Journal of Applied Physics最新文献_第8页

Substrate dependence of the self-heating in lead zirconate titanate (PZT) MEMS actuators 锆钛酸铅（PZT）微机电致动器的自热与基底的关系

Journal of Applied Physics Pub Date : 2024-04-23 DOI: 10.1063/5.0204385

Yiwen Song, Kyuhwe Kang, P. Tipsawat, Christopher Y. Cheng, Wanlin Zhu, Michael LaBella, Sukwon Choi, Susan E. Trolier-McKinstry

{"title":"Substrate dependence of the self-heating in lead zirconate titanate (PZT) MEMS actuators","authors":"Yiwen Song, Kyuhwe Kang, P. Tipsawat, Christopher Y. Cheng, Wanlin Zhu, Michael LaBella, Sukwon Choi, Susan E. Trolier-McKinstry","doi":"10.1063/5.0204385","DOIUrl":"https://doi.org/10.1063/5.0204385","url":null,"abstract":"Lead zirconate titanate (PZT) thin films offer advantages in microelectromechanical systems (MEMSs) including large motion, lower drive voltage, and high energy densities. Depending on the application, different substrates are sometimes required. Self-heating occurs in the PZT MEMS due to the energy loss from domain wall motion, which can degrade the device performance and reliability. In this work, the self-heating of PZT thin films on Si and glass and a film released from a substrate were investigated to understand the effect of substrates on the device temperature rise. Nano-particle assisted Raman thermometry was employed to quantify the operational temperature rise of these PZT actuators. The results were validated using a finite element thermal model, where the volumetric heat generation was experimentally determined from the hysteresis loss. While the volumetric heat generation of the PZT films on different substrates was similar, the PZT films on the Si substrate showed a minimal temperature rise due to the effective heat dissipation through the high thermal conductivity substrate. The temperature rise on the released structure is 6.8× higher than that on the glass substrates due to the absence of vertical heat dissipation. The experimental and modeling results show that the thin layer of residual Si remaining after etching plays a crucial role in mitigating the effect of device self-heating. The outcomes of this study suggest that high thermal conductivity passive elastic layers can be used as an effective thermal management solution for PZT-based MEMS actuators.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140668927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Rapid subsurface analysis of frequency-domain thermoreflectance images with K-means clustering 利用 K-means 聚类对频域热反射图像进行快速地表下分析

Journal of Applied Physics Pub Date : 2024-04-22 DOI: 10.1063/5.0201473

Amun Jarzembski, Zachary T. Piontkowski, Wyatt Hodges, Matthew Bahr, Anthony McDonald, William Delmas, Gregory Pickrell, L. Yates

{"title":"Rapid subsurface analysis of frequency-domain thermoreflectance images with K-means clustering","authors":"Amun Jarzembski, Zachary T. Piontkowski, Wyatt Hodges, Matthew Bahr, Anthony McDonald, William Delmas, Gregory Pickrell, L. Yates","doi":"10.1063/5.0201473","DOIUrl":"https://doi.org/10.1063/5.0201473","url":null,"abstract":"K-means clustering analysis is applied to frequency-domain thermoreflectance (FDTR) hyperspectral image data to rapidly screen the spatial distribution of thermophysical properties at material interfaces. Performing FDTR while raster scanning a sample consisting of 8.6 μm of doped-silicon (Si) bonded to a doped-Si substrate identifies spatial variation in the subsurface bond quality. Routine thermal analysis at select pixels quantifies this variation in bond quality and allows assignment of bonded, partially bonded, and unbonded regions. Performing this same routine thermal analysis across the entire map, however, becomes too computationally demanding for rapid screening of bond quality. To address this, K-means clustering was used to reduce the dimensionality of the dataset from more than 20 000 pixel spectra to just K=3 component spectra. The three component spectra were then used to express every pixel in the image through a least-squares minimized linear combination providing continuous interpolation between the components across spatially varying features, e.g., bonded to unbonded transition regions. Fitting the component spectra to the thermal model, thermal properties for each K cluster are extracted and then distributed according to the weighting established by the regressed linear combination. Thermophysical property maps are then constructed and capture significant variation in bond quality over 25 μm length scales. The use of K-means clustering to achieve these thermal property maps results in a 74-fold speed improvement over explicit fitting of every pixel.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140674213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Conduction-band engineering of polar nitride semiconductors with wurtzite ScAlN for near-infrared photonic devices 极性氮化物半导体的传导带工程与用于近红外光子器件的晶格ScAlN

Journal of Applied Physics Pub Date : 2024-04-22 DOI: 10.1063/5.0195021

Govardan Gopakumar, Z. Abdin, Rajendra Kumar, Brandon Dzuba, Trang Nguyen, M. J. Manfra, O. Malis

引用次数: 0

Nickel–silicon interfacial adhesion strength measured by laser spallation 通过激光溅射测量镍硅界面粘附强度

Journal of Applied Physics Pub Date : 2024-04-22 DOI: 10.1063/5.0198331

Xiao Yan, Jacob M. Diamond, Nathan J. Fritz, Satoshi Matsuo, K. F. Rabbi, Ishrat Zarin, Nenad Miljkovic, P. V. Braun, N. Sottos

{"title":"Nickel–silicon interfacial adhesion strength measured by laser spallation","authors":"Xiao Yan, Jacob M. Diamond, Nathan J. Fritz, Satoshi Matsuo, K. F. Rabbi, Ishrat Zarin, Nenad Miljkovic, P. V. Braun, N. Sottos","doi":"10.1063/5.0198331","DOIUrl":"https://doi.org/10.1063/5.0198331","url":null,"abstract":"Thin films of amorphous silicon (a-Si) coated on metals such as nickel (Ni) are one of the most promising anode architectures for high-energy-density lithium-ion (Li-ion) batteries. The performance and longevity of batteries with this type of electrode depend on the integrity of the Ni/a–Si interface. The integrity of the a-Si /Ni bonded interface during cycling is critical, but the experimental characterization of interfacial failure of this material system is highly challenging and there is a sparsity of interface strength data in the literature. Here, we describe a laser spallation (LS) technique to characterize the interfacial adhesion strength of Ni/a–Si multilayer films created by chemical vapor deposition (CVD). The LS technique enables the non-contact measurement of the tensile interfacial strength with high precision when compared to conventional methods for characterizing adhesion. Interferometric measurement combined with finite element analysis shows that the Ni/a–Si interface, created via the CVD of a-Si on Ni surfaces can withstand ≈46–72 MPa in tension before failure initiation. To ensure successful and precise characterization of interfacial adhesion strength using LS, we further develop a design criterion for multi-layer samples by analyzing the thin-film mechanics. Our study provides insights into the strength of the Ni/a–Si interface that governs the performance and durability of high-energy-density anodes and offers design guidelines for improving thin-film electrode integrity.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140673624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interaction between water and point defects inside volume-constrained α-quartz: An ab initio molecular dynamics study at 300 K 体积受限的α-石英内部水与点缺陷之间的相互作用：300 K条件下的ab initio分子动力学研究

Journal of Applied Physics Pub Date : 2024-04-22 DOI: 10.1063/5.0190356

D. Choudhuri, Alex J. Rinehart

{"title":"Interaction between water and point defects inside volume-constrained α-quartz: An ab initio molecular dynamics study at 300 K","authors":"D. Choudhuri, Alex J. Rinehart","doi":"10.1063/5.0190356","DOIUrl":"https://doi.org/10.1063/5.0190356","url":null,"abstract":"Quartz-based minerals in earth’s crust are well-known to contain water-related defects within their volume-constrained lattice, and they are responsible for strength-loss. Experimental observations of natural α-quartz indicate that such defects appear as hydroxyl groups attached to Si atoms, called Griggs defect (Si-OH), and molecular water (H2O) located at the interstitial sites. However, factors contributing to the formation of Griggs and interstitial H2O defects remain unclear. For example, the role of point defects like vacancy sites (O2− and Si4+), and substitutional (Al3+) and interstitial (Li+, K+, Ca2+, Mg2+, etc.) ions has remained largely unexplored. Here, we performed ab initio molecular dynamics at 300 K to examine the energetics and structure of water-related defects in volume-constrained α-quartz. Several configurations were systematically interrogated by incorporating interstitial H2O, O2− and Si4+ vacancies, substitutional Al3+, and interstitial Li+, Ca2+ and Mg2+ ions within α-quartz. Interstitial H2O defect was found to be energetically favorable in the presence of Substitutional Al3+, and interstitial Ca2+, Mg2+, and Li1+. In the presence of O2− and Si4+ vacancies, H2O showed a strong tendency to dissociate into OH—to form Griggs defect—and a proton; even in the presence of substitutional and interstitial ions. These ions distorted the α-quartz lattice and, in the extreme case, disrupted long-range order to form local amorphous domains; consistent with experimental reports. Our study provides an initial framework for understanding the impact of water within the crystal lattice of an anhydrous silicate mineral such as quartz. We provide not only thermodynamic and process-related information on observed defects, but also provides guidelines for future studies of water’s impact on the behavior of silicate minerals.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140677177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of phase transition on the piezoelectric properties of scandium-alloyed gallium nitride 相变对钪合金氮化镓压电特性的影响

Journal of Applied Physics Pub Date : 2024-04-22 DOI: 10.1063/5.0191816

K. Hirata, Yu Ikemoto, Masato Uehara, Hiroshi Yamada, S. A. Anggraini, M. Akiyama

{"title":"Effect of phase transition on the piezoelectric properties of scandium-alloyed gallium nitride","authors":"K. Hirata, Yu Ikemoto, Masato Uehara, Hiroshi Yamada, S. A. Anggraini, M. Akiyama","doi":"10.1063/5.0191816","DOIUrl":"https://doi.org/10.1063/5.0191816","url":null,"abstract":"In this study, the piezoelectric properties of scandium-alloyed gallium nitride (ScGaN), which is expected to be applied to microelectromechanical systems devices, are evaluated by first-principles calculations. The piezoelectric constant (d33) of GaN is found to increase by up to approximately 30 times upon the addition of 62.5 mol. % of Sc. The piezoelectric stress constant (e33) increases and the elastic constant (C33) decreases with increasing Sc content of ScGaN, driving the rise of d33. The improved piezoelectric properties of ScGaN compared with those of GaN are largely attributed to elastic softening, which is thought to be related to the transition from a wurtzite to hexagonal boron nitride (h-BN) structure driven by the change in bonding states between atoms caused by the addition of Sc to GaN. The crystal orbital Hamilton population analysis suggests that addition of Sc to GaN results in the combination of weaker Sc–N and Ga–N bonding, which makes the crystal structure unstable. This weakened bonding is thought to be the main cause of the destabilization of the wurtzite structure and transition to the h-BN structure of ScGaN. The elastic softening associated with this structural transition leads to the dramatic improvement in piezoelectric properties.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140673078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Measurement and modeling of strain waves in germanium induced by ultrafast laser pulses 超快激光脉冲诱导的锗应变波的测量与建模

Journal of Applied Physics Pub Date : 2024-04-22 DOI: 10.1063/5.0197957

Martin Aagaard, Brian Julsgaard

引用次数: 0

Noncollinear electro-optic detection of terahertz waves: Advantages and limitations 太赫兹波的非共轭电光探测：优势和局限性

Journal of Applied Physics Pub Date : 2024-04-22 DOI: 10.1063/5.0206493

M. Kurnikov, M. Bakunov

引用次数: 0

Predicted thermophysical properties of UN, PuN, and (U,Pu)N UN、PuN 和 (U,Pu)N 的预测热物理性质

Journal of Applied Physics Pub Date : 2024-04-22 DOI: 10.1063/5.0177315

C. Galvin, N. Kuganathan, N. J. Barron, R. W. Grimes

引用次数: 0

Thermal cycle stability and microstructure of Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals Pb(Mg1/3Nb2/3)O3-PbTiO3 单晶的热循环稳定性和微观结构

Journal of Applied Physics Pub Date : 2024-04-22 DOI: 10.1063/5.0197826

Min Liang, Ruibin Xiong, Shuli Chen, Zujian Wang, B. Su, Rongbin Su, Ying Liu, Chao He

{"title":"Thermal cycle stability and microstructure of Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals","authors":"Min Liang, Ruibin Xiong, Shuli Chen, Zujian Wang, B. Su, Rongbin Su, Ying Liu, Chao He","doi":"10.1063/5.0197826","DOIUrl":"https://doi.org/10.1063/5.0197826","url":null,"abstract":"The Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) ferroelectric single crystals have been commercially available as important components in medical ultrasound transducers due to their excellent piezoelectric and electromechanical coupling performance. The variation in piezoelectric and dielectric properties of PMN-PT single crystals with ambient temperature is an important application indicator. In this work, the PMN-PT single crystals after direct current poling (DCP) and alternating current poling (ACP) were subjected to the cyclic thermal treatment process. The thermal cycling stability and microstructural changes in PMN-PT single crystals were investigated. The ACP single crystals exhibit a higher dielectric constant ε33T/ε0 (6500–7600) and piezoelectric coefficient d33 (2100–2500 pC N−1) compared to the DCP single crystals (ε33T/ε0 of 4100–5000, d33 of 1200–1300 pC N−1). Under thermal cycling at 60 °C, the DCP and ACP single crystals exhibit good thermal cycling stability after 150 cycles. Microstructural observations show that the domain structure of the DCP single crystals exhibits “staggered domain walls, inhomogeneous domain size, variety of domain structure,” while the relatively homogeneous stripe-like domains were observed in the ACP single crystals. After thermal cycling, new fine striped domains appear in both the DCP and ACP single crystals due to the instability of rotated polarization, but the piezoelectric and dielectric properties are not greatly affected. This work provides an intensive understanding of the effects of thermal cycling on the domain structure, which is useful for applications.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140672311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0