用于低功耗应用的负电容源插座双栅极隧道场效应晶体管的电路级实现

K. M. C. Babu, Ekta Goel
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引用次数: 0

摘要

本手稿介绍了一项关于通过实施负电容源极袋双栅隧道场效应晶体管来提高模拟和射频性能的开创性研究。通过将铁电材料集成到栅极堆栈中,并在源极/沟道结附近引入一个完全耗尽的 n 型口袋,与现有文献相比,我们在导通电流 (ION)、开关比、次阈值摆幅 (SS) 等关键指标,以及跨导 (gm) 和截止频率 (fT) 等各种模拟/射频参数方面取得了显著提升。此外,我们还将分析扩展到逆变器和 5 级环形振荡器等电路级应用。我们的研究结果表明,在增益为 104 的情况下,逆变器的延迟时间为 1.09 ps,环形振荡器的工作频率为 500 GHz。这些结果将所提出的器件定位为高速、低功耗应用的理想候选器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Circuit Level Implementation of Negative Capacitance Source Pocket Double Gate Tunnel FET for Low Power Applications
This manuscript presents a pioneering study on enhancing analog and radio frequency performance through the implementation of negative capacitance source pocket double gate tunnel field-effect transistor. By integrating a ferroelectric material into the gate stack and introducing a fully depleted n-type pocket near the source/channel junction, we achieved significant enhancements in key metrics such as ON current (ION), switching ratio, subthreshold swing (SS), and various analog/RF parameters like transconductance (gm), cutoff frequency (fT) when compared to existing literature. Additionally, we extend our analysis to circuit-level applications such as inverter and 5-stage ring oscillator. Our findings reveal an impressive inverter delay of 1.09 ps with a gain of 104, as well as a ring oscillator operating at a frequency of 500 GHz. These results position the proposed device as an ideal candidate for high-speed, low-power applications.
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