简化的 EPFL GaN HEMT 模型

arXiv - PHYS - Applied Physics Pub Date : 2024-09-05 DOI:arxiv-2409.03589

Farzan Jazaeri, Majid Shalchian, Ashkhen Yesayan, Amin Rassekh, Anurag Mangla, Bertrand Parvais, Jean-Michel Sallese

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引用次数: 0

摘要

本文介绍了 EPFLHEMT 模型[1]的简化和面向设计的版本，重点是归一化跨导-电流特性（Gm/ID）。根据这些数据，我们深入了解了与技术相关的 GaN HEMT 模型，从而对器件行为有了全面的认识。通过测量在 IMEC 制造的氮化镓 HEMT 在各种偏压下的传输特性，验证了这一简化方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Simplified EPFL GaN HEMT Model

This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying on these figures, insights into GaN HEMT modeling in relation to technology offers a comprehensive understanding of the device behavior. Validation is achieved through measured transfer characteristics of GaN HEMTs fabricated at IMEC on a broad range of biases. This simplified approach should enable a simple and effective circuit design methodology with AlGaN/GaN HEMT heterostructures.

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arXiv - PHYS - Applied Physics

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