the surface roughness of silicon through systematic experimental measurements and theoretical calculations. The research results demonstrate that both AEO-9 and O-20 exhibit strong molecular activity and can adsorb on the silicon surface in a parallel manner, forming a protective film that effectively shields against corrosive particle erosion. Additionally, AEO-9 and O-20 can enhance the wetting of corrosive solutions on the silicon surface, resulting in more uniform chemical etch and reduced formation of etching pits. Furthermore, AEO-9 and O-20 can reduce the residual silicon sol on the silicon surface, thereby decreasing surface roughness. These findings shed new light on how AEO-9 and O-20 affect surface roughness on silicon, and suggest their potential use in the final polishing of silicon wafers.
脂肪醇聚氧乙烯醚对碱性溶液中硅表面粗糙度影响的实验和理论研究
在硅的最终抛光过程中,硅容易受到碱性各向异性化学蚀刻的影响,表面可能会残留硅溶胶,导致硅片表面粗糙度增加。针对这一问题,本研究通过系统的实验测量和理论计算,研究了脂肪醇聚氧乙烯醚 AEO-9 和 O-20 如何影响硅表面粗糙度的机理。研究结果表明,AEO-9 和 O-20 都具有很强的分子活性,能以平行方式吸附在硅表面,形成一层保护膜,有效抵御腐蚀性颗粒的侵蚀。此外,AEO-9 和 O-20 还能增强腐蚀性溶液在硅表面的润湿性,从而使化学蚀刻更加均匀,并减少蚀刻坑的形成。此外,AEO-9 和 O-20 还能减少硅表面的残留硅溶胶,从而降低表面粗糙度。这些发现为 AEO-9 和 O-20 如何影响硅表面粗糙度提供了新的思路,并表明它们在硅晶片最终抛光中的潜在用途。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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