极性氮化物半导体的传导带工程与用于近红外光子器件的晶格ScAlN

Govardan Gopakumar, Z. Abdin, Rajendra Kumar, Brandon Dzuba, Trang Nguyen, M. J. Manfra, O. Malis
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引用次数: 0

摘要

通过分子束外延在 c 平面氮化镓上生长出的沃特兹ScxAl1-xN/GaN (x = 0.13-0.18)多量子阱在具有重要技术意义的 1.8-2.4 μm 范围内表现出明显的强而窄的近红外带间吸收。带状结构模拟显示,对于宽于 3 nm 的氮化镓阱,量子化能量是由本征极化场导致的导带陡峭三角剖面设定的。因此,带间跃迁能量提供了独特而直接的 ScAlN 基本极化参数。测量到的红外吸收表明,假定晶格匹配的 Sc0.18Al0.82N/GaN 异质结构的自发极化差小于理论计算值。带间跃迁能对势垒合金成分相对不敏感,这表明在所探究的 0.13-0.18 Sc 成分范围内,净极化场的变化可以忽略不计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Conduction-band engineering of polar nitride semiconductors with wurtzite ScAlN for near-infrared photonic devices
Wurtzite ScxAl1−xN/GaN (x = 0.13–0.18) multi-quantum wells grown by molecular beam epitaxy on c-plane GaN are found to exhibit remarkably strong and narrow near-infrared intersubband absorption in the technologically important 1.8–2.4 μm range. Band structure simulations reveal that, for GaN wells wider than 3 nm, the quantized energies are set by the steep triangular profile of the conduction band caused by intrinsic polarization fields. As a result, the intersubband transition energies provide unique and direct access to essential ScAlN polarization parameters. Measured infrared absorption indicates that the spontaneous polarization difference of the presumed lattice-matched Sc0.18Al0.82N/GaN heterostructure is smaller than the theoretically calculated value. The intersubband transition energies are relatively insensitive to the barrier alloy composition indicating negligible variation of the net polarization field in the probed 0.13–0.18 Sc composition range.
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