Gallium oxide semiconductor-based large volume ultrafast radiation hard spectroscopic scintillators

A. Datta, H. Mei, A. Lebedinsky, P. Halasyamani, S. Motakef
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Abstract

We report on the development of the first-ever inorganic radiation-hard moisture-insensitive large volume spectroscopic semiconductor-based scintillator with less than 2 ns decay time and light yields as high as 8000 ph/MeV. Despite extensive research into scintillator materials, the quest for an ideal scintillator combining ultrafast decay times (akin to BaF2 and Yb-doped scintillators such as Lu2O3:Yb), high light yields (exceeding 2000 photons per MeV), spectroscopic capabilities, and exceptional radiation hardness remain unfulfilled. In this study, we demonstrate and report for the first time the viability of large-volume (up to 20 mm thickness) gallium oxide (β-Ga2O3) semiconductor-based scintillators for applications requiring these properties. These β-Ga2O3 scintillators were grown using the fast turnaround (∼2 days) crucible-free optical float zone (FZ) technique. The high light yield and ultrafast decay time of these high-purity n-type semiconductors with free carrier concentration of 6 × 1017 cm−3 are attributed to native defects, specifically oxygen vacancies (VO) and gallium–oxygen vacancy pairs (VGa–VO), generated during optimized FZ growth. The ultrafast decay, along with high light yield, enables excellent timing resolution and high count rate detection for applications like time-of-flight positron emission tomography, physics experiments, and nuclear safety. The radiation hardness of these devices has been documented in a separate publication.
基于氧化镓半导体的大体积超快辐射硬光谱闪烁体
我们报告了有史以来首次开发出衰变时间小于 2 ns、光产率高达 8000 ph/MeV 的无机辐射硬湿敏大体积光谱半导体闪烁体的情况。尽管对闪烁体材料进行了广泛的研究,但人们仍在寻求一种理想的闪烁体,这种闪烁体应具有超快衰变时间(类似于 BaF2 和掺镱闪烁体,如 Lu2O3:Yb)、高光产率(超过 2000 光子/MeV)、光谱能力和优异的辐射硬度。在本研究中,我们首次展示并报告了大体积(厚度达 20 毫米)氧化镓(β-Ga2O3)半导体闪烁体在需要这些特性的应用中的可行性。这些 β-Ga2O3 闪烁器是利用快速周转(2 天)无坩埚光学浮区(FZ)技术生长的。这些自由载流子浓度为 6 × 1017 cm-3 的高纯度 n 型半导体的高光产率和超快衰减时间归因于优化 FZ 生长过程中产生的原生缺陷,特别是氧空位(VO)和镓氧空位对(VGa-VO)。这种超快衰变和高光产率为飞行时间正电子发射断层扫描、物理实验和核安全等应用提供了出色的时间分辨率和高计数率检测。这些设备的辐射硬度已在另一份出版物中进行了记录。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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