Journal of Applied Physics最新文献

Observation of transient aspects of self-sustained oscillations and the role of parallel capacitance in VO2-based planar devices 观察自持振荡的瞬态特性以及基于 VO2 的平面器件中并联电容的作用

Journal of Applied Physics Pub Date : 2024-08-09 DOI: 10.1063/5.0211327

Junpei Kidokoro, Md. Suruz Mian, Lamisa Hoque, Peng Yu, K. Okimura, Toshihiro Nakanishi

{"title":"Observation of transient aspects of self-sustained oscillations and the role of parallel capacitance in VO2-based planar devices","authors":"Junpei Kidokoro, Md. Suruz Mian, Lamisa Hoque, Peng Yu, K. Okimura, Toshihiro Nakanishi","doi":"10.1063/5.0211327","DOIUrl":"https://doi.org/10.1063/5.0211327","url":null,"abstract":"Self-sustained electrical oscillations (SEOs) in VO2 films have attracted considerable attention owing to their potential to emulate spiking pulses in neuromorphic circuits. However, triggering stable SEOs and the controlling oscillation frequency remain challenging because the details of circuit operation with VO2-based devices are not yet well understood. In this study, we propose a method to observe SEOs stably in a VO2-based planar device with Au/Ti facing electrodes by introducing a 50 Hz sinusoidal voltage from a curve tracer. The transient aspects, including the onset and collapse of the SEO, were captured, providing clarity on the oscillation frequency range and circuit conditions for the SEOs, which are closely correlated with the device temperature. It became clear that the parallel capacitance not only determined the oscillation frequency but also controlled the current through VO2 just after the insulator–metal transition of VO2, playing a role in triggering stable oscillations. We also successfully observed the transient aspects from in-phase to anti-phase synchronized oscillations in the coupled oscillations. This study advances the experimental procedures and applications of SEOs in VO2-based planar devices.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141923699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gallium oxide semiconductor-based large volume ultrafast radiation hard spectroscopic scintillators 基于氧化镓半导体的大体积超快辐射硬光谱闪烁体

Journal of Applied Physics Pub Date : 2024-08-09 DOI: 10.1063/5.0219987

A. Datta, H. Mei, A. Lebedinsky, P. Halasyamani, S. Motakef

{"title":"Gallium oxide semiconductor-based large volume ultrafast radiation hard spectroscopic scintillators","authors":"A. Datta, H. Mei, A. Lebedinsky, P. Halasyamani, S. Motakef","doi":"10.1063/5.0219987","DOIUrl":"https://doi.org/10.1063/5.0219987","url":null,"abstract":"We report on the development of the first-ever inorganic radiation-hard moisture-insensitive large volume spectroscopic semiconductor-based scintillator with less than 2 ns decay time and light yields as high as 8000 ph/MeV. Despite extensive research into scintillator materials, the quest for an ideal scintillator combining ultrafast decay times (akin to BaF2 and Yb-doped scintillators such as Lu2O3:Yb), high light yields (exceeding 2000 photons per MeV), spectroscopic capabilities, and exceptional radiation hardness remain unfulfilled. In this study, we demonstrate and report for the first time the viability of large-volume (up to 20 mm thickness) gallium oxide (β-Ga2O3) semiconductor-based scintillators for applications requiring these properties. These β-Ga2O3 scintillators were grown using the fast turnaround (∼2 days) crucible-free optical float zone (FZ) technique. The high light yield and ultrafast decay time of these high-purity n-type semiconductors with free carrier concentration of 6 × 1017 cm−3 are attributed to native defects, specifically oxygen vacancies (VO) and gallium–oxygen vacancy pairs (VGa–VO), generated during optimized FZ growth. The ultrafast decay, along with high light yield, enables excellent timing resolution and high count rate detection for applications like time-of-flight positron emission tomography, physics experiments, and nuclear safety. The radiation hardness of these devices has been documented in a separate publication.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141922768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrical activation of insulator-to-metal transition in vanadium dioxide single-crystal nanobeam and their high-frequency switching performances 二氧化钒单晶纳米束中绝缘体到金属转变的电激活及其高频开关性能

Journal of Applied Physics Pub Date : 2024-08-09 DOI: 10.1063/5.0221152

J. Orlianges, O. Allegret, E. Sirjita, A. Masson, A. Boulle, V. Théry, S. Tardif, J. S. Micha, A. Crunteanu

引用次数: 0

Simulation of Kitaev chain using one-dimensional chain of superconducting qubits and environmental effects on topological states 利用一维超导量子比特链模拟基塔耶夫链以及环境对拓扑状态的影响

Journal of Applied Physics Pub Date : 2024-08-09 DOI: 10.1063/5.0224271

Yang Zhang, Yun-Qiu Ge, Yu-xi Liu

引用次数: 0

Optical properties of ZnO nanocrystals under photo-induced electron doping 光诱导电子掺杂下氧化锌纳米晶体的光学特性

Journal of Applied Physics Pub Date : 2024-08-09 DOI: 10.1063/5.0219897

Sekika Yamamoto, Tenta Ushida

引用次数: 0

Deep learning-based characterization of ion implantation parameters for photo modulated optical reflectance 基于深度学习的光调制光学反射离子注入参数表征

Journal of Applied Physics Pub Date : 2024-08-09 DOI: 10.1063/5.0210816

Xuesong Wang, Lijun Zhang, Yong Sun, Jing Min, Zhongyu Wang, Shiyuan Liu, Xiuguo Chen, Zirong Tang

{"title":"Deep learning-based characterization of ion implantation parameters for photo modulated optical reflectance","authors":"Xuesong Wang, Lijun Zhang, Yong Sun, Jing Min, Zhongyu Wang, Shiyuan Liu, Xiuguo Chen, Zirong Tang","doi":"10.1063/5.0210816","DOIUrl":"https://doi.org/10.1063/5.0210816","url":null,"abstract":"Photo modulated optical reflectance (PMOR) is an ideal ultra-shallow junction area metrology technique for measurement of transistor dopant distribution in integrated circuit fabrication, and the characterization of process parameters such as implant energy, implant angle, and implant dose has a significant impact on the accuracy of the ion implantation process. This study utilized deep learning to analyze various process parameters concurrently and assessed its performance on boron-doped silicon samples, the data were obtained from the power curves measured from Carrier Illumination (CI) experiments in PMOR, a deep learning model with multi-task learning architecture was developed and trained to characterize multiple process parameters, and the PMOR model incorporating a multi-task learning architecture for process parameters demonstrated superior performance in terms of accuracy and speed of characterization. The analyses indicated that applying deep learning methods to CI metrology in PMOR technology is feasible. In particular, compared with the conventional carrier irradiation technique, the ability to obtain the implantation dose and doping profile along with other process parameters such as implantation energy, implantation angle, and implantation type can better assist in the accurate realization of the ion implantation process with acceptable accuracy and time cost.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141925207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tailoring band structures and photocatalytic overall water splitting in a two-dimensional GaN/black phosphorus heterojunction: First-principles calculations 二维氮化镓/黑磷异质结中的定制能带结构和光催化整体水分离：第一原理计算

Journal of Applied Physics Pub Date : 2024-08-09 DOI: 10.1063/5.0218663

Xiaodong Hao, Qiheng Ma, Xishuo Zhang, Jiahui Wang, Deqiang Yin, Shufang Ma, Bingshe Xu

{"title":"Tailoring band structures and photocatalytic overall water splitting in a two-dimensional GaN/black phosphorus heterojunction: First-principles calculations","authors":"Xiaodong Hao, Qiheng Ma, Xishuo Zhang, Jiahui Wang, Deqiang Yin, Shufang Ma, Bingshe Xu","doi":"10.1063/5.0218663","DOIUrl":"https://doi.org/10.1063/5.0218663","url":null,"abstract":"This study investigates the impact of biaxial strain on monolayer black phosphorus (BP) through first-principles calculations, confirming its stability and subsequently modifying its photocatalytic performance. Under biaxial strain, BP exhibits a direct bandgap suitable for photocatalytic hydrogen production during water splitting, albeit with limitations due to its valence band maximum edge. A distinctive GaN/BP heterojunction is proposed, featuring a direct bandgap and advantageous band edge positions conducive to efficient photocatalytic overall water splitting. Under the influence of biaxial strain, the heterojunction type undergoes a transition from direct type-I to direct type-II and Z, augmenting the separation of photoexcited electrons and holes and markedly enhancing the efficiency of photocatalytic hydrogen production. Furthermore, the heterojunction exhibits commendable capabilities in absorbing visible light. This research provides a promising avenue to surmount the constraints associated with monolayer BP in photocatalysis, offering valuable insights for the development of efficient photocatalytic materials.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141924555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of grain boundary segregation of rare earth element on deformation behavior of Mg alloys 稀土元素的晶界偏析对镁合金变形行为的影响

Journal of Applied Physics Pub Date : 2024-08-09 DOI: 10.1063/5.0219468

S. Li, H. Y. Song

{"title":"Effect of grain boundary segregation of rare earth element on deformation behavior of Mg alloys","authors":"S. Li, H. Y. Song","doi":"10.1063/5.0219468","DOIUrl":"https://doi.org/10.1063/5.0219468","url":null,"abstract":"Alloying with rare earth (RE) elements is an effective way to improve the mechanical properties of the Mg alloys. However, the strengthening mechanism of RE element Y on the Mg alloys still needs to be further revealed. The effect of grain boundary (GB) segregation of RE element Y on the mechanical properties and the GB stability of the Mg alloys are investigated by the molecular dynamics simulation method. The results show that the GB segregation of Y atoms can significantly increase the yield strength and GB stability of the Mg alloys. The higher the content of Y atoms at the GB, the stronger the stability of the GB and the higher the strength of the alloys. The results also show that the GBs thicken significantly with increasing Y content at the GBs, which is attributed to the diffusion of Y atoms, leading to the solid-state amorphization of the Mg alloys. The results indicate that with the increase of Y content at the GBs, the Mg alloys undergo a transition from the plastic deformation dominated by the co-sliding of GBs and dislocations to the slip of dislocations only. This work provides a theoretical basis for the design and preparation of high-performance Mg alloys.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141924123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Erratum: “Toolbox for modeling frequency-domain photothermal experiments on multilayers” [J. Appl. Phys. 131, 214502 (2022)] 更正："多层板频域光热实验建模工具箱" [J. Appl. Phys. 131, 214502 (2022)]

Journal of Applied Physics Pub Date : 2024-08-08 DOI: 10.1063/5.0226438

M. Chirtoc, N. Horny

引用次数: 0

Comprehensive study of interface state via the time-dependent second harmonic generation 通过随时间变化的二次谐波生成全面研究界面状态

Journal of Applied Physics Pub Date : 2024-08-08 DOI: 10.1063/5.0188344

Libo Zhang, Li Ye, Weiwei Zhao, Chongji Huang, Tao Li, Tai Min, Jinbo Yang, Mingliang Tian, Xuegang Chen

引用次数: 0