Hyuckwon Kwon, Chanjin Park, Kyeong-Soo Kang, Ji-Hwan Park, Soo-Yeon Lee
{"title":"A Mura model-based optical compensation for organic light-emitting diode display luminance nonuniformity utilizing two image capturing","authors":"Hyuckwon Kwon, Chanjin Park, Kyeong-Soo Kang, Ji-Hwan Park, Soo-Yeon Lee","doi":"10.1002/jsid.2017","DOIUrl":"https://doi.org/10.1002/jsid.2017","url":null,"abstract":"<p>In this paper, we proposed a new optical <i>Mura</i> compensation method that requires only a few <i>Mura</i> detections for all gray levels. We analyzed the characteristics of <i>Mura</i> resulting from process variations in the thin film transistor (TFT) of each pixel and developed a new model using a logarithmic function. The proposed compensation algorithm has been verified with simulation and experimental results. We found that the uniformity of the proposed compensation algorithm at 7G, 24G, 75G, 100G, 150G, and 255G, which required only two image captures, was comparable to those that required five captures. The model improved uniformity from 41.32% to 68.60% at 0.18 nit brightness, demonstrating its effectiveness. Additionally, the method significantly reduces the number of image captures needed from five to two and decreases the image capturing process time from 2183 to 150 ms, saving over 14 times in process efficiency. The proposed methodology demonstrates significant advancements in achieving luminance uniformity in OLED displays, addressing mass production constraints.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":"33 1","pages":"24-33"},"PeriodicalIF":1.7,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143112869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jinho Moon, Hyunwoo Kim, Yongchan Kim, Jae Woo Chung, Hojin Lee
{"title":"Adaptive frequency driving scan driver based on a-InGaZnO TFTs for extremely low-power displays","authors":"Jinho Moon, Hyunwoo Kim, Yongchan Kim, Jae Woo Chung, Hojin Lee","doi":"10.1002/jsid.2020","DOIUrl":"https://doi.org/10.1002/jsid.2020","url":null,"abstract":"<p>In this paper, we propose a novel scan driver combined with a logic circuit using amorphous indium-gallium-zinc-oxide (a-InGaZnO) thin-film transistors (TFTs) in order to enhance the electrical stability and reduce power consumption in display panels. The latest mobile displays with high resolution and refresh rates consume more battery power, which inevitably limits portability and usability. The proposed scan driver can mask the signal by combining the output stage with a logic circuit, thereby blocking the output pulse for static images. This allows the display panel to operate in a partial driving mode depending on the display content. Due to the masking of the scan driver's output pulses, the connected pixel circuits are consistently maintained in the same state as the previous frame, leading to a lower refresh rate and reduced power consumption. Furthermore, by constructing additional control signals, the proposed scan driver can operate stably in depletion mode under a ∆V<sub><i>TH</i></sub> = −3 V.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":"33 2","pages":"74-82"},"PeriodicalIF":1.7,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143380271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Patrick Le Maitre, Anthony Cibié, Fabian Rol, Stéphanie Jacob, Nicolas Michit, Sultan El Badaoui, Julia Simon, Bastien Miralles, Clément Ballot, Bernard Aventurier, Paolo De Martino
{"title":"Short range optical communication with GaN-on-Si microLED and microPD matrices","authors":"Patrick Le Maitre, Anthony Cibié, Fabian Rol, Stéphanie Jacob, Nicolas Michit, Sultan El Badaoui, Julia Simon, Bastien Miralles, Clément Ballot, Bernard Aventurier, Paolo De Martino","doi":"10.1002/jsid.2012","DOIUrl":"https://doi.org/10.1002/jsid.2012","url":null,"abstract":"<p>(In)GaN microLEDs have reached a high degree of maturity due to their development in the lighting industry. Their robustness and high efficiency make them ideal candidates for high-brightness, high-resolution micro-displays. Beyond display applications, microLEDs are being explored for non-display uses, including wireless Visible Light Communication (VLC) and parallel communication via multicore fiber. This study investigates short-range chip-to-chip optical communication using InGaN/GaN microLEDs and micro Photodiodes (microPDs). Leveraging processes developed for micro-displays, we address the challenges of integrating GaN microLEDs and microPDs on ASICs. We outline the main figures of merit, including expected energy efficiency, optical coupling to multicore fibers or waveguides, and the spectral efficiency of InGaN/GaN microPDs correlated with TCAD simulation and experimental transmission results. Our study highlights the potential of GaN microLEDs and microPDs for massively parallel, energy-efficient data transmission, paving the way for innovative short-range and energy-efficient optical communication solutions.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":"32 12","pages":"797-814"},"PeriodicalIF":1.7,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jsid.2012","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142762164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High-speed and contactless inspection of defective micro-LEDs through the photovoltaic effect","authors":"Toshiro Yasuda, Shigetoshi Sugawa, Yayoi Yokomichi, Kazuhisa Kobayashi, Hiroshi Hamori, Akinobu Teramoto","doi":"10.1002/jsid.2013","DOIUrl":"https://doi.org/10.1002/jsid.2013","url":null,"abstract":"<p>The most significant challenge associated with micro-light-emitting-diode (micro-LED) displays, which are anticipated to be the next generation of display technology, is the high manufacturing cost. In order to reduce manufacturing costs, it is essential to improve yield. Improving the manufacturing yield of them necessitates the evaluation of micro-LED chips prior to their installation onto substrates. However, the microsize and large quantity of these chips renders inspection difficult with conventional inspection methods. Herein, we propose a method for inspecting micro-LED chips by measuring the voltage generated between the anode and cathode due to the photovoltaic effect using a developed proximity capacitance image sensor. As this inspection method does not require the use of probe pins to contact LED electrodes, it enables simultaneous inspection of multiple chips in a short time without causing any damage to the electrodes. In this paper, an experimental system equipped with this sensor was developed to demonstrate the basic measurement principle. Moreover, we demonstrated that more than 50,000 micro-LED chips with a size of 60 μm × 34 μm can be simultaneously inspected in approximately 2 s.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":"32 12","pages":"825-835"},"PeriodicalIF":1.7,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jsid.2013","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142762399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Shadow effect in dual-source thermally evaporated perovskite patterns","authors":"Nian Liu, Jiajun Luo, Jiang Tang","doi":"10.1002/jsid.2011","DOIUrl":"https://doi.org/10.1002/jsid.2011","url":null,"abstract":"<p>Perovskite light-emitting diodes (PeLEDs) have recently emerged as a potential next-generation display technology due to their wide color gamut, high external quantum efficiency (EQE), and low fabrication cost. The thermal evaporation process with no solvent involvement and offers low substrate selectivity and high compatibility with production lines has attracted significant academic interest. However, in thermal evaporation processes, the shadow effect greatly affects the deposition size and positioning accuracy of the patterns, consequently impacting the effective device area and process repeatability of PeLEDs. In this study, we calculated the shadow distance during the dual-source thermal evaporation and analyzed the issues of misalignment and size deviation caused by shadow effects. Based on the calculation of shadow distance, we increased the substrate height from 33 to 38 cm to enhance the deposition angle. This adjustment led to an improvement in the characteristic parameter <i>W</i><sub>1</sub>/<i>W</i><sub>dot</sub> from 0.178 to 0.365 during perovskite deposition. As a result, we successfully obtained a high-resolution perovskite array with uniform morphology and photofluorescence (PL) emission at 600 pixels per inch (ppi). This demonstrated the reliable calculation and analysis of shadow distance, which is effective for fine deposition of high-resolution perovskite patterns and PeLEDs.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":"33 2","pages":"66-73"},"PeriodicalIF":1.7,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143381012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Three hundred sixty-degree viewable linear grooves 3D display","authors":"Akua Kawakami, Daisuke Okuyama, Haruki Mizushina, Shiro Suyama, Kenji Yamamoto","doi":"10.1002/jsid.2005","DOIUrl":"https://doi.org/10.1002/jsid.2005","url":null,"abstract":"<p>We proposed a linear grooves 3D display that can display 360° viewable 3D images by creating linear grooves that correspond to the viewpoint positions. In the conventional method, arc-shaped grooves are drawn on a flat substrate of transparent film. However, depending on the viewing position, the image may be distorted. In addition, when a flat substrate is bent into a curved shape, the image is more affected than one observed in a flat shape. Furthermore, the conventional method of arc 3D display method cannot display a 3D image that corresponds to the viewpoint position. In this paper, we propose design and fabrication methods that reduce the image distortion for both flat and curved shapes. A 3D image displayed by the proposed method can change depending on the viewpoint position, and a natural 3D image with motion parallax can be observed. In the experiment, our proposed method fabricated a 360° 3D display by calculating the linear grooves and presented natural 3D images with smooth motion parallax.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":"32 12","pages":"815-824"},"PeriodicalIF":1.7,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142762748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Enhancing optical output power efficiency in nitride-based green micro light-emitting diodes by sidewall ion implantation","authors":"Yu-Hsiang Chang, Yuan-Chao Wang, Jian-Jang Huang","doi":"10.1002/jsid.2010","DOIUrl":"https://doi.org/10.1002/jsid.2010","url":null,"abstract":"<p>Though micro-LED (light-emitting diode) displays are considered the emerging display technology, the micron-scale LED chip size encounters severe efficiency degradation that may impact the power budget of the displays. This work proposes an ion implantation method to deliberately create a high-resistivity sidewall in the InGaN/GaN green LED. Our study demonstrates that ion implantation suppresses reverse leakage current due to the mitigation of sidewall defects. For an LED mesa size of 10 × 10 μm<sup>2</sup>, optical output power density is improved by 36.2% compared to the device without implantation. Compared to a larger 100 × 100 μm<sup>2</sup> device without implantation, we achieve only 21.3% degradation of output power density under 10 A/cm<sup>2</sup> injection for a 10 × 10 μm<sup>2</sup> LED with implantation. In addition, the ion implantation method can lower the wavelength shift by reducing light emission from the region near the sidewall (where the amount of Indium [In] clustering differs from the mesa region). The results show promise in addressing the efficiency challenges of micro-LED displays by selective ion implantation.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":"32 11","pages":"775-781"},"PeriodicalIF":1.7,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142596421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Changyeol Han, Sooho Lee, Yunhyuk Ko, Jungho Cho, Yun Ku Jung, Dong Jin Kang, Donghoon Kwak, Sehun Kim, Jaekook Ha, Yeo-geon Yoon, Changhee Lee
{"title":"Inkjet-printed quantum dot light-emitting diodes: Development and challenges for display applications","authors":"Changyeol Han, Sooho Lee, Yunhyuk Ko, Jungho Cho, Yun Ku Jung, Dong Jin Kang, Donghoon Kwak, Sehun Kim, Jaekook Ha, Yeo-geon Yoon, Changhee Lee","doi":"10.1002/jsid.2006","DOIUrl":"https://doi.org/10.1002/jsid.2006","url":null,"abstract":"<p>Quantum dot (QD) technology is rapidly advancing and draws much attention for display applications where accurate and vibrant color reproduction is highly required. Currently, significant research is being conducted in developing quantum dot light-emitting diode (QD-LED) as next-generation displays. QD-LEDs offer several advantages, including high color purity, wide color gamut, and lower manufacturing costs. Recent advancements in QD synthesis and device engineering have significantly improved the performance of QD-LEDs, but several challenges must be addressed for the successful commercialization. In this article, we provide an overview of QD-LED developments and key issues that are required to be solved for realizing practical inkjet-printed QD-LED displays.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":"33 2","pages":"53-65"},"PeriodicalIF":1.7,"publicationDate":"2024-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143381097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Region-selective shift register by a single output enable signal for a multiple refresh frequency driving scheme","authors":"Min Kyu Chang, Ji Hoon Kim, Hyoungsik Nam","doi":"10.1002/jsid.2008","DOIUrl":"https://doi.org/10.1002/jsid.2008","url":null,"abstract":"<p>Many low-power technologies have been developed for high-performance displays. One method is to vary the refresh rate according to the input image, where frequencies are reduced over still images and slow-moving videos. To support the variable refresh rate scheme, the programmable gate driver circuit should be integrated. This paper proposes a thin-film transistor (TFT) shift register of which output pulse is simply controlled by an enable signal. Because the output pulse generation is directly adjusted without the previous programming period, various output pulse sequences are possible with the high flexibility. The shift register is composed by adding six TFTs and one capacitor to a conventional circuit that provides a carry pulse to a next stage. The simulation program with integrated circuit emphasis (SPICE) simulation ensures that gate pulses for any numbers of lines in any regions can be generated within one frame only by applying the enable signal at the corresponding timing, resulting in multiple refresh frequencies in a screen. In addition, it is verified that additional TFTs and capacitor contribute to only the negligible increase in power consumption by 2.1%, compared to a conventional shift register.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":"32 11","pages":"765-774"},"PeriodicalIF":1.7,"publicationDate":"2024-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jsid.2008","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142596401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xudong Cao, Xiao Liang, Kai Xu, Chong Li, Zhaochao Zhang, Lian Duan
{"title":"Highly efficient green-emissive organic light emitting diodes based on multiple-resonance boron-nitrogen materials","authors":"Xudong Cao, Xiao Liang, Kai Xu, Chong Li, Zhaochao Zhang, Lian Duan","doi":"10.1002/jsid.2009","DOIUrl":"https://doi.org/10.1002/jsid.2009","url":null,"abstract":"<p>Green-emission phosphor-sensitized OLEDs were demonstrated to achieve extremely high performance. SY-FGD8-based sensitized top-emission devices achieved current efficiency of 232.8 cd/A@10 mA/cm<sup>2</sup>, LT95@50 mA/cm<sup>2</sup>, room temperature of 71 h and LT80@20 mA/cm<sup>2</sup>, 85°C of 187 h, which are greatly improved by 28%, 29%, and 65%, respectively, compared to phosphorescent devices. Notably, SY-FGD8 exhibited excellent compatibility with different host and phosphorescent sensitizers.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":"32 12","pages":"789-796"},"PeriodicalIF":1.7,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142762695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}