Comprehensive study of interface state via the time-dependent second harmonic generation

Libo Zhang, Li Ye, Weiwei Zhao, Chongji Huang, Tao Li, Tai Min, Jinbo Yang, Mingliang Tian, Xuegang Chen
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Abstract

Electric field induced time-dependent second harmonic generation (TD-SHG) is an emerging sensitive and non-contact method for qualitatively/quantitatively probing semiconductor parameters. The TD-SHG signal is related to the evolution of the built-in electric field due to laser-induced electron generation and transportation. Here, we conducted a comprehensive study of fixed charge density (Qox) and interface state density (Dit) using the conventional conductance method to compare them with the SHG signal from TD-SHG. The extracted Qox is around 2.49 × 1010 cm−2 regardless of SiO2 thickness, corresponding to the constant SHG intensity at the minimum of TD-SHG. The extracted Dit linearly decreases with the SiO2 thickness, which is related to the linear change of extracted time constant from TD-SHG. Therefore, the TD-SHG, being a sensitive and non-contact method as well as simple and fast, can serve as an alternative approach to test the semiconductor parameters, which may facilitate semiconductor testing.
通过随时间变化的二次谐波生成全面研究界面状态
电场诱导的时变二次谐波发生(TD-SHG)是一种新兴的灵敏、非接触式方法,用于定性/定量探测半导体参数。TD-SHG 信号与激光诱导电子产生和传输导致的内置电场演变有关。在此,我们采用传统的电导法对固定电荷密度(Qox)和界面态密度(Dit)进行了全面研究,并与 TD-SHG 的 SHG 信号进行了比较。提取的 Qox 约为 2.49 × 1010 cm-2,与二氧化硅厚度无关,对应于 TD-SHG 最小值处的恒定 SHG 强度。提取的 Dit 随 SiO2 厚度的增加而线性减小,这与 TD-SHG 提取时间常数的线性变化有关。因此,TD-SHG 是一种灵敏、非接触、简单、快速的方法,可以作为测试半导体参数的替代方法,为半导体测试提供便利。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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