ECS Journal of Solid State Science and Technology最新文献_第9页

Investigation on Germanium Transistors with HfOx-Based Gate Stacks for CMOS Operations 研究用于 CMOS 操作的基于 HfOx 栅极堆栈的锗晶体管

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-17 DOI: 10.1149/2162-8777/ad1f92

Tzu-Chieh Hong, Chun-Jung Su, Yao-Jen Lee, Yiming Li, Seiji Samukawa, Tien-Sheng Chao

引用次数: 0

Ameliorated DC Insulation Performance of EPDM through Chemical Grafting with a Voltage Stabilizer 通过化学接枝稳定剂改善三元乙丙橡胶的直流绝缘性能

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-17 DOI: 10.1149/2162-8777/ad1f91

Jibin Zhang, Zhong-Yuan Li, Jian Zhang

{"title":"Ameliorated DC Insulation Performance of EPDM through Chemical Grafting with a Voltage Stabilizer","authors":"Jibin Zhang, Zhong-Yuan Li, Jian Zhang","doi":"10.1149/2162-8777/ad1f91","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1f91","url":null,"abstract":"\u0000 Ethylene-Propylene-Diene Rubber (EPDM) is widely utilized as a high-performance insulation material in high-voltage direct current (HVDC) cable accessories, owing to its exceptional electrical and thermal properties. In this study, we have successfully synthesized and employed 4-vinyl oxyacetophenone (VPE) as a modification agent to develop the chemically grafted EPDM materials (EPDM-g-VPE) just through thermal crosslinking reaction and melt blending approach. Infrared spectroscopy results reveal that during thermal cross-linking process, VPE efficiently grafted onto EPDM molecular-chains through free radical addition reaction. Following VPE grafting, the DC dielectric breakdown strength and electrical conductivity of EPDM are significantly increased and noticeably decreased respectively. Theoretical electronic structure calculations corroborate that VPE's electron-affinity and energy-gap enable it to efficiently absorb thermal electron energy without undergoing collision ionization, thereby enhancing EPDM's breakdown resistance. Simultaneously, VPE molecules exhibit a high affinity for capturing electron charge carriers within EPDM polymer-molecules. Space charge and thermally stimulated current tests demonstrate that the stable and uniformly distributed charge traps can be effectively introduced into EPDM matrix by grafting VPE modification, thereby suppressing transport and injection of charge carriers. Consequently, this approach substantially improves DC electrical insulation performance of EPDM.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139616670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics 具有 p-GaN 扩展栅极的 AlGaN-GaN HEMT，可改善电流扩散和击穿特性

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-17 DOI: 10.1149/2162-8777/ad1f93

Krishna Sai Sriramadasu, Y. Hsin

引用次数: 0

A Study on the Large AMOLED Display Backplane-Less Mask Process 大型 AMOLED 显示屏无背板掩膜工艺研究

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-17 DOI: 10.1149/2162-8777/ad1f90

in young Chung, Guanghai Kim, Hyunsik Yoon

引用次数: 0

Review —Recent Advances in Yttrium Titanate Pyrochlores: Crystal Structure and Impact of Doping Elements 回顾--钛酸钇热裂解物的最新研究进展：晶体结构和掺杂元素的影响

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-17 DOI: 10.1149/2162-8777/ad1f8e

Supriyal Subramani

引用次数: 0

Electronic and Optical Properties of Mn-Doped HgSe Topological Insulator for Spintronic Devices 用于自旋电子器件的掺锰 HgSe 拓扑绝缘体的电子和光学特性

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-17 DOI: 10.1149/2162-8777/ad1f8f

Nour el houda Habibes, Abdelkader Boukortt, S. Meskine, Abdesamed Benbedra, Yousra Mamouni, H. Bennacer

{"title":"Electronic and Optical Properties of Mn-Doped HgSe Topological Insulator for Spintronic Devices","authors":"Nour el houda Habibes, Abdelkader Boukortt, S. Meskine, Abdesamed Benbedra, Yousra Mamouni, H. Bennacer","doi":"10.1149/2162-8777/ad1f8f","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1f8f","url":null,"abstract":"\u0000 HgSe is a mercury chalcogenide material of the HgX family (where X = S, Se, Te) which crystallises in the zincblende crystal phase. The electronic band structure of HgSe is indicative of a new state of matter in the condensed phase that is of great interest for fundamental physics and possibly new applications. This paper reports ab-initio calculations of the structural, electronic, magnetic, and optical properties of zincblende mercury selenide (HgSe) doped with manganese (Mn) in the inter sites HgMnxSe, with x = 0, 0.058, and 0.117, using the framework of spin-polarized density functional theory. The aim of our investigation is to discuss the different properties of this doped material in order to improve the promising new domain of spintronics with topological systems. Both the GGA+U+mBJ approach and spin-orbit coupling are used for band structure calculations and density of states. The results show a nontrivial topological semimetal order for HgSe and a ferromagnetic topological and metallic behaviour for HgMnxSe. The frequency response of optical properties shows interesting characteristics. Furthermore, the variation with concentration x of the critical point for each of the optical parameters is similar to that of the inverted band gap.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139617511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical, Dielectric, and Electromagnetic Microwave Absorption Properties of Hexagonal Ba3(VO4)2 六方 Ba3（VO4）2 的光学、介电和电磁微波吸收特性

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-15 DOI: 10.1149/2162-8777/ad1ed0

Praveen Chenna, Saran Srihari Sripada Panda, Sahil Sharma, S. Gandi, Sadi Reddy Parne

{"title":"Optical, Dielectric, and Electromagnetic Microwave Absorption Properties of Hexagonal Ba3(VO4)2","authors":"Praveen Chenna, Saran Srihari Sripada Panda, Sahil Sharma, S. Gandi, Sadi Reddy Parne","doi":"10.1149/2162-8777/ad1ed0","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1ed0","url":null,"abstract":"\u0000 We used a simple sol-gel synthesis technique to prepare hexagonal Ba3(VO4)2. X-ray diffraction (XRD), Fourier transform infrared (FTIR), and Raman spectroscopy were performed, confirming that Ba3(VO4)2 has a hexagonal structure. To investigate the influence of interfacial interactions at grain boundaries on microwave absorption, atomic force microscopy studies were performed. UV-Vis studies show the direct and indirect optical energy band gaps of Ba3(VO4)2 were determined as 3.81and 3.25 eV, respectively. The dielectric studies reveal that the dielectric constant (ε׳) of Ba3(VO4)2 ranges from 1.55 to 6.02 in the frequency range of 2-20 GHz, with an average ε׳ value of 3.84. The microwave absorption properties of Ba3(VO4)2 were evaluated in the frequency range of 8-18 GHz, covering the X and Ku bands at different thicknesses from 4.5 to 8 mm. The highest effective absorption bandwidth (EAB) of 4.44 GHz was observed within the frequency range of 12.83-17.27 GHz, with a maximum reflection loss of -71.43 dB at a resonance frequency of 15.05 GHz. Additionally, at a thickness of 7.5 mm, Ba3(VO4)2 achieved a maximum reflection loss of -75.22 dB at 10.03 GHz, with an EAB of 2.94 GHz (covering the X band from 8.57 GHz to 11.51 GHz).","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139620713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures 低温下熔淬 Ge2Sb2Te5 相变存储器线路电池的电阻漂移

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-10 DOI: 10.1149/2162-8777/ad2332

A. Talukder, Md Tashfiq Bin Kashem, R. Khan, F. Dirisaglik, A. Gokirmak, H. Silva

引用次数: 0

PVA/CdS-Ag Nanocomposites: Effect of Composition and UV Radiation on Optical, Electrical and Structural Properties PVA/CdS-Ag 纳米复合材料：成分和紫外线辐射对光学、电学和结构特性的影响

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-09 DOI: 10.1149/2162-8777/ad1c8b

Aditi Nain, Ekta Dhanda, R. Chahal, Sanjay Dahiya

引用次数: 0

Hydrogen Termination Effect on SiO2/Si Interface State Density in CH3O-Molecular-Ion-Implanted Silicon Epitaxial Wafer for CMOS Image Sensors 氢终止对用于 CMOS 图像传感器的 CH3O 分子离子注入硅外延片中 SiO2/Si 界面态密度的影响

ECS Journal of Solid State Science and Technology Pub Date : 2024-01-09 DOI: 10.1149/2162-8777/ad1c88

Ryosuke Okuyama, T. Kadono, Ayumi Onaka-Masada, Akihiro Suzuki, Koji Kobayashi, S. Shigematsu, R. Hirose, Yoshihiro Koga, K. Kurita

{"title":"Hydrogen Termination Effect on SiO2/Si Interface State Density in CH3O-Molecular-Ion-Implanted Silicon Epitaxial Wafer for CMOS Image Sensors","authors":"Ryosuke Okuyama, T. Kadono, Ayumi Onaka-Masada, Akihiro Suzuki, Koji Kobayashi, S. Shigematsu, R. Hirose, Yoshihiro Koga, K. Kurita","doi":"10.1149/2162-8777/ad1c88","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1c88","url":null,"abstract":"\u0000 The reduction in SiO2/Si interface state density (Dit) at the SiO2/Si interface region is important for improving the performance of complementary metal-oxide semiconductor (CMOS) image sensors. The CH3O-ion-implanted region stores hydrogen and releases the stored hydrogen during the subsequent heat treatment. This study demonstrates that a CH3O-ion-implanted epitaxial silicon wafer can reduce the Dit and Pb0 center density in SiO2/Si interface regions, as analyzed by quasi-static capacitance–voltage and electron spin resonance measurements, respectively. Both Dit and Pb0 center density in the CH3O-implanted wafer decreased with increasing heat treatment temperature. Moreover, the activation energy is estimated to be 1.57 eV for the hydrogen termination reactions induced by the CH3O-ion-implanted wafer. The activation energy is close to those of hydrogen molecules and Si dangling bonds at the SiO2/Si interface. The termination effect of the CH3O-molecular-ion-implanted epitaxial silicon wafers can contribute to the high electrical performance of CMOS image sensors.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139444806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0