Applied Physics APub Date : 2025-02-17DOI: 10.1007/s00339-025-08292-6
Shilpa Thakur, K. Thanigai Arul, Sunil Singh Kushvaha, R. C. Meena, Chung-Li Dong, Senthil Kumar Muthusamy, Asokan Kandasami
{"title":"Synthesis and characterization of tungsten diselenide thin films by the two-step method","authors":"Shilpa Thakur, K. Thanigai Arul, Sunil Singh Kushvaha, R. C. Meena, Chung-Li Dong, Senthil Kumar Muthusamy, Asokan Kandasami","doi":"10.1007/s00339-025-08292-6","DOIUrl":"10.1007/s00339-025-08292-6","url":null,"abstract":"<div><p>Fabrication of thin films of WSe<sub>2</sub> is challenging and various methods are being explored. This study investigates the thermoelectric properties of tungsten diselenide thin films. The thin films are fabricated on Si substrates by using two-step processes. Here, the selenization of DC sputtered W thin films was carried out at different temperatures in the range of 400 to 500<sup>o</sup>C in the steps of 50<sup>o</sup>C. The crystal structure is found to be hexagonal and crystallite sizes increase with the selenization temperature. The morphology of the thin films selenized at 400<sup>o</sup>C shows no separated particles while raising the selenization temperature from 450<sup>o</sup>C to 500 °C uniform distribution of particles is observed. The shape of the particles was found spherical and rod-like. The Raman spectra show four modes: E<sub>1g,</sub><span>(:{text{E}}_{2text{g}}^{1})</span><sub>,</sub> A<sub>1g</sub>, and <span>(:{text{B}}_{2text{g}}^{1})</span>. Here, <span>(:{text{B}}_{2text{g}}^{1})</span> is associated with the interlayer interaction. The electrical resistivities of these thin films exhibit the conduction mechanism of the band conduction model. The highest Seebeck coefficient was reported for S500 (-9.15µV/K). Also, the power factor of S500 is the highest i.e. 13.4 Χ 10<sup>− 5</sup>µW/mK<sup>2</sup> This study shows the potential use of the selenization process to fabricate the WSe<sub>2</sub> thin films and optimize temperature for better thermoelectric properties.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Applied Physics APub Date : 2025-02-17DOI: 10.1007/s00339-025-08296-2
Hsin-Yi Tsai, Yu-Hsuan Lin, Kuo-Cheng Huang, Chen-Ju Lee, J. Andrew Yeh, Yi Yang, Chien-Fang Ding
{"title":"Precision material removal and hardness reduction in silicon carbide using ultraviolet nanosecond pulse laser","authors":"Hsin-Yi Tsai, Yu-Hsuan Lin, Kuo-Cheng Huang, Chen-Ju Lee, J. Andrew Yeh, Yi Yang, Chien-Fang Ding","doi":"10.1007/s00339-025-08296-2","DOIUrl":"10.1007/s00339-025-08296-2","url":null,"abstract":"<div><p>Silicon carbide (SiC), as a key material in the third-generation semiconductor industry, holds critical importance due to its superior thermal conductivity, high breakdown voltage, and wide bandgap. However, the conventional chemical mechanical polishing (CMP) process used in SiC wafer manufacturing is time-consuming and resource-intensive, involving significant material consumption and prolonged processing times. In this study, we explored the application of laser-assisted dry ablation as a pre-treatment for CMP. The experimental results showed that the single laser ablation depth of SiC is about 2 μm, and demonstrated that a laser spot overlap rate between 30% and 60% can generate a relatively lower surface roughness of SiC. This optimal range of overlap ensures a smoother ablation process, minimizing the irregularities on the SiC wafer surface. After a single pass of laser dry ablation, SiC hardness can be reduced to less than 3% of its original value, while material removal depth can be precisely controlled by adjusting the number of laser passes. With 50 repetitions, a material removal depth of nearly 30 μm was achieved. This reduction in hardness and enhanced material removal directly contribute to improve the efficiency of subsequent CMP processes by reducing polishing time and wear on grinding heads. In addition, after more than 5 times of laser treatment and then wet grinding, the thickness achievement rate can be increased from 73 to 93%. These results provide the important academic reference value. The integration of laser-assisted ablation into SiC wafer processing presents significant advantages in terms of increasing production throughput and reducing overall manufacturing costs. By simplifying the polishing steps and minimizing consumable usage, this approach offers a promising avenue for industrial applications, particularly in enhancing SiC wafer yield and optimizing semiconductor production workflows.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s00339-025-08296-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Applied Physics APub Date : 2025-02-17DOI: 10.1007/s00339-025-08325-0
Lei Li, Yongze Cao, Guojian Li, Sai Xu, Baojiu Chen
{"title":"Enhancing upconversion luminescence intensity of BiTa7O19:Er3+/Yb3+/Mo4+/Sb by doping Gd3+, La3+ or Lu3+","authors":"Lei Li, Yongze Cao, Guojian Li, Sai Xu, Baojiu Chen","doi":"10.1007/s00339-025-08325-0","DOIUrl":"10.1007/s00339-025-08325-0","url":null,"abstract":"<div><p>Based on the previous optimal concentration of Er<sup>3+</sup>/Yb<sup>3+</sup>/Mo<sup>4+</sup>/Sb co-doped BiTa<sub>7</sub>O<sub>19</sub> (BTO), Gd<sup>3+</sup>, La<sup>3+</sup> or Lu<sup>3+</sup> is planned to be doped into BTO: Er<sup>3+</sup>/Yb<sup>3+</sup>/Mo<sup>4+</sup>/Sb for further improving the upconversion luminescence (UCL) intensity under 980 nm laser excitation. These samples are prepared by solid phase sintering. The green UCL integral intensity of Gd<sup>3+</sup>, La<sup>3+</sup> or Lu<sup>3+</sup> doping samples reaches 2.87, 2.67 and 2.52 times than that of β-NaYF<sub>4</sub>:Er<sup>3+</sup>/Yb<sup>3+</sup>, respectively. It can be attributed to the change in Er<sup>3+</sup>/Yb<sup>3+</sup> doped site’ symmetry, bandgap increases and local structure changes. The maximum absolute sensitivity (S<sub>A</sub>) and relative sensitivity (S<sub>R</sub>) is got as 0.01098 K<sup>− 1</sup> at 356 K and 0.00776 K<sup>− 1</sup> at 303 K, respectively. Gd<sup>3+</sup>, La<sup>3+</sup> or Lu<sup>3+</sup> doping BTO: Er<sup>3+</sup>/Yb<sup>3+</sup>/Mo<sup>4+</sup>/Sb can be applied in luminescence display and temperature sensing.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Study on the correlation between structures and comprehensive properties of hafnium nitride films: insights from varying nitrogen/argon ratios","authors":"Shunuo Bian, Xinmeng Wu, Chunyan Chen, Yaohong Jiang, Junhua Xu","doi":"10.1007/s00339-025-08333-0","DOIUrl":"10.1007/s00339-025-08333-0","url":null,"abstract":"<div><p>In recent years, hafnium nitride films have demonstrated remarkable potential in numerous fields on account of their stability and resistance properties. In this study, a series of Hf-N films were fabricated by magnetron sputtering technology. The impacts of the Ar/N<sub>2</sub> ratio on the micro-morphology and microstructure of the films were investigated, and the relationship between the film properties and its microstructure was further analyzed. It was observed that the surface morphology of the Hf-N films, which grew in a columnar crystal form, became denser with the elevation of the Ar/N<sub>2</sub> ratio. When the Ar/N<sub>2</sub> ratio was increased to 50:2.5, the composition of the film transformed into a single HfN phase, and this single-phase composition remained unaltered within a wide range of nitrogen flow. We discovered that the compressive stress and texture coefficient significantly contributed to enhancing the nanohardness of the films. Specifically, when the Ar/N<sub>2</sub> ratio was 50:2.5, the film exhibited a maximum hardness value of 28.4 GPa along with an elastic recovery value of up to 63.1%. After undergoing high-temperature oxidation, the film maintained a stable structure and possessed good oxidation resistance. Moreover, its corrosion resistance was two orders of magnitude higher than that of the substrate material.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Applied Physics APub Date : 2025-02-17DOI: 10.1007/s00339-025-08308-1
Muhammad Zeeshan, Soumaya Gouadria, Fatma Alharbi, M. Waqas Iqbal, Muhammad Arslan Sunny, Haseebul Hassan, N. A. Ismayilova, Hussein Alrobei, Yazen. M. Alawaideh, Ehtisham Umar
{"title":"Hierarchical nanostructuring of PCN-222/NiSe2@PANI composites for enhanced electrochemical performance in supercapattery and hydrogen evolution reaction applications","authors":"Muhammad Zeeshan, Soumaya Gouadria, Fatma Alharbi, M. Waqas Iqbal, Muhammad Arslan Sunny, Haseebul Hassan, N. A. Ismayilova, Hussein Alrobei, Yazen. M. Alawaideh, Ehtisham Umar","doi":"10.1007/s00339-025-08308-1","DOIUrl":"10.1007/s00339-025-08308-1","url":null,"abstract":"<div><p>The supercapattery integrates the rapid power output of supercapacitors (SCs) with the substantial energy storage capacity typical of batteries. Metal-organic frameworks (MOFs) offer a stable porous structure that enhances efficient ion transport through strong metal-organic linkages. Metal diselenides contribute high conductivity and stability, strengthening the composite’s energy and power densities. Polyaniline (PANI) provides pseudocapacitive behavior, further improving charge storage. This study presents a PCN-222/NiSe<sub>2</sub>@PANI composite synthesized hydrothermal, ensuring strong material integration and uniform distribution. Surface morphology and phase purity, analyzed by SEM and XRD, confirmed structural uniformity and stability. Electrochemical testing revealed a specific capacity (Qs) of 2449 ± 5 C/g at 2.0 A/g in a tri-electrode configuration. A two-electrode supercapattery, fabricated using PCN-222/NiSe<sub>2</sub>@PANI as the anode and activated carbon (AC) as the cathode, achieved an energy density of 68 Wh/kg and a power density of 900 W/kg, with 87.6% capacity retention over 8,000 GCD cycles, surpassing standard benchmarks. The power-law analysis yielded <i>b</i>-fitting values between 0.58 and 0.75, indicating hybrid charge storage. The composite exhibited promising hydrogen evolution reaction (HER) activity, with an overpotential of 87 ± 5 mV and a Tafel slope of 78 ± 5 mV/dec, showing high catalytic efficiency and favorable charge transfer kinetics. These results position PCN-222/NiSe<sub>2</sub>@PANI as a strong contender for high-performance supercapattery applications, advancing energy storage and conversion technologies.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Effect of manganese doping on the bioactivity and antioxidant activity of bioglass","authors":"Chunrong Yang, Huazhong Wu, Xiaojie Gao, Congfa Zhang","doi":"10.1007/s00339-025-08343-y","DOIUrl":"10.1007/s00339-025-08343-y","url":null,"abstract":"<div><p>Manganese is an essential micronutrient for all living organisms and plays a crucial role in bone metabolism. The purpose of this study was to investigate the effects of manganese on the structure and chemical dissolution behavior of bioactive glasses, as well as its effects on in vitro biological activity and oxidative stress levels. Manganese doped bioglass was synthesized by sol-gel method. Its structure was studied using FTIR combined with Raman spectroscopy. The in vitro mineralization performance in simulated body fluids was analyzed using X-ray diffraction, FTIR and ultraviolet spectroscopy. The antioxidant capacity of manganese doped bioglass was studied using MC3T3-E1 cells against H<sub>2</sub>O<sub>2</sub> induced damage. The doping of manganese caused slight changes in the bioglass structure, and enabled it to obtain crystalline phases of calcium manganese silicate and calcium silicate through calcination. All bioglass exhibited good ability to form hydroxyapatite. Compared to the parent bioglass, manganese doping significantly enhanced the dissolution and biomineralization behavior. The protective potential of manganese doped bioglass exhibited dose-dependent effects within a limited concentration range, with excellent anti-oxidant ability observed at low doses of doping. Manganese doped bioglass has potential applications in bone regeneration and healing.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Applied Physics APub Date : 2025-02-17DOI: 10.1007/s00339-025-08301-8
Bowen Miao, Lifei Wang, Tianwu Zhang, Zhen Zhang, Chenchong Wang
{"title":"Fabrication of micro-nano gradient wettability surface by nanosecond laser and thermal oxidation","authors":"Bowen Miao, Lifei Wang, Tianwu Zhang, Zhen Zhang, Chenchong Wang","doi":"10.1007/s00339-025-08301-8","DOIUrl":"10.1007/s00339-025-08301-8","url":null,"abstract":"<div><p>Surfaces with gradient wetting properties are crucial for alleviating water scarcity and efficient recycling, as it can be used for directed transport and collection of water. However, a major challenge is how to efficiently manufacture multi-scale micro-nano structures to increase surface wetting gradients. In this study, a composite processing that combines nanosecond laser oblique incidence and thermal oxidation to fabricate microgroove-nanowire (CuO) hierarchical structures with gradient wettability is proposed. Laser oblique incidence scanning is employed to fabricate microgroove structures with gradient geometric dimensions and chemical composition on the Cu surface, which in turn induced gradient wetting properties and facilitated the directed movement of droplets. The effect of scanning times on gradient structure and its wetting properties is also discussed in detail. To further enhance the directional flow distance of droplets, dense CuO nanowires are grown on the surface of microgrooves through thermal oxidation treatment, forming a micro-nano dual scale structure. The growth mechanism of nanowires is revealed, and the effects of thermal oxidation temperature and duration on nanowire growth and gradient wetting properties are discussed in detail. The gradient in contact angles, in conjunction with the variation in energy barriers in different directions, leads to more pronounced anisotropic wetting. Compared to the single microgroove structures, the directional flow distance of microgroove-nanowire dual scale structure is increased by about 50%. The proposed laser and thermal oxidation composite process provides a new strategy for efficiently manufacturing micro-nano dual scale structures and further enhancing surface gradient wetting performance.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Applied Physics APub Date : 2025-02-17DOI: 10.1007/s00339-025-08314-3
Zifeng Ni, Zongyu Chen, Guomei Chen, Xueyu Lu, Guohua Chen, Ming Liu
{"title":"Influence of the anisotropy of single crystal 4H-SiC on contact responses during nanoindentation and microscratch","authors":"Zifeng Ni, Zongyu Chen, Guomei Chen, Xueyu Lu, Guohua Chen, Ming Liu","doi":"10.1007/s00339-025-08314-3","DOIUrl":"10.1007/s00339-025-08314-3","url":null,"abstract":"<div><p>The effect of anisotropy, which is crucial for manufacturing single crystals, was investigated in this study by performing nanoindentation experiments on the Si/C plane of single crystal 4H-SiC with the edge of Berkovich indenter toward with two different crystal orientations of <span>([11overline{2} 0])</span>/<span>([1overline{1} 00])</span>. On the Si plane, when the edge was toward crystal orientation <span>([11overline{2} 0])</span>/<span>([1overline{1} 00])</span>, the indentation hardness is 39.37/39.77 GPa, the elastic modulus is 528.16/513.88 GPa, and the fracture toughness is 3.286/2.609 MPa·m<sup>1/2</sup>. On the C plane, when the edge was toward crystal orientation <span>([11overline{2} 0])</span>/<span>([1overline{1} 00])</span>, the indentation hardness is 43.66/41.91 GPa, the elastic modulus is 522.24/546.54 GPa and the fracture toughness is 2.826/2.705 MPa·m<sup>1/2</sup>. At the same time, the Vickers hardness crack induction method was used to calculate the fracture toughness, regardless of the Si or C plane, the fracture toughness value of the crystal orientation <span>([11overline{2} 0])</span> is generally greater than that <span>([1overline{1} 00])</span>. Molecular dynamics (MD) indentation simulations were carried out with the indenter edge facing different crystal directions of the Si plane. There is obvious anisotropy in the depth of the amorphous atomic layer, the number and proportion of dislocation nucleation, and the shear strain expansion. Although microscratch experiments combined with the analysis of scratch variables and the optical topography of scratches, it is concluded that the scratch deformation damage towards the crystal orientation <span>([1overline{1} 00])</span> is smaller. This study can provide theoretical guidance for the ultra-precision machining of the anisotropy of 4H-SiC crystal structure.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A reconfigurable linear polarizer integrated with four critical linear polarizations","authors":"Tingfeng Xu, Hongcheng Zhou, Ping Wang, Zhihao Jiang, Zhongming Yan, Yu Wang","doi":"10.1007/s00339-025-08340-1","DOIUrl":"10.1007/s00339-025-08340-1","url":null,"abstract":"<div><p>This paper presents a metasurface based reconfigurable transmissive linear polarizer (TLP) that demonstrates four critical polarization states: 0°, ± 45°, and 90°, with a polarization angle error of ± 10% or less across different states. The polarizer comprises a partially reflective surface (PRS), a polarization deflection surface (PDS), and a polarization selection surface (PSS). The switching among these four polarization states is achieved by controlling the surface currents on the PDS and PSS using PIN diodes, in conjunction with the functional interplay of each layer. Layer-by-layer design guidelines are provided, elucidating the polarization conversion mechanism. A prototype has been successfully fabricated and tested, with the measurement results exhibiting good agreement with the simulation outcomes. The measurements reveal that, upon illumination by an x-polarized wave, the polarizer can perform four distinct functionalities within an overlapping bandwidth of 2.2–2.6 GHz (16.7%), maintaining a transmission coefficient above − 3 dB across this entire frequency range. This polarizer serves as a valuable reference for polarization control technology in single-polarized antennas, holding promising potential for applications in fields such as wireless communication and electronic countermeasures.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Applied Physics APub Date : 2025-02-16DOI: 10.1007/s00339-025-08323-2
M. Ku, L. G. Daza, A. Valadez-Gonzalez, I. V. Perez-Quintana, R. Castro-Rodríguez
{"title":"Tuning of surface properties of AZO thin films through substrate configuration variation","authors":"M. Ku, L. G. Daza, A. Valadez-Gonzalez, I. V. Perez-Quintana, R. Castro-Rodríguez","doi":"10.1007/s00339-025-08323-2","DOIUrl":"10.1007/s00339-025-08323-2","url":null,"abstract":"<div><p>This study investigates the influence of substrate configuration variations on the surface properties and contact angle of nanostructured aluminum-doped zinc oxide (AZO) thin films deposited via RF magnetron sputtering on glass substrates at room temperature. Three distinct substrate configurations—Standard Planar Position (SPP), Glancing Angle Deposition (GLAD), and Twisted Standard Planar Position (TSPP)—were employed to explore their impact on the films structural morphology and crystallinity, characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD). Wettability, characterized by contact angle and surface energy, was assessed using static measurements with a range of probe liquids, including water, diiodomethane, and ethylene glycol. Our findings demonstrate the ability to tailor AZO films to achieve specific crystalline orientations without altering the growth temperature. Substrate rotation and configuration modifications significantly impacted AZO film surface energies, revealing enhanced hydrophilicity evidenced by reduced contact angles compared to control samples. Using the Owens–Wendt-Kaelble method, we quantified both polar and dispersive surface energy components, observing significant increases in both for AZO thin films. These results highlight heightened surface reactivity, suggesting potential applications in diverse wetting-dependent contexts, such as reinforcement of polymeric materials and self-cleaning surfaces and anti-reflective coatings for photovoltaic devices.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}