{"title":"大型 AMOLED 显示屏无背板掩膜工艺研究","authors":"in young Chung, Guanghai Kim, Hyunsik Yoon","doi":"10.1149/2162-8777/ad1f90","DOIUrl":null,"url":null,"abstract":"\n In this work, the large AMOLED Display Backplane LTPS 5Mask PA method was studied. A storage cap was formed by doping boron on the poly Si under the GI cap in the contact hole process without using a storage cap doping mask. In the contact hole process, half-tone PR was used to simultaneously perform cap doping and TFT source drain open. Because half-tone PR must remain uniform to protect the cap lead-in end with GI uniformly within 8G Glass, photolithography PR process conditions with good half-tone uniformity were set up.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Study on the Large AMOLED Display Backplane-Less Mask Process\",\"authors\":\"in young Chung, Guanghai Kim, Hyunsik Yoon\",\"doi\":\"10.1149/2162-8777/ad1f90\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n In this work, the large AMOLED Display Backplane LTPS 5Mask PA method was studied. A storage cap was formed by doping boron on the poly Si under the GI cap in the contact hole process without using a storage cap doping mask. In the contact hole process, half-tone PR was used to simultaneously perform cap doping and TFT source drain open. Because half-tone PR must remain uniform to protect the cap lead-in end with GI uniformly within 8G Glass, photolithography PR process conditions with good half-tone uniformity were set up.\",\"PeriodicalId\":504734,\"journal\":{\"name\":\"ECS Journal of Solid State Science and Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-01-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS Journal of Solid State Science and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/2162-8777/ad1f90\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Journal of Solid State Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2162-8777/ad1f90","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
在这项工作中，研究了大型 AMOLED 显示器背板 LTPS 5Mask PA 方法。在接触孔工艺中，通过在 GI 盖下的多晶硅上掺杂硼来形成存储盖，而无需使用存储盖掺杂掩模。在接触孔工艺中，使用半色调 PR 同时进行盖掺杂和 TFT 源漏极开路。由于半色调 PR 必须保持均匀，以便在 8G 玻璃内均匀地保护带有 GI 的盖帽引出端，因此设置了具有良好半色调均匀性的光刻 PR 工艺条件。
A Study on the Large AMOLED Display Backplane-Less Mask Process
In this work, the large AMOLED Display Backplane LTPS 5Mask PA method was studied. A storage cap was formed by doping boron on the poly Si under the GI cap in the contact hole process without using a storage cap doping mask. In the contact hole process, half-tone PR was used to simultaneously perform cap doping and TFT source drain open. Because half-tone PR must remain uniform to protect the cap lead-in end with GI uniformly within 8G Glass, photolithography PR process conditions with good half-tone uniformity were set up.
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