简化的 EPFL GaN HEMT 模型

Farzan Jazaeri, Majid Shalchian, Ashkhen Yesayan, Amin Rassekh, Anurag Mangla, Bertrand Parvais, Jean-Michel Sallese
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引用次数: 0

摘要

本文介绍了 EPFLHEMT 模型[1]的简化和面向设计的版本,重点是归一化跨导-电流特性(Gm/ID)。根据这些数据,我们深入了解了与技术相关的 GaN HEMT 模型,从而对器件行为有了全面的认识。通过测量在 IMEC 制造的氮化镓 HEMT 在各种偏压下的传输特性,验证了这一简化方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Simplified EPFL GaN HEMT Model
This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying on these figures, insights into GaN HEMT modeling in relation to technology offers a comprehensive understanding of the device behavior. Validation is achieved through measured transfer characteristics of GaN HEMTs fabricated at IMEC on a broad range of biases. This simplified approach should enable a simple and effective circuit design methodology with AlGaN/GaN HEMT heterostructures.
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