{"title":"Enhancement of mechanical performance and reduction in thermal conductivity of Mg2Si-based thermoelectric nanocomposites through rGO addition","authors":"Abhigyan Ojha, Unanda Nanda, Abhishek Pradhan, Sivaiah Bathula","doi":"10.1007/s00339-024-08061-x","DOIUrl":"10.1007/s00339-024-08061-x","url":null,"abstract":"<div><p>Thermoelectric materials-based devices are used to convert heat energy into electrical energy. Magnesium silicide-based thermoelectric-based devices are considered commercially viable due to their low cost compared to other contemporary materials. The current study investigates the influence of Sb doping on the thermoelectric properties of the Mg<sub>2.15</sub>Si<sub>0.28</sub>Sn<sub>0.714</sub>Sb<sub>0.006</sub> (Sample-A) compound with an excess Mg content (7.5 mol %). The excess Mg induces point defects through interstitial Mg and Si/Sn vacancies, significantly enhancing the electron concentration (n<sub>e</sub>). Moreover, Sb is recognized as an effective single-electron donor in Mg<sub>2</sub>Si-based materials, leading to notable increases in n<sub>e</sub> and electrical conductivity. Consequently, in the current investigation, excess Mg combined with appropriate Sb doping, resulted in the selection of Mg<sub>2.15</sub>Si<sub>0.28</sub>Sn<sub>0.714</sub>Sb<sub>0.006</sub> (Sample-A), which exhibited high n<sub>e</sub> and superior thermoelectric performance. Further, the current study was extended by incorporating 3 vol.% of reduced graphene oxide (rGO) into Mg<sub>2.15</sub>Si<sub>0.28</sub>Sn<sub>0.714</sub>Sb<sub>0.006</sub> + 3 vol.% rGO (Sample-B) to enhance mechanical performance and reduce thermal conductivity (k). Consequently, Sample-B showed a ∿ 28% increase in fracture toughness (from 1.48 to 1.9 MPa√m) and a ∿ 137% improvement over conventional Mg<sub>2</sub>Si. Moreover, the inclusion of rGO resulted in a substantial reduction in k ∿ 40% in the mid-temperature range, due to intensified phonon scattering caused by the higher interface density within the matrix. However, adding more than 3 vol.% rGO negatively impacts both thermoelectric and mechanical properties by obstructing the charge carriers. Therefore, achieving an optimal balance between rGO addition and compositional modulation is essential to enhance both thermoelectric and mechanical performance in these composites.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"130 12","pages":""},"PeriodicalIF":2.5,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Applied Physics APub Date : 2024-11-20DOI: 10.1007/s00339-024-08073-7
Jaume Llibre, Claudia Valls
{"title":"On the dynamics of a hyperjek memristive system","authors":"Jaume Llibre, Claudia Valls","doi":"10.1007/s00339-024-08073-7","DOIUrl":"10.1007/s00339-024-08073-7","url":null,"abstract":"<div><p>From the pioneer work of Chua and Kang many researches have worked proposing different memristive systems having different applications in distinct areas depending on their properties and now it is a very active research subject mainly due to their applications Here we study the dynamics of the hyperjerk memristive system given by the fourth order ordinary differential equation <span>(ddddot{x} =-ddot{x} - a dddot{x} -b dot{x}^2 dddot{x}-(1+x)dot{x})</span>, previously studied by several authors showing that this system exhibits chaos for some values of its parameters <i>a</i> and <i>b</i>, as usual every dot denotes one derivative with respect to the time <i>t</i>. This system has a line filled with equilibria and it has a polynomial first integral <i>H</i>. Until now there are no analytical results on the periodic orbits of this differential system, and in that paper we fill that hole. Writing this differential equation as a first order differential system in <span>(mathbb {R}^4)</span>, first we prove that this differential system has a zero-Hopf equilibrium, i.e. an equilibrium point such that the Jacobian matrix of the differential system evaluated at such equilibrium has a zero with multiplicity two, and one pair of conjugated purely imaginary eigenvalues. Second, we show that from this zero-Hopf equilibrium bifurcate two cylinders filled with periodic orbits parameterized by the levels of the first integral <i>H</i>. Moreover, the three-dimensional system obtained restricting the differential system in <span>(mathbb {R}^4)</span> to the invariant hypersurface <span>(H=h)</span> for <span>(h>-1/2)</span>, exhibits two Hopf bifurcations producing periodic orbits in the center manifold of that restriction.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"130 12","pages":""},"PeriodicalIF":2.5,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Applied Physics APub Date : 2024-11-20DOI: 10.1007/s00339-024-08028-y
Zsolt Kasztovszky, András Markó, Szende Sándor, T. Katalin Biró
{"title":"The applicability of prompt-gamma activation analysis to obsidian provenance studies—The case of a strange find: a blade from Csongrád (South-East Hungary)","authors":"Zsolt Kasztovszky, András Markó, Szende Sándor, T. Katalin Biró","doi":"10.1007/s00339-024-08028-y","DOIUrl":"10.1007/s00339-024-08028-y","url":null,"abstract":"<div><p>In the last twenty years, prompt-gamma activation analysis (PGAA) turned out to be successful in provenance research of obsidians, i.e. in the identification of possible raw material sources of various archaeological objects. Since the early 2000s, a significant database has been built at the Budapest Neutron Centre, which includes compositional data of about 500 geological and archaeological obsidian items, representing the major European and Mediterranean sources. Besides the straightforward cases of provenance studies, however, there are still a few difficult questions to answer. During the excavations of a unique grave at Csongrád (SE Hungary), a long transparent obsidian blade was found together with other objects. The grave was dated to 4370–4239 (1σ, 68.2%) cal. BC, belonging to the first wave of the ‘Pit Grave’ culture and having strong eastern contacts. Following the first energy dispersive X-ray spectroscopy (EDS) measurement in 1983, the blade was compared to the Carpathian 1 (Slovakian) type raw material. In 2019, PGAA and portable X-Ray Fluorescence analysis have been done on the same piece. Based on the first results, the Csongrád specimen, unlike other archaeological samples studied so far, was not possible to unambiguously associate with any of the known obsidian types. In order to clarify the provenance of the Csongrád blade, we have extended our database with more geological reference data from both sides of the Caucasus (i.e. from Armenia and Georgia), which are the closest outcrops to the main distribution region of the Pit Grave Culture in the NE part of the Black Sea. Until now, still no reassuring explanation is available concerning the provenance of the object with unusual composition.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"130 12","pages":""},"PeriodicalIF":2.5,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s00339-024-08028-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Applied Physics APub Date : 2024-11-19DOI: 10.1007/s00339-024-08042-0
M. M. El-Desoky, Ibrahim Morad, Shereef A. Fareed, Amany E. Harby
{"title":"Room temperature superparaelectric state in 20BaTiO3-60V2O5-20Bi2O3 glass for capacitive energy storage applications","authors":"M. M. El-Desoky, Ibrahim Morad, Shereef A. Fareed, Amany E. Harby","doi":"10.1007/s00339-024-08042-0","DOIUrl":"10.1007/s00339-024-08042-0","url":null,"abstract":"<div><p>Materials with high dielectric constant exhibit excellent charge storage capacity, making them favorable solutions for next-generation dielectric capacitors. The glass system with the composition of 20BaTiO<sub>3</sub>-60V<sub>2</sub>O<sub>5</sub>-20Bi<sub>2</sub>O<sub>3</sub> was prepared by conventional melt quenching technique. The glassy nature of the sample was confirmed by using DSC and XRD measurement while the existence of nano polar cluster inside the glass matrix was confirmed using HRTEM. The real permittivity (<i>ε</i><sup></sup>) value shows two peaks in which the dielectric constant gradually increases up to a maximum value (<i>ε</i><sub><i>m</i></sub>) with the increase in temperature, and then it smoothly decreases, suggesting two phase transitions around 180 and 280 <sup>◦</sup> C. The measurements of the P–E hysteresis loop illustrated energy storage density of 124 mJ/cm<sup>3</sup> and energy storage efficiency about 84% at room temperature. The glass sample shows superparaelectric behavior confirmed by the dielectric and P-E loop measurements. For high-energy storage applications, dipolar glasses have more outstanding potential than conventional ceramic dielectrics. Eventually, the glass matrix maintains high breakdown strength and can effectively stabilize nanocluster phases. So, we consider the present glass sample to be a good candidate for capacitive energy storage applications.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"130 12","pages":""},"PeriodicalIF":2.5,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s00339-024-08042-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Applied Physics APub Date : 2024-11-18DOI: 10.1007/s00339-024-08055-9
Kuo Shen, Ruiting Zhang, Yahong Jin, Yanmei Li, Yihua Hu
{"title":"Photochromism in Sm3+-doped inorganic semiconductor oxide CaBiNb2O9 induced by ultraviolet light irradiation","authors":"Kuo Shen, Ruiting Zhang, Yahong Jin, Yanmei Li, Yihua Hu","doi":"10.1007/s00339-024-08055-9","DOIUrl":"10.1007/s00339-024-08055-9","url":null,"abstract":"<div><p>Semiconductor oxides are widely used in the field of optical materials due to their broad spectral response, tunable structure, low cost, high chemical and thermal stability, among other advantages. The design and fabrication of photochromic materials in semiconductor oxides have shown tremendous potential in various fields such as optoelectronic displays, optical storage, and light-stimulated responses. In this work, we have designed and fabricated a novel inorganic photochromic material by doping Sm<sup>3+</sup> ions into the semiconductor oxide CaBiNb<sub>2</sub>O<sub>9</sub> (CBN). The introduction of Sm<sup>3+</sup> ions induces the formation of oxygen vacancies and cationic vacancies in CBN, greatly enhancing the photochromic effect of the matrix. CaBiNb<sub>2</sub>O<sub>9</sub>: Sm<sup>3+</sup> (CBN: Sm) can achieve reversible photochromic response through 254 nm light irradiation and 350 ℃ thermal stimulation, and exhibit excellent stability and fatigue resistance. The photochromic process and performance of the CBN: Sm materials were characterized, and the potential mechanisms were analyzed and discussed. The conducted research and insights will provide support for other researchers in the design and fabrication of photochromic materials based on semiconductor oxides.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"130 12","pages":""},"PeriodicalIF":2.5,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Applied Physics APub Date : 2024-11-18DOI: 10.1007/s00339-024-08031-3
Layla Badr
{"title":"Electrical impedance characterization of (AgCl)0.05(AgPO3)0.95 and (AgBr)0.05(AgPO3)0.95 glassy systems over 5 K to 300 K temperature range","authors":"Layla Badr","doi":"10.1007/s00339-024-08031-3","DOIUrl":"10.1007/s00339-024-08031-3","url":null,"abstract":"<div><p>The electrical properties of doped silver halide silver metaphosphate glasses; (AgCl)<sub>0.05</sub>(AgPO<sub>3</sub>)<sub>0.95</sub> and (AgBr)<sub>0.05</sub>(AgPO<sub>3</sub>)<sub>0.95</sub> are investigated. The amorphous character of the glasses is determined by differential scanning calorimetry. The samples are characterized using complex impedance spectroscopy in order to investigate the frequency and temperature dependence of their conductivities. Insights into the conduction processes are obtained. Four conductivity regimes are identified, the dc conductivity which follows an Arrhenius law, the dispersed conductivity which follows Jonscher power law, the Nearly Constant Loss conductivity which shows a slight temperature dependence, and the low-temperature Nearly Constant Loss with no thermal activation. The foundation and the change of the main conductivity mechanism from the translational to the localized electronic as the temperature is decreased are discussed. The difference of ionic mobility in (AgCl)<sub>0.05</sub>(AgPO<sub>3</sub>)<sub>0.95</sub> and (AgBr)<sub>0.05</sub>(AgPO<sub>3</sub>)<sub>0.95</sub> glass matrices is detected only in the difference in translational motion, while the localized motion is the same for the two glasses.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"130 12","pages":""},"PeriodicalIF":2.5,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Applied Physics APub Date : 2024-11-18DOI: 10.1007/s00339-024-08040-2
Piotr Ryś, Jacek Kowalczyk, Maja Mroczkowska-Szerszeń, Marcin Kaczkan, Karolina Majewska, Piotr Moszczyński, Wojciech Pudełko, Maciej Siekierski
{"title":"Dispersion phenomena in EIS and DIS spectra of porous materials and their representation as transmission line bases ‘diffusion’ elements– part II - a case study of proton conductors","authors":"Piotr Ryś, Jacek Kowalczyk, Maja Mroczkowska-Szerszeń, Marcin Kaczkan, Karolina Majewska, Piotr Moszczyński, Wojciech Pudełko, Maciej Siekierski","doi":"10.1007/s00339-024-08040-2","DOIUrl":"10.1007/s00339-024-08040-2","url":null,"abstract":"<div><p>Porosity of materials, understood as an overall averaged parameter or as the pore-size distribution related data is an important quality of numerous functional materials including proton conductive glasses. While most of the existing techniques applied for its assessment cannot be used to monitor the behaviour of ‘live’ systems in operando conditions, it is possible to use Electrochemical Immittance Spectroscopy (EIS) for this purpose. Nevertheless, analysis of these systems still requires an approximation made using transmission lines based models, which can be equated to specific diffusion elements parameters, which can in turn be related to qualities of the porous material investigated. The changes of these parameters can be correlated with various processes– such as dehydration and phase transitions or to the material’s processing history. In this part of the material we present a case study of highly grinded, mechanochemically processed powder-pressed proton conductors: phosphate-silicate glass and two uranyl based compounds– hydroxy phosphate (HUP) and hydroxy arsenate, delivering proof that the dispersive properties of proton transporting materials can be correlated with their dehydration processes, which were followed by means of FT-IR and terahertz time domain spectroscopies. </p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"130 12","pages":""},"PeriodicalIF":2.5,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s00339-024-08040-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Applied Physics APub Date : 2024-11-18DOI: 10.1007/s00339-024-08035-z
Arebat Ryad Alhadei Mohamed, Mohd Mustafa Awang Kechik, Chen Soo Kien, Lim Kean Pah, Hussien Baqiah, Khairul Khaizi Mohd Shariff, Yap Siew Hong, Hoo Keong Peh, Abdul Halim Shaari, Syahrul Humaidi, Muralidhar Miryala
{"title":"Enhancing superconducting properties of YBa2Cu3O7- ẟ through Nd2O3 addition prepared using modified thermal decomposition method","authors":"Arebat Ryad Alhadei Mohamed, Mohd Mustafa Awang Kechik, Chen Soo Kien, Lim Kean Pah, Hussien Baqiah, Khairul Khaizi Mohd Shariff, Yap Siew Hong, Hoo Keong Peh, Abdul Halim Shaari, Syahrul Humaidi, Muralidhar Miryala","doi":"10.1007/s00339-024-08035-z","DOIUrl":"10.1007/s00339-024-08035-z","url":null,"abstract":"<div><p>Polycrystalline YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7−δ</sub> (Y-123) samples with different varying weight percentages (x = 0.0, 0.1, 0.3, 0.5, 1.0, and 5.0 wt.%) of neodymium oxide (Nd<sub>2</sub>O<sub>3</sub>) addition have been successfully synthesized using a modified thermal decomposition method (DM) under ambient conditions. X-ray diffraction (XRD) analysis revealed favorable orthorhombicity values (~ 0.008) for the Y-123 crystal structure, and an estimated oxygen content close to the theoretical value (~ 6.8), along with the presence of light secondary phases such as Y<sub>2</sub>BaCuO<sub>5</sub> (Y-211) and BaCuO<sub>2</sub>. For FESEM analysis, it was found that 5.0 wt.% Nd<sub>2</sub>O<sub>3</sub> increased porosity and reduced grain size, negatively impacting superconductivity. Conversely, 0.5 wt.% Nd<sub>2</sub>O<sub>3</sub> promoted significant grain growth, leading to enhanced grain contact and a denser microstructure. Electrical resistivity measurements confirmed superconducting transitions in all samples. Notably, the 0.5 wt.% Nd<sub>2</sub>O<sub>3</sub> sample exhibited an optimal <i>T</i><sub><i>c-onset</i></sub> of 94.14 K with a narrow transition width Δ<i>T</i><sub><i>c</i></sub> of 4.04 K. In contrast, the higher 5.0 wt.% Nd<sub>2</sub>O<sub>3</sub> concentration resulted in a broader Δ<i>T</i><sub><i>c</i></sub> of 7.47 K, suggesting the lower doping provided more optimal superconducting performance. AC susceptibility measurements corroborated these findings. This DM method offers a cost-effective approach for Y-123 synthesis, with potential for further optimization through alkali metal doping to reduce costs and environmental impact.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"130 12","pages":""},"PeriodicalIF":2.5,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Applied Physics APub Date : 2024-11-18DOI: 10.1007/s00339-024-08080-8
N. Yusop, S. N. Waheeda, E. A. Alias, M. E. A. Samsudin, M. Ikram Md Taib, N. Zainal
{"title":"Ge-doping in polycrystalline GaN layer through electron beam evaporator deposition with successive ammonia annealing","authors":"N. Yusop, S. N. Waheeda, E. A. Alias, M. E. A. Samsudin, M. Ikram Md Taib, N. Zainal","doi":"10.1007/s00339-024-08080-8","DOIUrl":"10.1007/s00339-024-08080-8","url":null,"abstract":"<div><p>We studied the impact of Ge-doping on material properties of polycrystalline GaN layers with different Ge percentages of 2%, 5% and 10%. The carrier concentration for the undoped polycrystalline GaN layer is ~ 6 × 10<sup>19</sup> cm<sup>− 3</sup>, and the value increases up to ~ 1.1 × 10<sup>21</sup> cm<sup>− 3</sup> by the Ge-doping with 5% of Ge. Meanwhile, the electron mobility is the lowest at 98.6 cm<sup>2</sup>/Vs with 5% of Ge. The result is comparable to some reported Ge-doped single crystal GaN layers with the carrier concentration of above 10<sup>20</sup> cm<sup>− 3</sup>. Additionally, the surface of the polycrystalline GaN layer changes significantly with the Ge percentage above 5%. In particular, GaN grain protrusions and GaN grain-like rods are observed. It is found that Ge-N related compounds can form on the GaN grain-like rods. The grain protrusions and grain-like rods lead to the broadening of the Raman E<sub>2</sub> peak, indicating that the crystalline properties can be degraded by excessive Ge-doping.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"130 12","pages":""},"PeriodicalIF":2.5,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}