Applied Physics A最新文献_第8页

Retraction Note to: Investigation effect of Cr3+ substituted on enhanced dielectric and magnetic properties of co–cu nano ferrites for high-density data storage applications

IF 2.5 4区材料科学

Applied Physics A Pub Date : 2025-03-14 DOI: 10.1007/s00339-025-08413-1

B. Rupa Venkateswara Rao, P. S. V. Shanmukhi, Tulu Wegayehu Mammo, D. Kothandan, Tewodros Aregai, Tadesse Desta, Mebrahtom Kahsay, Gereziher Hagos, N. Murali, Khalid Mujasam Batoo, Ahmed Ahmed Ibrahim

引用次数: 0

Wave propagation in piezomagnetic-piezoelectric bilayer structure under sliding contact interface with external magnetic field

IF 2.5 4区材料科学

Applied Physics A Pub Date : 2025-03-14 DOI: 10.1007/s00339-025-08352-x

Mohd Sadab, Santimoy Kundu

{"title":"Wave propagation in piezomagnetic-piezoelectric bilayer structure under sliding contact interface with external magnetic field","authors":"Mohd Sadab, Santimoy Kundu","doi":"10.1007/s00339-025-08352-x","DOIUrl":"10.1007/s00339-025-08352-x","url":null,"abstract":"<div>An external magnetic field and microscale length parameter are introduced to derive the general governing equations for piezomagnetic-piezoelectric bilayer structure using a variable separation method. The contacts between layers are considered as sliding contacts. The governing dynamic equation, transverse deflection, and Maxwell’s equations for electric and magnetic potentials are solved simultaneously within each domain, yielding a comprehensive analytical solution. In magnetoelectric composites, shear wave propagation exhibits complex behavior influenced by external magnetic fields and microscale effects. The four dispersion relations are derived by applying admissible boundary conditions influenced by electric and magnetic fields. The key contribution of the current work is demonstrating the influence of sliding interface, thickness of the piezomagnetic layer, thickness ratio, external magnetic field, balancing force, and microscale length parameter on the shear wave propagation. The findings emphasize the role of these parameters, offering valuable insights into the dynamic behavior of advanced composite structures.</div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143621988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pulsed laser synthesis of Ag/ZnO heterojunction for enhanced photocatalytic performance

IF 2.5 4区材料科学

Applied Physics A Pub Date : 2025-03-14 DOI: 10.1007/s00339-025-08403-3

Yunchang Shi, Xiaohan Xing, Minghui Hong

{"title":"Pulsed laser synthesis of Ag/ZnO heterojunction for enhanced photocatalytic performance","authors":"Yunchang Shi, Xiaohan Xing, Minghui Hong","doi":"10.1007/s00339-025-08403-3","DOIUrl":"10.1007/s00339-025-08403-3","url":null,"abstract":"<div>Ag/ZnO heterojunction shows excellent performance in catalytic degradation, holding significant promise for applications in treating organic pollutants and water treatment. The complicated synthesis process has caused technical challenges, necessitating the development of a reliable, efficient, safe, and eco-friendly method. This study addresses these challenges by employing laser-induced hydrothermal growth (LIHG) to synthesise the Ag/ZnO heterojunction. During the synthesis, ZnO grows and Ag+ reduces, resulting in uniformly distributed heterojunctions. By laser thermal effect, Ag+ is deposited on ZnO surfaces. The heterojunction is in a tapered profile, and nanowires form a nanoflower. Under visible light irradiation, the Ag/ZnO heterojunction exhibits an enhancement (~ 31.3%) in photocatalytic performance compared to Ag/ZnO heterojunction synthesized by photo-deposition. It shows an enhancement (~ 2.5 times) in photocatalytic performance compared to bare ZnO in pollutant degradation. These results afford a new route to synthesise binary Ag/ZnO heterojunctions with better performance for wastewater treatment.</div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143612293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of composite adding Ta and Mo on microstructure and properties of W-Mo-Cr high-speed steel prepared by laser metal deposition

IF 2.5 4区材料科学

Applied Physics A Pub Date : 2025-03-14 DOI: 10.1007/s00339-024-08236-6

Min Zhang, Changjun Chen, Liangxin Hong

{"title":"Effect of composite adding Ta and Mo on microstructure and properties of W-Mo-Cr high-speed steel prepared by laser metal deposition","authors":"Min Zhang, Changjun Chen, Liangxin Hong","doi":"10.1007/s00339-024-08236-6","DOIUrl":"10.1007/s00339-024-08236-6","url":null,"abstract":"<div>W-Mo-Cr (M2) high-speed steel consisting of Tantalum or Molybdenum on #45 steel was prepared by a laser metal direct forming process. After the appropriate proportion of Ta or Mo powder is added, obvious grain refinement occurs, strengthening or toughening increase. On the basis of these work, the present study aims to harness the combined benefits of Ta and Mo by incorporating them into M2 HSS through laser metal deposition (LMD) technology, with the objective of achieving both high toughness and high hardness. The phase, microstructure, hardness, and wear resistance of the two kinds of steels are characterized by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, hardness and wear tests. The results show that compared with the deposition state, the microstructure of the samples after adding Ta and Mo shows grain refinement and carbide aggregation. In addition, the hardness and impact toughness of the samples increase to different degrees. However, after combined adding Ta and Mo, the composite addition of Mo can continue to improve the performance on the basis of 1% Ta alloying alone. The hardness continues to increase by 3.6%, the wear loss decreases by 19.4%, and the impact toughness value increases by 22.7%. Mo shows good strengthening and toughening and nucleating agent effects.</div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143612292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Non-plane film and its growth mechanism by magnetron sputtering deposition on glass through via substrate 通过磁控溅射沉积在玻璃通孔基板上的非平面薄膜及其生长机理

IF 2.5 4区材料科学

Applied Physics A Pub Date : 2025-03-14 DOI: 10.1007/s00339-025-08384-3

Xinyu Zhou, Xun Zhang, Songlin Liu, Jingyang Zhang, Zhilin Cao, Zhipeng Chang, Yingliang Tian, Ruzhi Wang

{"title":"Non-plane film and its growth mechanism by magnetron sputtering deposition on glass through via substrate","authors":"Xinyu Zhou, Xun Zhang, Songlin Liu, Jingyang Zhang, Zhilin Cao, Zhipeng Chang, Yingliang Tian, Ruzhi Wang","doi":"10.1007/s00339-025-08384-3","DOIUrl":"10.1007/s00339-025-08384-3","url":null,"abstract":"<div>The study on the uniform deposition of metal seed layers on the inner wall of TGV using magnetron sputtering has attracted significant attention. We primarily studied the film growth mechanism through the model, focusing on particle incidence, surface diffusion, particle scattering, and particle cluster nucleation. The effects of each mechanism on the final outcome of non-planar film growth and the non-planar conformal coverage rate are described in the form of probability functions. When the RF sputtering power was increased from 100 to 200W, the simulation results showed that the central CCR of the TGV increased from 8.03 to 10.76%. Experimental results indicated that the average central CCR of the TGV increased from 7.03 to 9.38%. When the sputtering gas was switched from 40 sccm Ar to 40 sccm Ar-2 sccm N2, the simulation results revealed that the central CCR of the TGV increased from 8.03 to 15.76%, while experimental results showed that the average central CCR increased from 7.03 to 13.46%. Additionally, we calculated the percentage errors of the CCR between the theoretical simulations and experimental tests under three different processes. The errors were 12.3%, 8.12%, and 6.75%, respectively.</div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143621833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The effect of plume removal on welding efficiency of pure copper using 1.5 kW blue diode laser

IF 2.5 4区材料科学

Applied Physics A Pub Date : 2025-03-14 DOI: 10.1007/s00339-025-08282-8

Mao Sudo, Shumpei Fujio, Kazuki Koda, Hideaki Shirai, Keisuke Takenaka, Masami Mizutani, Tim Pasang, Yuji Sato, Masahiro Tsukamoto

引用次数: 0

Fabrication and characterization of WS2/AlN/Si S-I-S heterojunction for emergent material photovoltaic applications

IF 2.5 4区材料科学

Applied Physics A Pub Date : 2025-03-14 DOI: 10.1007/s00339-025-08354-9

M. Benhaliliba, M. Dönmez Kaya, S. Özçelik, C. E. Benouis, K. Dris

{"title":"Fabrication and characterization of WS2/AlN/Si S-I-S heterojunction for emergent material photovoltaic applications","authors":"M. Benhaliliba, M. Dönmez Kaya, S. Özçelik, C. E. Benouis, K. Dris","doi":"10.1007/s00339-025-08354-9","DOIUrl":"10.1007/s00339-025-08354-9","url":null,"abstract":"<div>Here, the WS2/AlN/Si semiconductor-insulator-semiconductor (SIS) heterojunction based inorganic tungsten disulfide chalcogenide compound with the insertion of 10 nm thick Aluminium nitride (AlN) layer as insulator is investigated. Our study focuses on structural, surface morphology, optical and electrical properties of S-I-S heterojunction, fabricated by RF sputtering process, as a result of both WS2 (10, 50 and 100 nm) thickness and light conditons change at room temperature (RT). The grain size determined by X-ray is smaller around 42 nm which confirms the nanostructural aspect. This aspect is also revealed by AFM and SEM observations. The transmittance (T) of three samples declines from 90.8 to 59.3% when WS2 thickness rises. İt is observed that T-λ curves augment from UV range to Vis to highest point in IR band. The current versus voltage (I-V) characteristics of S-I-S are investigated in dark, solar simulator and filter 780 nm conditions. Related parameters are extracted from I-V curves showing an increase in both ideality factor and saturation current with WS2 layer thickness.</div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143612240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of nonmagnetic Ti substitution on the structural, magnetic and transport properties in pyrochlore iridate (text{Eu}_{{2}}(text{Ir}_{1-x}text{Ti}_{{x}})_{2}text{O}_{{7}})

IF 2.5 4区材料科学

Applied Physics A Pub Date : 2025-03-13 DOI: 10.1007/s00339-025-08357-6

Sampad Mondal, B. Maji, M. Modak, Swapan K. Mandal, S. Banerjee

{"title":"Effect of nonmagnetic Ti substitution on the structural, magnetic and transport properties in pyrochlore iridate (text{Eu}_{{2}}(text{Ir}_{1-x}text{Ti}_{{x}})_{2}text{O}_{{7}})","authors":"Sampad Mondal, B. Maji, M. Modak, Swapan K. Mandal, S. Banerjee","doi":"10.1007/s00339-025-08357-6","DOIUrl":"10.1007/s00339-025-08357-6","url":null,"abstract":"<div>We have studied the effect of nonmagnetic Ti substitution (text{Eu}_{{2}}(text{Ir}_{1-x}text{Ti}_{{x}})_{2}text{O}_{{7}}) with the help of electrical transport and magnetic measurement. Parent compound ((x=0)) shows a thermally induced metal insulator transition (MIT) and a long range antiferromagnetic ordering below 120 K. The doping of Ti at the Ir site leads to minor structural modification that enhances orbital overlapping and hence improves the electrical transport properties. However, tuning of the spin-orbit coupling, electronic correlation (U) and site dilution due to Ti doping oppose the previous effect. As a result, MIT is disappeared and resistivity of the system throughout the temperature increases with Ti. The nature of the conduction mechanism at low temperature follows power law like variation. As (text{Ti}^{4+}) is nonmagnetic, the introduction of Ti at Ir site dilutes the magnetic interaction at Ir octahedral network, which in turn decreases the magnetic moment and magnetic frustration in the system though the magnetic irreversibility temperature ((text{T}_{{irr}})) is hardly affected by Ti.</div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s00339-025-08357-6.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First-principles predictions on the ground structures and charge carrier mobility of two-dimensional MoOS monolayers

IF 2.5 4区材料科学

Applied Physics A Pub Date : 2025-03-13 DOI: 10.1007/s00339-025-08390-5

Dawei Zhou, Pan Zhang, Shihai Fu, Chunying Pu

{"title":"First-principles predictions on the ground structures and charge carrier mobility of two-dimensional MoOS monolayers","authors":"Dawei Zhou, Pan Zhang, Shihai Fu, Chunying Pu","doi":"10.1007/s00339-025-08390-5","DOIUrl":"10.1007/s00339-025-08390-5","url":null,"abstract":"<div>Substitution of elements with the same main group has been proven to be an effective strategy for the functionalization and synthesis of new two-dimensional materials. In this study, we focused on replacing the sulfur elements in the classic two-dimensional material MoS2 with oxygen elements, resulting in the formation of stable 2D MoOS materials. Using particle-swarm optimization method and density functional theory calculations, we identified nine new two-dimensional MoOS structures with different space groups. Electronic structure calculations reveal that the P21/m phase exhibits metallic characteristics, while all other structures are semiconductors with band gaps ranging from 1.6 to 1.8 eV. Notably, the P3 and P31m phases were identified as direct band-gap semiconductors. In addition, we conducted a detail study on the carrier mobility of semiconductors with the three highest cohesive energy structures Pmm2, P3 and P2. The results show that the hole mobility values of the Pmm2 phase is nearly five times that of MoS₂, which is attributed to the smaller deformation potential of the valence band maximum and moderate hole effective masses. Furthermore, the electron mobility in P3 and P2 phase has also been improved compared to MoS₂ due to the small electron effective masses. Apart from the metallic P21/m MoOS phase, the incorporation of oxygen significantly enhances the Young's modulus and shear modulus of the two-dimensional semiconducting MoOS, indicating stronger Mo–O and Mo-S bonds. Our work shows that oxygenation can significantly alter the physical and chemical properties of two-dimensional MoS2, forming stable two-dimensional MoOS materials with diverse band-gaps, superior carrier mobility, and improved mechanical properties compared to MoS2.</div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143612328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The influence of different complex perovskite compounds on the structure and electrical properties of PZT-based quaternary high-power piezoelectric ceramics

IF 2.5 4区材料科学

Applied Physics A Pub Date : 2025-03-13 DOI: 10.1007/s00339-025-08409-x

Xingfeng Xu, Yongli Zhang, Lin Wang, Shujie Liang, Xinpei Dong, Jiangtao Zeng

引用次数: 0