arXiv - PHYS - Applied Physics最新文献_第6页

Determination of dynamic flow stress equation based on discrete experimental data: Part 1 Methodology and the dependence of dynamic flow stress on strain-rate 根据离散实验数据确定动态流动应力方程：第 1 部分方法和动态流动应力与应变速率的关系

arXiv - PHYS - Applied Physics Pub Date : 2024-09-07 DOI: arxiv-2409.04697

Xianglin Huang, Q. M. Li

{"title":"Determination of dynamic flow stress equation based on discrete experimental data: Part 1 Methodology and the dependence of dynamic flow stress on strain-rate","authors":"Xianglin Huang, Q. M. Li","doi":"arxiv-2409.04697","DOIUrl":"https://doi.org/arxiv-2409.04697","url":null,"abstract":"In this study, a framework to determine the dynamic flow stress equation of\u0000materials based on discrete data of varied (or instantaneous) strain-rate from\u0000split Hopkinson pressure bar (SHPB) experiments is proposed. The conventional\u0000constant strain-rate requirement in SHPB test is purposely relaxed to generate\u0000rich dynamic flow stress data which are widely and diversely distributed in\u0000plastic strain and strain-rate space. Two groups of independent SHPB tests,\u0000i.e. Group A (without shaper) and Group B (with shaper) were conducted on the\u0000C54400 phosphor-bronze copper alloy at room temperature, obtaining flow stress\u0000data (FSD) (two-dimensional (2D) matrix). Data qualification criteria were\u0000proposed to screen the FSD, with which qualified FSD were obtained. The\u0000qualified FSD of Group A were coarsely filled with missing data and were\u0000reconstructed by the Artificial Neural Network (ANN). As a result,\u0000finely-filled FSD of Group A were obtained, which were carefully evaluated by\u0000the qualified FSD of Group B. The evaluation proves the effectiveness of ANN in\u0000FSD prediction. Next, the finely-filled FSD from Group A were decomposed by\u0000Singular Value Decomposition (SVD) method. Discrete and analytical flow stress\u0000equation f(strain, strain-rate)_ana were obtained from the SVD results.\u0000Finally, flow stress equation (f(strain, strain-rate)_MJC) based on\u0000conventional method were established. Five uncertainties inherent in the\u0000conventional method in the determination of the flow stress equation were\u0000identified. The comparison between f(strain, strain-rate)_ana and f(strain,\u0000strain-rate)_MJC demonstrated the effectiveness and reliability of the flow\u0000stress equation obtained from the proposed method.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142177779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly polarized single photon emitter from intrinsic localized excitons in a WSe2/CrSBr heterostructure WSe2/CrSBr 异质结构中的固有局域激子产生的高偏振单光子发射器

arXiv - PHYS - Applied Physics Pub Date : 2024-09-07 DOI: arxiv-2409.04749

Varghese Alapatt, Francisco Marques-Moros, Carla Boix-Constant, Samuel Manas-Valero, Kirill Bolotin, Josep Canet-Ferrer, Eugenio Coronado

{"title":"Highly polarized single photon emitter from intrinsic localized excitons in a WSe2/CrSBr heterostructure","authors":"Varghese Alapatt, Francisco Marques-Moros, Carla Boix-Constant, Samuel Manas-Valero, Kirill Bolotin, Josep Canet-Ferrer, Eugenio Coronado","doi":"arxiv-2409.04749","DOIUrl":"https://doi.org/arxiv-2409.04749","url":null,"abstract":"Single photons emitters (SPEs) are key components in quantum information\u0000applications and are commonly generated in 2D materials by inhomogeneous strain\u0000engineering. Here, we report an alternative approach that involves a 2D\u0000semiconductor/2D magnet heterostructure. The optical study of the WSe2/CrSBr\u0000heterostructures reveals several new emission lines at lower energies compared\u0000to characteristic WSe2 emissions, that are assigned to localized excitons.\u0000Further investigation demonstrates that one of these emergent lines is an SPE\u0000with a strong valley polarization response and large energy shift with the\u0000field-induced metamagnetic transition in CrSBr, linking it to the magnetic\u0000proximity effect of the adjacent CrSBr layer. In contrast to previous reports\u0000on WSe2 that only allow tuning of the SPEs by out-of-plane magnetic field, our\u0000emitter is sensitive to both in- and out-of-plane fields. Our findings\u0000demonstrate the potential of this approach for improved control and\u0000polarization of SPEs in 2D materials.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142177781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A geometric condition for robot-swarm cohesion and cluster-flock transition 机器人群凝聚力和群锁过渡的几何条件

arXiv - PHYS - Applied Physics Pub Date : 2024-09-06 DOI: arxiv-2409.04618

Mathias Casiulis, Eden Arbel, Yoav Lahini, Stefano Martiniani, Naomi Oppenheimer, Matan Yah Ben Zion

引用次数: 0

Experimental realization of an active time-modulated acoustic circulator 有源时间调制声环流器的实验实现

arXiv - PHYS - Applied Physics Pub Date : 2024-09-06 DOI: arxiv-2409.04251

Matthieu Malléjac, Romain Fleury

引用次数: 0

Multi-Roller Structure Triboelectric Nanogenerator for Enhanced Water Wave Energy Harvesting and Energy Management 用于增强水波能量收集和能源管理的多辊结构三电纳米发电机

arXiv - PHYS - Applied Physics Pub Date : 2024-09-05 DOI: arxiv-2409.03601

Kequan Xia, Zhiwei Xu, Lizhong Wang, Min Yu

{"title":"Multi-Roller Structure Triboelectric Nanogenerator for Enhanced Water Wave Energy Harvesting and Energy Management","authors":"Kequan Xia, Zhiwei Xu, Lizhong Wang, Min Yu","doi":"arxiv-2409.03601","DOIUrl":"https://doi.org/arxiv-2409.03601","url":null,"abstract":"Wave energy harvesting is critical for advancing the development and\u0000utilization of marine resources. In this study, we present a novel multi-roller\u0000structure triboelectric nanogenerator (MR-TENG) designed specifically for\u0000efficient water wave energy harvesting. The MR-TENG leverages a coupled\u0000multi-roller design to significantly enhance its energy harvesting\u0000capabilities. The triboelectric layers are composed of polytetrafluoroethylene\u0000(PTFE) film and paper, with a grid copper electrode serving as the conductive\u0000element. Through an optimized energy output strategy, a single MR-TENG is\u0000capable of generating 602.045 {mu}J of electrical energy within 100 s. The\u0000device achieves a short-circuit current (Isc) of approximately 2.06 {mu}A and\u0000an open-circuit voltage (Voc) of around 166 V. We further investigate the\u0000impact of different connection modes, including parallel and series\u0000configurations, on the performance of MR-TENG arrays. Notably, the electrical\u0000energy produced by the MR-TENG array is sufficient to power 40 blue commercial\u0000light-emitting diodes (LEDs). This research not only introduces a versatile\u0000optimization approach and energy management strategy for roller-structured\u0000TENGs but also contributes significantly to the advancement of ocean-based TENG\u0000technology.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142177798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly robust and efficient metal-free water cup solid-liquid triboelectric generator for mechanical energy harvesting and ethanol detection 用于机械能收集和乙醇检测的高度坚固、高效的无金属水杯固液三相发电机

arXiv - PHYS - Applied Physics Pub Date : 2024-09-05 DOI: arxiv-2409.03604

Kequan Xia, Min Yu

{"title":"Highly robust and efficient metal-free water cup solid-liquid triboelectric generator for mechanical energy harvesting and ethanol detection","authors":"Kequan Xia, Min Yu","doi":"arxiv-2409.03604","DOIUrl":"https://doi.org/arxiv-2409.03604","url":null,"abstract":"Recently, low-frequency mechanical energy harvesters based on solid-liquid\u0000contact electrification have garnered widespread attention for their unique\u0000advantages in wear resistance, high charge transfer efficiency, and novel\u0000insights into electron-ion interactions at the solid-liquid interface,\u0000particularly in material identification. Hence, we designed an robust and\u0000efficient water cup triboelectric nanogenerator (WC-TENG) that only uses\u0000ordinary drinking water and plastic water cups as primary materials, achieving\u0000high-efficiency power output while eliminating the need for metal electrodes\u0000and effectively addressing the issue of corrosion in generator components.\u0000Experimental results indicate that, at an operating frequency of 2 Hz, the\u0000WC-TENG generates an open-circuit voltage (Voc) of 249.71 V, a short-circuit\u0000current (Isc) of 4.21 uA, and a transferred charge (Qsc) of 188.85 nC. The\u0000WC-TENG demonstrates long-term stability and reliability, maintaining stable\u0000voltage output over 1500 s. Moreover, the WC-TENG maintains stable performance\u0000under high humidity conditions, and its output enhances with increasing\u0000temperature, underscoring its robustness and adaptability for diverse\u0000environmental applications. Furthermore, the introduction of ethanol disrupts\u0000the potential balance at the solid-liquid interface by impeding electron\u0000transfer and reducing the WC-TENG's electrical output, but as the ethanol\u0000volatilizes, the device gradually returns to its original potential state,\u0000demonstrating its potential as a selective ethanol sensor. This design not only\u0000advances the development of corrosion-resistant, high-performance energy\u0000harvesters but also opens up new possibilities for low-cost, sustainable, and\u0000environmentally adaptable sensing technologies.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142177797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-phase-noise surface acoustic wave oscillator using phononic crystal bandgap-edge mode 利用声子晶体带隙边缘模式的低相噪表面声波振荡器

arXiv - PHYS - Applied Physics Pub Date : 2024-09-05 DOI: arxiv-2409.03162

Zichen Xi, Joseph G. Thomas, Jun Ji, Dongyao Wang, Zengyu Cen, Ivan I. Kravchenko, Bernadeta R. Srijanto, Yu Yao, Yizheng Zhu, Linbo Shao

{"title":"Low-phase-noise surface acoustic wave oscillator using phononic crystal bandgap-edge mode","authors":"Zichen Xi, Joseph G. Thomas, Jun Ji, Dongyao Wang, Zengyu Cen, Ivan I. Kravchenko, Bernadeta R. Srijanto, Yu Yao, Yizheng Zhu, Linbo Shao","doi":"arxiv-2409.03162","DOIUrl":"https://doi.org/arxiv-2409.03162","url":null,"abstract":"Low-phase-noise microwave-frequency integrated oscillators provide compact\u0000solutions for various applications in signal processing, communications, and\u0000sensing. Surface acoustic waves (SAW), featuring orders-of-magnitude shorter\u0000wavelength than electromagnetic waves at the same frequency, enable integrated\u0000microwave-frequency systems with much smaller footprint on chip. SAW devices\u0000also allow higher quality (Q) factors than electronic components at room\u0000temperature. Here, we demonstrate a low-phase-noise gigahertz-frequency SAW\u0000oscillator on 128{deg}Y-cut lithium niobate, where the SAW resonator occupies\u0000a footprint of 0.05 mm$^2$. Leveraging phononic crystal bandgap-edge modes to\u0000balance between Q factors and insertion losses, our 1-GHz SAW oscillator\u0000features a low phase noise of -132.5 dBc/Hz at a 10 kHz offset frequency and an\u0000overlapping Hadamard deviation of $6.5times10^{-10}$ at an analysis time of 64\u0000ms. The SAW resonator-based oscillator holds high potential in developing\u0000low-noise sensors and acousto-optic integrated circuits.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142177801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Over 50 mA current in interdigitated diamond field effect transistor 互嵌式金刚石场效应晶体管中的电流超过 50 mA

arXiv - PHYS - Applied Physics Pub Date : 2024-09-05 DOI: arxiv-2409.03293

Damien MichezLAPLACE-CS, Juliette LetellierNEEL - SC2G, Imane HammasNEEL - SC2G, Julien PernotNEEL - SC2G, Nicolas C. RougerLAPLACE-CS

{"title":"Over 50 mA current in interdigitated diamond field effect transistor","authors":"Damien MichezLAPLACE-CS, Juliette LetellierNEEL - SC2G, Imane HammasNEEL - SC2G, Julien PernotNEEL - SC2G, Nicolas C. RougerLAPLACE-CS","doi":"arxiv-2409.03293","DOIUrl":"https://doi.org/arxiv-2409.03293","url":null,"abstract":"This letter presents the bulk diamond field-effect transistor (FET) with the\u0000highest current value reported at this moment. The goal was to drastically\u0000increase the current of this type of device by increasing the total gate width\u0000thanks to an interdigitated architecture and homogeneous growth properties. We\u0000report the results obtained by fabricating and characterizing an interdigitated\u0000junction FET (JFET). The device develops a total gate width of 14.7 mm, with 24\u0000paralleled fingers and a current higher than 50 mA at VDS = -15 V, VGS = 0 V,\u0000at 450 K and under illumination which is the highest value reported for a bulk\u0000diamond FET. Its specific ON-resistance and threshold voltage are respectively\u0000608 m$Omega$.cm${}^2$, 50 V. From Transfer length method (TLM) measurements we\u0000extract a resistivity of 3.6 m$Omega$.cm for a heavily boron-doped\u0000(p++)-diamond layer and 1.52 $Omega$.cm for a 2.1017 cm-3 p-doped diamond\u0000layer at 450 K. We measured the drain current versus gate voltage\u0000characteristics at high temperature showing that it is no longer the conduction\u0000channel resistance but the device access resistance that is predominant. This\u0000study indicates that it is possible to drastically improve the ON-state of FETs\u0000by using an interdigitated architecture, while using homogeneous large size\u0000diamond layers grown by CVD.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142177799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bonding Hierarchy and Coordination Interaction Leading to High Thermoelectricity in Wide Bandgap TlAgI2 导致宽带隙 TlAgI2 具有高热电性的键合层次和配位相互作用

arXiv - PHYS - Applied Physics Pub Date : 2024-09-05 DOI: arxiv-2409.03229

Xiaoying Wang, Mengyang Li, Minxuan Feng, Xuejie Li, Yuzhou Hao, Wen Shi, Jiangang He, Xiangdong Ding, Zhibin Gao

{"title":"Bonding Hierarchy and Coordination Interaction Leading to High Thermoelectricity in Wide Bandgap TlAgI2","authors":"Xiaoying Wang, Mengyang Li, Minxuan Feng, Xuejie Li, Yuzhou Hao, Wen Shi, Jiangang He, Xiangdong Ding, Zhibin Gao","doi":"arxiv-2409.03229","DOIUrl":"https://doi.org/arxiv-2409.03229","url":null,"abstract":"High thermoelectric properties are associated with the phonon-glass\u0000electron-crystal paradigm. Conventional wisdom suggests that the optimal\u0000bandgap of semiconductor to achieve the largest power factor should be between\u00006 and 10 kbT. To address challenges related to the bipolar effect and\u0000temperature limitations, we present findings on Zintl-type TlAgI2, which\u0000demonstrates an exceptionally low lattice thermal conductivity of 0.3 W m-1 K-1\u0000at 300 K. The achieved figure of merit (ZT) for TlAgI2, featuring a 1.55 eV\u0000bandgap, reaches a value of 2.20 for p-type semiconductor. This remarkable ZT\u0000is attributed to the existence of extended antibonding states Ag-I in the\u0000valence band. Furthermore, the bonding hierarchy, influencing phonon\u0000anharmonicity, and coordination bonds, facilitating electron transfer between\u0000the ligand and the central metal ion, significantly contribute to electronic\u0000transport. This finding serves as a promising avenue for the development of\u0000high ZT materials with wide bandgaps at elevated temperatures.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142177803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simplified EPFL GaN HEMT Model 简化的 EPFL GaN HEMT 模型

arXiv - PHYS - Applied Physics Pub Date : 2024-09-05 DOI: arxiv-2409.03589

Farzan Jazaeri, Majid Shalchian, Ashkhen Yesayan, Amin Rassekh, Anurag Mangla, Bertrand Parvais, Jean-Michel Sallese

引用次数: 0