The Dependence on Temperature of the Mn4+ Emission Intensity and Lifetime in Na2SiF6

William Beers, Mikhail Brik, Chong-Geng Ma, Willian E. Cohen, Alok Srivastava
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Abstract

We have measured the dependence of the Mn4+ lifetime and intensity on temperature of commercial Na2SiF6: Mn4+ phosphor. The data are fitted to existing physical models to extract the activation energy for thermal quenching. The parameters of our fitting are compared with those reported for laboratory synthesized Na2SiF6:Mn4+ and commercial K2SiF6:Mn4+ phosphors that is sold under the trade name, TriGain®. This comparative analysis sheds light on the mechanism of thermal quenching of the Mn4+ ion luminescence in M2SiF6 (M=K, Na) compounds. We show that the activation energy and the onset temperature of thermal quenching for the 2E 4T2 4A2 crossover process is correlated with the energy of the 4T2 level and argue that this is a robust electronic structure-property relationship in fluoride hosts with low defect density. The study provides, therefore, an understanding of the factors responsible for non-radiative relaxation processes, which is fundamental to the understanding of phosphor quantum efficiency and performance.
Na2SiF6 中 Mn4+ 发射强度和寿命与温度的关系
我们测量了商用 Na2SiF6: Mn4+ 荧光粉的 Mn4+ 寿命和强度与温度的关系。我们将这些数据与现有的物理模型进行了拟合,以提取热淬火的活化能。我们的拟合参数与实验室合成的 Na2SiF6:Mn4+ 和以 TriGain® 商标名销售的商用 K2SiF6:Mn4+ 荧光粉的拟合参数进行了比较。这项比较分析揭示了 M2SiF6(M=K、Na)化合物中 Mn4+ 离子发光的热淬灭机制。我们的研究表明,2E 4T2 4A2 交叉过程的活化能和热淬灭的起始温度与 4T2 电平的能量相关,并认为这是低缺陷密度氟化物宿主中一种稳健的电子结构-性质关系。因此,这项研究提供了对造成非辐射弛豫过程的因素的理解,这对理解荧光粉的量子效率和性能至关重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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