Applied Physics A最新文献

{"title":"Semi-transparent and flexible organic transistors using PEDOT: PSS gate and Parylene-C gate dielectric and their optical sensor application","authors":"Yoojeong Ko,&nbsp;Kyeungbin Kim,&nbsp;Dong-Wook Park","doi":"10.1007/s00339-025-08374-5","DOIUrl":"10.1007/s00339-025-08374-5","url":null,"abstract":"<div><p>The essential characteristics of organic thin-film transistors (OTFTs) applicable to flexible displays and biosensors are flexibility and biocompatibility. Additionally, by achieving transparency, it is possible to fabricate transparent electronic devices that are visually more natural and interact effectively with their surroundings compared to conventional devices. In this study, we developed a semi-transparent OTFT that satisfies these requirements by utilizing the polymers Parylene-C, PDPP2T-TT-OD(DPP-DTT), and Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT: PSS). Parylene-C was used as the substrate and gate insulator, ensuring the transparency and flexibility of the OTFT. PEDOT: PSS, employed as the gate electrode, exhibited ease of processing, high flexibility, and a transparency of 92%. Additionally, DPP-DTT, used as the channel material, is a p-type polymer that allows for thin-film formation through solution processing and spin-coating, thus simplifying the fabrication process. The fabricated semi-transparent flexible OTFT exhibited a mobility of 0.002 cm²/Vs and an I_ON/I_OFF ratio exceeding 10⁵. Finally, by demonstrating that the current in the DPP-DTT channel formed on the transparent gate electrode and insulator changes with light intensity, we confirmed the potential applicability of the proposed semi-transparent transistor as a photosensor.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143638319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evolution of magnetic property of La0.8Sr0.2Mn1−xFexO3 (0.0 ≤ x ≤ 1.0) perovskite oxides","authors":"Li-Qian Wu,&nbsp;Zhuang-Zhi Li,&nbsp;Pei Zhou,&nbsp;Wei-Hua Qi,&nbsp;Gui-De Tang,&nbsp;Wei Zhong","doi":"10.1007/s00339-025-08427-9","DOIUrl":"10.1007/s00339-025-08427-9","url":null,"abstract":"<div><p>La_0.8Sr_0.2Mn_1−<i>x</i>Fe_<i>x</i>O₃ (0.0 ≤ <i>x</i> ≤ 1.0) polycrystalline powder samples were synthesized using the sol–gel method. X-ray diffraction (XRD) analyses confirmed that the samples have single phase ABO₃ perovskite crystal structure. Magnetic measurements at 10 K indicated that the magnetization decreased from 3.345 to 0.0075 µ_B/formula as <i>x</i> increased from 0.0 to 0.7, then it increased to 0.010 µ_B/formula at <i>x</i> = 1.0. In these samples, a Fe³⁺ cation is canted anti-ferromagnetic coupling with the adjacent Mn³⁺ cation. In crystalline grains of the powder samples, there are magnetic domains (MDs), while each MD makes spontaneous magnetization along the Weiss’s molecule field <i>H</i>_M direction. It is found that the average canted angle <i>θ</i>, between cation magnetic moments and <i>H</i>_M direction, increases with increasing <i>x</i>; for the samples with <i>x</i> ≤ 0.7, the <i>θ</i> value is lower than 90°; for the samples with <i>x</i> = 0.9 and 1.0, the <i>θ</i> value is higher than 90°.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143638315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An investigation on microstructural, physical, and radiation shielding properties Yb2O3 oxide dispersion-strengthened 316L-SS alloys","authors":"Ghada ALMisned,&nbsp;Nihal Yayla,&nbsp;M. Gökhan Albayrak,&nbsp;Ömer Güler,&nbsp;Duygu Sen Baykal,&nbsp;Hessa Alkarrani,&nbsp;Gulfem Susoy,&nbsp;H. O. Tekin","doi":"10.1007/s00339-025-08381-6","DOIUrl":"10.1007/s00339-025-08381-6","url":null,"abstract":"<div><p>Oxide dispersion-strengthened alloys have emerged as a highly effective solution to address the physical, structural, and shielding challenges faced by traditional alloys in nuclear environments. This study presents a comprehensive evaluation of the microstructural, mechanical, and radiation shielding properties of Yb₂O₃ oxide dispersion-strengthened 316L stainless steel composites at varying Yb₂O₃ concentrations such as 1%, 5%, 10%, and 20% by weight. XRD analysis revealed lattice distortions, with crystallite sizes decreasing from 11.2267 nm to 9.3351 nm. SEM/EDX analyses confirmed homogeneous Yb₂O₃ dispersion at lower concentrations, with agglomeration at 20% Yb₂O₃. The mass attenuation coefficient increased from 56.103 cm²/g to 65.919 cm²/g at 0.015 MeV, marking a 17.5% enhancement. HVL decreased by 40.68% at 0.2 MeV for the 20% Yb₂O₃ sample. Additionally, the 20% Yb₂O₃ composite showed nearly 33% lower transmission factor at 3.0 cm thickness and 0.662 MeV. It can be concluded that Yb₂O₃ reinforcement significantly enhances the microstructural, and gamma-ray attenuation properties of 316L-SS composites, positioning them as promising materials for advanced nuclear shielding and structural applications.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143645620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of structural and electro-optical properties of Al/PbO/p-Si thin films produced by CBD and SILAR methods","authors":"Emine Erdem,&nbsp;Ömer Güllü,&nbsp;Mustafa Okumuş","doi":"10.1007/s00339-025-08410-4","DOIUrl":"10.1007/s00339-025-08410-4","url":null,"abstract":"<div><p>In this study, Al/PbO/p-Si thin films were produced using two highly economical and practical methods: chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR). The structural and optical properties of the produced thin films were examined in detail and the results were compared according to the production methods. XRD analysis revealed the prominent presence of the tetragonal (α-PbO) and orthorhombic (β-PbO) phases of PbO. The crystallite sizes of PbO thin films were calculated using Debye–Scherrer and Williamson–Hall methods. It was determined that the PbO thin film produced by the CBD method had larger average crystallite sizes compared to those produced by the SILAR method (CBD D = 42.93 nm, SILAR D = 35.67 nm from Scherrer’s formula). The formation of the PbO₂ crystal phase in the PbO thin film produced by the SILAR method caused the lattice strain to increase from 2.93 × 10^–4 to 4.03 × 10^–4. It was also observed that the thin film produced by the SILAR method was better crystallized and exhibited less amorphization than the CBD method. The PbO thin film produced by the CBD method exhibited a tightly bound, porous structure composed of rod-shaped or irregularly layered grains. SEM results showed that the surface of the PbO thin film produced by the SILAR method was found to consist of dense micro-spherical aggregates, and had smaller porosities and particle formations than that produced by the CBD method. From the UV–visible light transmittance spectra, the band gap energy was determined for CBD and SILAR and found to be 3.61 eV and 3.75 eV, respectively. Moreover, the electrical and interface properties of the Al/PbO/p-Si MOS Schottky diode, formed using CBD and SILAR methods on p-type silicon (p-Si) substrate, were analyzed in detail. Important parameters such as current–voltage (I–V), differential resistance (R_j), and interface state density (N_ss) were examined under dark and illuminated conditions. As a novel result, the electronic performance of the Al/PbO/p-Si MOS Schottky diode produced by the SILAR method is higher than that produced by the CBD method.</p><h3>Graphical abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s00339-025-08410-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143645621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pure ZnO with cool white, warm white, orange and turquoise color emissions: a purely experimental approach","authors":"E. Lizárraga-Medina,&nbsp;F. Ramos-Brito,&nbsp;M. Aguilar-Frutis,&nbsp;J. Angulo-Rocha,&nbsp;R. Martinez-Martinez,&nbsp;Marco A. Sánchez-Alejó,&nbsp;C. Alejo-Armenta,&nbsp;Raúl Borja-Urby,&nbsp;M. García-Hipólito","doi":"10.1007/s00339-025-08371-8","DOIUrl":"10.1007/s00339-025-08371-8","url":null,"abstract":"<div><p>Pure ZnO microstructured phosphor of cool white, warm white, orange and turquoise color was prepared by chemical bath deposition (CBD). The color variation was solely a consequence of controlled variation in the relative contents of the native crystalline defect. Only hexagonal wurtzite phase of ZnO with good stoichiometry without additional phases and without crystalline parameters variation was observed. The band gap energy was successfully maintained between 3.05 and 3.22 eV, with an additional high optical absorption edge at 551 nm, associated with the excess of Zn ions in crystalline structure of ZnO. The absorption centers were categorized into thirteen bands and associated with energy levels related to native defects. The photoluminescence (PL) and cathodoluminescence (CL) emission spectra coincidentally exhibited four main peaks around 465 nm, 504 nm, 596 nm and 646 nm. The deconvolution of these spectra revealed emission bands that were categorized into 15 energy ranges. The energy associated with these bands closely matches the energy of the absorption bands identified by transmittance and reflectance spectroscopy without the need to consider the existence of additional acceptor levels close to the valence band that have not been observed experimentally, which allowed to propose a purely experimental energy diagram for ZnO. HR-TEM analysis revealed that for the cool white emitting ZnO, an irregular and incomplete hexagonal microstructure could be responsible for its native defect content that gives rise to its particular cool white emission.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143632564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Realization of terahertz polarization conversion and wideband absorption device based on vanadium dioxide phase transition control","authors":"Xuehui Weng,&nbsp;Dexian Yan,&nbsp;Yingjue Cao,&nbsp;Xiangjun Li","doi":"10.1007/s00339-025-08392-3","DOIUrl":"10.1007/s00339-025-08392-3","url":null,"abstract":"<div><p>A multifunctional terahertz metamaterial device assisted by vanadium dioxide (VO₂) is proposed. Leveraging the property that VO₂ can switch from an insulation state to metal state, the device can achieve linear-to-circular (LTC), linear-to-linear (LTL) polarization conversion, and wideband absorption. The investigation findings indicate that when VO₂ is in the insulating state, the structure can accomplish the corresponding LTL and LTC polarization conversions in the band of 1.0 -3.1 THz and 3.1–6.1 THz, respectively. When VO₂ is in the metallic phase, the device can achieve over 90% absorption from 3.10 THz to 4.95 THz, with the relative bandwidth of 46%. Furthermore, the impacts of structural dimensions, terahertz wave incident angles and polarization angles on the operating characteristics of multifunctional metamaterial structures have also been explored. The reported multifunctional metamaterial device demonstrates promising application in the area of terahertz technology research and intelligent application.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143632563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of annealing temperature on physical properties of transparent conductive MoO3/Ag/MoO3 trilayer films grown by sputtering","authors":"Zahra Nouri,&nbsp;Fatemeh Hajakbari,&nbsp;Alireza Hojabri","doi":"10.1007/s00339-025-08407-z","DOIUrl":"10.1007/s00339-025-08407-z","url":null,"abstract":"<div><p>In this work MoO₃/Ag/MoO₃ (MAM) trilayer films were successfully deposited onto quartz substrates using RF and DC magnetron sputtering. Following deposition, the samples were annealed at 300 °C, 400 °C, and 500 °C for 2 h in an electric furnace. X-ray diffraction (XRD) was employed to characterize the crystallographic structure. The results showed that the as-deposited film and the sample annealed at 300 °C were amorphous, while the crystalline orthorhombic (α-MoO₃) structure emerged at annealing temperatures of 400 °C and 500 °C. Atomic force microscopy (AFM) measurements were also performed to analyze the surface roughness of the films. In addition, field-emission scanning electron microscopy (FESEM) and energy-dispersive X-ray spectroscopy (EDX) were utilized to further analyze the surface morphology and elemental composition of the films. X-ray photoelectron spectroscopy (XPS) confirms the existence of Mo, O and Ag on the surface of both the as-deposited and annealed samples. The sheet resistance was measured using a four-point probe, and optical transmittance was evaluated via UV–Visible spectroscopy. Additionally, the variation in optical and electrical properties with annealing temperature was analyzed. The film annealed at 400 °C exhibited the optimal optoelectronic performance, with an improved figure of merit (FOM) of 6.10 × 10⁻² Ω⁻¹. This work provides an effective method to prepared MoO₃/Ag/MoO₃ trilayer transparent conductive films that potential application in optoelectronic devices especially in thin film solar cells.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143638372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural and transport properties of spray pyrolysed Ce: CdO nanocrystalline thin films for solar cell application","authors":"S. J. Helen,&nbsp;K. Selvakumar,&nbsp;M. Haris","doi":"10.1007/s00339-025-08411-3","DOIUrl":"10.1007/s00339-025-08411-3","url":null,"abstract":"<div><p>In the present study, spray pyrolysis was used to deposit undoped and cerium (Ce) doped cadmium oxide (CdO) thin films with doping concentrations (3, 5 and 7 wt %) films on cleaned glass substrates. The lattice parameter values and crystallite size were determined using X-ray diffraction analysis. The structural, morphological, optical, and electrical properties of the deposited films have been investigated. Scanning electron microscopy analysis reveals that the average grain size and surface morphology of Ce are effectively modified by CdO concentration. The average thickness of the films is estimated using cross-sectional SEM images that revealed that the films had an average thickness of 360 to 480 nm. The energy values for the band gap for 3 to 7 wt% Ce doped CdO thin films are anticipated to have energies between 2.47 and 2.50 eV. The defect-related luminescence is noted by the wideband emission observed (550 to 650 nm) in the PL spectra of CdO thin film. It is reported that 5 wt% Ce-doped CdO thin films have a high conductivity (9.84 × 10³ cm^− 1) and a low resistivity (1.02 × 10^− 6 cm^− 1). The results of the photo responsively studies revealed the increase in the photo response with the increasing Ce ions in CdO thin films. The thin films showed photo responsivity up to 70%. Hence, the prepared thin film is suitable for solar cell applications.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143632565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Atomic-scale study on the deformation mechanism of nanofabrication in nickel-based single-crystal superalloys embedded with NbC particles","authors":"Bo Song,&nbsp;Wentao Shi,&nbsp;Qiang Lu,&nbsp;Min Zheng,&nbsp;Weihua Chen,&nbsp;Zongxiao Zhu","doi":"10.1007/s00339-025-08404-2","DOIUrl":"10.1007/s00339-025-08404-2","url":null,"abstract":"<div><p>This paper focuses on the study of nanofabricated deformation mechanisms of nickel-based single crystal high temperature alloys embedded with NbC particles. The mechanical properties, defect evolution, atomic displacement, shear strain, temperature change and atomic precipitation behaviour of the alloy during nanofabrication are deeply investigated through molecular dynamics simulations. It was found that when the tool machined NbC particles on the substrate surface, it experienced lower tangential forces and friction coefficients compared to when machining NbC particles in the sub-surface position. In the latter case, the NbC particles effectively hindered defect development, leading to a significant increase in temperature. Analysis of atomic displacement trends, shear strain, and Von Mises strain revealed that NbC particles provide better protection to the composite’s interior when located beneath the surface rather than on the surface. Additionally, the heterointerface between NbC particles and the nickel matrix can cause local stress concentration, promoting dislocation nucleation. With continuous energy input during machining, dislocation accumulation occurs, significantly enhancing the alloy’s resistance to deformation. This study provides atomic-scale insights into understanding the effect of NbC particles on the nanofabrication properties of nickel-based high-temperature alloys.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143638371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dynamic magnetic characteristics and magnetocaloric effect of a diluted Graphene-like monolayer","authors":"Sheng Zou,&nbsp;Wei Wang,&nbsp;Si-yu Huang,&nbsp;Dan Lv,&nbsp;Yu-han Li,&nbsp;Gong-zhao Liu","doi":"10.1007/s00339-025-08387-0","DOIUrl":"10.1007/s00339-025-08387-0","url":null,"abstract":"<div><p>A Monte Carlo simulation is conducted to investigate the magnetic characteristics and magnetocaloric effect of the Ising model on a diluted graphene-like monolayer in this research. It is obtained that temperature-dependent dynamic order parameters, magnetic susceptibility, critical temperature, magnetic entropy, and RCP are strongly influenced by key physical parameters such as temperature (<i>T</i>), atomic concentration (<i>P</i>), crystal field (<i>D</i>), external magnetic field (<i>h₀</i>), additive bias field (<i>h</i>_<i>b</i>), and its angular frequency (<i>ω</i>). It is indicated that decreasing <i>P</i> and increasing <i>h</i>_<i>0</i> can significantly enhance the change in magnetic entropy and RCP. These results might provide an important theoretical basis for future applications of diluted graphene.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143622090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}