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RGO flakes decorated NiO nanoflowers for supercapacitor applications-synthesis and characterizations
IF 2.5 4区 材料科学
Applied Physics A Pub Date : 2025-02-21 DOI: 10.1007/s00339-025-08335-y
Dhirendra Jha, Bhargavi Somapur, Abhijit Paul, C. Kavitha, Nagaiah Kambhala
{"title":"RGO flakes decorated NiO nanoflowers for supercapacitor applications-synthesis and characterizations","authors":"Dhirendra Jha,&nbsp;Bhargavi Somapur,&nbsp;Abhijit Paul,&nbsp;C. Kavitha,&nbsp;Nagaiah Kambhala","doi":"10.1007/s00339-025-08335-y","DOIUrl":"10.1007/s00339-025-08335-y","url":null,"abstract":"<div><p>Nickel oxide (NiO) nanoflowers decorated with reduced graphene oxide (RGO) were synthesised via the cost-effective hydrothermal method, followed by calcination to form composites. Various analytical techniques including FE-SEM, XRD, UV-visible, and Raman were employed to characterize the morphological, structural, and optical properties of the specimens, respectively. Electrochemical properties of NiO nano flower and RGO-decorated NiO nanoflowers (NRGO) materials, were evaluated through cyclic voltammetry, galvanostatic charge-discharge testing, and electrochemical impedance analysis. Findings indicate that the addition of RGO enhances the reversibility of NiO as an electrode material by providing a continuous framework and more active sites for redox reactions due to its unique configuration. The specific capacitance of the NRGO3 composites reached 396 Fg<sup>− 1</sup> in a 6 M KOH electrolyte at a scan rate of 10 mV/s and has the lowest R<sub>CT</sub> value compared to others. All the samples have shown good stability with a percentage of retention of more than 80%, suggesting that, it is a good electrode material for energy storage applications.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143455524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cross-polarization converter and wavefront modulation integrated metasurface
IF 2.5 4区 材料科学
Applied Physics A Pub Date : 2025-02-20 DOI: 10.1007/s00339-025-08338-9
Tao Zhang, Danqing Zou, Shanshan Xu, Chang Ding, Hongpeng Sun, Fan-Yi Meng
{"title":"Cross-polarization converter and wavefront modulation integrated metasurface","authors":"Tao Zhang,&nbsp;Danqing Zou,&nbsp;Shanshan Xu,&nbsp;Chang Ding,&nbsp;Hongpeng Sun,&nbsp;Fan-Yi Meng","doi":"10.1007/s00339-025-08338-9","DOIUrl":"10.1007/s00339-025-08338-9","url":null,"abstract":"<div><p>A novel cross-polarized converter that receives line-polarized waves and converts them into cross-polarized ones is proposed with a 10 dB impedance bandwidth of 6.8%, based on which a 2-bit metasurface cell is constructed, which consists of only one dielectric substrate and has a cell size of only 0.14 times the electrical wavelength. The metasurface designed based on this unit can effectively beam the electromagnetic waves emitted by the horn feeder and increase the gain, which has the potential to be used in various wireless systems.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143455479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Energy- and time-efficient synthesis method: immobilization of iron (III) oxide on wires via direct heating for organic dye and chromium (VI) ion removal
IF 2.5 4区 材料科学
Applied Physics A Pub Date : 2025-02-20 DOI: 10.1007/s00339-025-08328-x
Siti Nur Asiah Mahamood, Chia-Yu Wong, Swee-Yong Pung
{"title":"Energy- and time-efficient synthesis method: immobilization of iron (III) oxide on wires via direct heating for organic dye and chromium (VI) ion removal","authors":"Siti Nur Asiah Mahamood,&nbsp;Chia-Yu Wong,&nbsp;Swee-Yong Pung","doi":"10.1007/s00339-025-08328-x","DOIUrl":"10.1007/s00339-025-08328-x","url":null,"abstract":"<div><p>The immobilization of iron (III) oxide (Fe<sub>2</sub>O<sub>3</sub>) particles on substrates through methods such as low-pressure chemical vapor deposition, hydrothermal, or chemical bath processes often entails prolonged synthesis durations (in hours if not days), substantial equipment costs, and/or elevated operational expenses due to high electrical power consumption (in kW). Indeed, high electrical power consumption is directly associated with increased CO<sub>2</sub> emissions in the generation of electrical power, especially in regions where the energy relies heavily on fossil fuels. These synthesis methods are not favored for achieving Carbon Net Zero in the year 2050. Thus, the drawbacks pose significant impediments to the widespread industrial application of Fe<sub>2</sub>O<sub>3</sub> particles as visible light-driven photocatalysts for treating organic effluents on a large scale. In this study, a rapid and innovative synthesis of Fe<sub>2</sub>O<sub>3</sub> particles immobilized on wires within a mere 10-min timeframe and consuming low electrical power (50 W.h) was demonstrated. This was achieved by the development of a novel direct heating (DH) method. The influence of heating duration on the structural, morphological, and photocatalytic properties of Fe<sub>2</sub>O<sub>3</sub> particles was investigated. These Fe<sub>2</sub>O<sub>3</sub>particles demonstrated positive photocatalytic activity, degrading 33.29% of Rhodamine B (RhB) dye and 81.4% of chromium Cr (VI) within 90 min under visible light irradiation. The good photocatalytic performance, coupled with the simplicity and cost-effectiveness of DH method, establishes a promising alternative for the development of visible light-active photocatalysts for the removal of both organic dyes and metal ions removal.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143455492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of electrolytes on electrical charge storage performance in a compost-based symmetric device
IF 2.5 4区 材料科学
Applied Physics A Pub Date : 2025-02-18 DOI: 10.1007/s00339-025-08309-0
Poonam, Vijay Kumar, Sandeep Yadav,  Chetan,  Gauri, Suhaas Gupta, Ravi Kant Choubey, S. Gaurav, Tejendra K. Gupta, Rajeev Ahuja, Sunil Kumar
{"title":"Effect of electrolytes on electrical charge storage performance in a compost-based symmetric device","authors":"Poonam,&nbsp;Vijay Kumar,&nbsp;Sandeep Yadav,&nbsp; Chetan,&nbsp; Gauri,&nbsp;Suhaas Gupta,&nbsp;Ravi Kant Choubey,&nbsp;S. Gaurav,&nbsp;Tejendra K. Gupta,&nbsp;Rajeev Ahuja,&nbsp;Sunil Kumar","doi":"10.1007/s00339-025-08309-0","DOIUrl":"10.1007/s00339-025-08309-0","url":null,"abstract":"<div><p>The prevalence of compost and its integration within the bio-circular economy, facilitating the seamless conversion of bio-waste into compost, present an auspicious avenue for the exploration of renewable energy storage solutions. Thus, the current study investigates the effect of electrolytes on faradic and non-faradic processes of charge storage in a symmetrical device design based on compost. The inquiry examines the composts as an electrode material and the influence of various current collectors (G–G, Cu–Cu and IN–IN) across distinct aqueous electrolyte environments (1 M KNO<sub>3</sub>, 1 M KCl and 1 M KOH). The findings reveal the composts’ capacity to accommodate both capacitive and non-capacitive charge storage processes within a symmetric dual-current collector apparatus, showcasing the multifaceted charge storage modalities akin to those observed in capacitors and batteries. The electrochemical assessments, conducted through cyclic voltammetry (CV), galvanostatic charge–discharge (GCD) profiling, and electrochemical impedance spectroscopy (EIS), elucidate the non-faradaic and faradaic charge storage mechanisms in terms of the charge storage efficiency, temporal characteristics of the charge and discharge cycle, specific capacitance, and specific capacity. The results obtained evince the superior charge storage capabilities of the compost samples across various electrolyte solutions relative to the aqueous media. The compost specimen featuring a C:N ratio of 145.44 in a 1 M KCl solution assembled in a symmetric G–G current collectors device exhibited the optimal electrochemical performance. At a scan rate of 100 mV/s within a potential window of ± 4.5 V, the CV studies exhibited an area under the curve of 3.3142C, a specific capacitance of 18.4mF/g and a specific capacity of 82.8 mC/g, while the GCD studies were characterised by a charging time of 51 s, a discharging time of 47.2 s, a specific capacitance of 10.4 mF/g and a specific capacity of 94.4 mC/g at an applied current of 400 mA within a potential window of ± 4.5 V.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gas sensitivity enhancement in praseodymium-doped cobalt ferrite nanoparticles: investigating humidity effects and palladium synergy
IF 2.5 4区 材料科学
Applied Physics A Pub Date : 2025-02-18 DOI: 10.1007/s00339-025-08324-1
S. Kiani, S. Salari, P. Kameli, H. Nikmanesh, M. Ranjbar
{"title":"Gas sensitivity enhancement in praseodymium-doped cobalt ferrite nanoparticles: investigating humidity effects and palladium synergy","authors":"S. Kiani,&nbsp;S. Salari,&nbsp;P. Kameli,&nbsp;H. Nikmanesh,&nbsp;M. Ranjbar","doi":"10.1007/s00339-025-08324-1","DOIUrl":"10.1007/s00339-025-08324-1","url":null,"abstract":"<div><p>The objective of this research is to explore the influence of praseodymium incorporation into cobalt ferrite nanoparticles, derived from sol-gel, on their response to hydrogen gas. Additionally, we investigated the hydroxyl scavenging capacity of praseodymium ions by comparing the results obtained at low relative humidity (RH ~ 20%) and high relative humidity (RH ~ 50%). Our findings revealed that the optimal gas sensing properties of the CoFe<sub>2 − x</sub>Pr<sub>x</sub>O<sub>4</sub> semiconductor (where x = 0, 0.02, 0.04, 0.06) were achieved with a Pr concentration of 0.02 at a working temperature of 300 °C. Scanning electron microscopy and mapping Energy-dispersive X-ray spectroscopy (EDS) analysis of Pr-doped CoFe<sub>2</sub>O<sub>4</sub> nanoparticles provided evidence for the existence of a secondary phase at higher Pr concentrations, which impacted gas-sensing performance when x &gt; 0.02. Furthermore, the addition of palladium proved to be effective in enhancing the moisture-resistant gas-sensing properties of the CoFe<sub>1.98</sub>Pr<sub>0.02</sub>O<sub>4</sub> gas sensor. The synergistic interaction between palladium and praseodymium ions was responsible for the observed enhanced anti-humidity and hydrogen gas detection characteristics.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of CuO doping on the sintering behavior and piezoelectric properties of lead-free (K0.41Na0.59)(Nb0.84Sb0.06Ta0.10)O3 ceramics
IF 2.5 4区 材料科学
Applied Physics A Pub Date : 2025-02-18 DOI: 10.1007/s00339-025-08336-x
Le Tran Uyen Tu, Le Dai Vuong, Trinh Ngoc Dat, Vo Thanh Tung
{"title":"Effects of CuO doping on the sintering behavior and piezoelectric properties of lead-free (K0.41Na0.59)(Nb0.84Sb0.06Ta0.10)O3 ceramics","authors":"Le Tran Uyen Tu,&nbsp;Le Dai Vuong,&nbsp;Trinh Ngoc Dat,&nbsp;Vo Thanh Tung","doi":"10.1007/s00339-025-08336-x","DOIUrl":"10.1007/s00339-025-08336-x","url":null,"abstract":"<div><p>(K<sub>0.41</sub>Na<sub>0.59</sub>)(Nb<sub>0.84</sub>Sb<sub>0.06</sub>Ta<sub>0.10</sub>)O<sub>3</sub> + <i>x</i> wt% CuO (KNNST + <i>x</i> Cu, 0 ≤ <i>x</i> ≤ 0.1) ceramics were prepared using a two-step sintering technique. The effects of CuO on the sintering behavior, the phase structure, surface morphologies, and the piezoelectric properties of the (K<sub>0.41</sub>Na<sub>0.59</sub>)(Nb<sub>0.84</sub>Sb<sub>0.06</sub>Ta<sub>0.10</sub>)O<sub>3</sub> (KNNST) ceramics were investigated in details. The experimental results showed that CuO doping improved the “hardened” KNNST + <i>x</i> Cu ceramics through reduced dielectric loss (tanδ) and greatly enhanced mechanical quality factor (<i>Q</i><sub>m</sub>). Additionally, CuO doping significantly improved the piezoelectric properties at low sintering temperatures. The KNNST ceramics obtained excellent overall electrical properties of <i>d</i><sub>33</sub> = 265 pC/N, <i>k</i><sub>p</sub> = 0.50, <i>k</i><sub>p</sub> = 0.41, <i>Q</i><sub>m</sub> = 420, <i>ε</i><sub>r</sub> = 1173, tan<i>δ</i> = 0.015, <i>P</i><sub>r</sub> = 15 µC/cm<sup>2</sup>, and <i>T</i><sub>m</sub> = 325 °C at a sintering temperature of 1050 °C and 0.075 wt% CuO content, which showed that KNNST ceramics were promising candidates for power applications. Besides, CuO content of 0.1 wt% had the highest recoverable energy storage density (<i>W</i><sub>rec</sub>) of 0.34 J/cm<sup>3</sup> and energy storage efficiency (<i>η</i>) of 61.0%, expanding the scope of application for CuO-doped KNNST ceramics.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced thermoelectric performance of n-type Si80Ge20P3-TiO2 composites
IF 2.5 4区 材料科学
Applied Physics A Pub Date : 2025-02-18 DOI: 10.1007/s00339-025-08339-8
Meihua Hu, Yueyue Wang, Shangsheng Li, Ning Bi
{"title":"Enhanced thermoelectric performance of n-type Si80Ge20P3-TiO2 composites","authors":"Meihua Hu,&nbsp;Yueyue Wang,&nbsp;Shangsheng Li,&nbsp;Ning Bi","doi":"10.1007/s00339-025-08339-8","DOIUrl":"10.1007/s00339-025-08339-8","url":null,"abstract":"<div><p>Thermoelectric materials, such as SiGe alloys, have gained significant attention for their application in electricity generation at high temperatures. However, improving the thermal and electrical transport properties of n-type SiGe remains a challenge. In this work, n-type Silicon-Germanium alloys (SiGe) with dispersed nano-TiO<sub>2</sub> particles (Si<sub>80</sub>Ge<sub>20</sub>P<sub>3</sub>-<i>x</i> wt% nano-TiO<sub>2</sub>, <i>x</i> = 0, 3, 4, 5, 6) were synthesized by ball milling followed by spark plasma sintering. The effects of nano-TiO<sub>2</sub> particles on the electrical and thermal transport properties were investigated. The power factor of n-type SiGe alloys dispersed nano-TiO<sub>2</sub> particles was slightly decreased. However, the thermal conductivity had a significant reduction because of enhanced phonon scattering resulted from the multi-dimensional defect features. Coherent interfaces formed between SiGe alloys and nano-TiO<sub>2</sub> particles can generate phonon scattering in the range of medium to long wavelength. A dimensionless figure-of-merit (<i>zT</i>) of 1.64 at 1073 K was obtained in the sample of Si<sub>80</sub>Ge<sub>20</sub>P<sub>3</sub>-4 wt% nano-TiO<sub>2</sub>, which is 40% higher than the Si<sub>80</sub>Ge<sub>20</sub>P<sub>3</sub> alloy. This work provides a new approach to optimizing the thermoelectric performance and promoting the potential applications.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis and characterization of tungsten diselenide thin films by the two-step method
IF 2.5 4区 材料科学
Applied Physics A Pub Date : 2025-02-17 DOI: 10.1007/s00339-025-08292-6
Shilpa Thakur, K. Thanigai Arul, Sunil Singh Kushvaha, R. C. Meena, Chung-Li Dong, Senthil Kumar Muthusamy, Asokan Kandasami
{"title":"Synthesis and characterization of tungsten diselenide thin films by the two-step method","authors":"Shilpa Thakur,&nbsp;K. Thanigai Arul,&nbsp;Sunil Singh Kushvaha,&nbsp;R. C. Meena,&nbsp;Chung-Li Dong,&nbsp;Senthil Kumar Muthusamy,&nbsp;Asokan Kandasami","doi":"10.1007/s00339-025-08292-6","DOIUrl":"10.1007/s00339-025-08292-6","url":null,"abstract":"<div><p>Fabrication of thin films of WSe<sub>2</sub> is challenging and various methods are being explored. This study investigates the thermoelectric properties of tungsten diselenide thin films. The thin films are fabricated on Si substrates by using two-step processes. Here, the selenization of DC sputtered W thin films was carried out at different temperatures in the range of 400 to 500<sup>o</sup>C in the steps of 50<sup>o</sup>C. The crystal structure is found to be hexagonal and crystallite sizes increase with the selenization temperature. The morphology of the thin films selenized at 400<sup>o</sup>C shows no separated particles while raising the selenization temperature from 450<sup>o</sup>C to 500 °C uniform distribution of particles is observed. The shape of the particles was found spherical and rod-like. The Raman spectra show four modes: E<sub>1g,</sub><span>(:{text{E}}_{2text{g}}^{1})</span><sub>,</sub> A<sub>1g</sub>, and <span>(:{text{B}}_{2text{g}}^{1})</span>. Here, <span>(:{text{B}}_{2text{g}}^{1})</span> is associated with the interlayer interaction. The electrical resistivities of these thin films exhibit the conduction mechanism of the band conduction model. The highest Seebeck coefficient was reported for S500 (-9.15µV/K). Also, the power factor of S500 is the highest i.e. 13.4 Χ 10<sup>− 5</sup>µW/mK<sup>2</sup> This study shows the potential use of the selenization process to fabricate the WSe<sub>2</sub> thin films and optimize temperature for better thermoelectric properties.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Precision material removal and hardness reduction in silicon carbide using ultraviolet nanosecond pulse laser
IF 2.5 4区 材料科学
Applied Physics A Pub Date : 2025-02-17 DOI: 10.1007/s00339-025-08296-2
Hsin-Yi Tsai, Yu-Hsuan Lin, Kuo-Cheng Huang, Chen-Ju Lee, J. Andrew Yeh, Yi Yang, Chien-Fang Ding
{"title":"Precision material removal and hardness reduction in silicon carbide using ultraviolet nanosecond pulse laser","authors":"Hsin-Yi Tsai,&nbsp;Yu-Hsuan Lin,&nbsp;Kuo-Cheng Huang,&nbsp;Chen-Ju Lee,&nbsp;J. Andrew Yeh,&nbsp;Yi Yang,&nbsp;Chien-Fang Ding","doi":"10.1007/s00339-025-08296-2","DOIUrl":"10.1007/s00339-025-08296-2","url":null,"abstract":"<div><p>Silicon carbide (SiC), as a key material in the third-generation semiconductor industry, holds critical importance due to its superior thermal conductivity, high breakdown voltage, and wide bandgap. However, the conventional chemical mechanical polishing (CMP) process used in SiC wafer manufacturing is time-consuming and resource-intensive, involving significant material consumption and prolonged processing times. In this study, we explored the application of laser-assisted dry ablation as a pre-treatment for CMP. The experimental results showed that the single laser ablation depth of SiC is about 2 μm, and demonstrated that a laser spot overlap rate between 30% and 60% can generate a relatively lower surface roughness of SiC. This optimal range of overlap ensures a smoother ablation process, minimizing the irregularities on the SiC wafer surface. After a single pass of laser dry ablation, SiC hardness can be reduced to less than 3% of its original value, while material removal depth can be precisely controlled by adjusting the number of laser passes. With 50 repetitions, a material removal depth of nearly 30 μm was achieved. This reduction in hardness and enhanced material removal directly contribute to improve the efficiency of subsequent CMP processes by reducing polishing time and wear on grinding heads. In addition, after more than 5 times of laser treatment and then wet grinding, the thickness achievement rate can be increased from 73 to 93%. These results provide the important academic reference value. The integration of laser-assisted ablation into SiC wafer processing presents significant advantages in terms of increasing production throughput and reducing overall manufacturing costs. By simplifying the polishing steps and minimizing consumable usage, this approach offers a promising avenue for industrial applications, particularly in enhancing SiC wafer yield and optimizing semiconductor production workflows.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s00339-025-08296-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancing upconversion luminescence intensity of BiTa7O19:Er3+/Yb3+/Mo4+/Sb by doping Gd3+, La3+ or Lu3+
IF 2.5 4区 材料科学
Applied Physics A Pub Date : 2025-02-17 DOI: 10.1007/s00339-025-08325-0
Lei Li, Yongze Cao, Guojian Li, Sai Xu, Baojiu Chen
{"title":"Enhancing upconversion luminescence intensity of BiTa7O19:Er3+/Yb3+/Mo4+/Sb by doping Gd3+, La3+ or Lu3+","authors":"Lei Li,&nbsp;Yongze Cao,&nbsp;Guojian Li,&nbsp;Sai Xu,&nbsp;Baojiu Chen","doi":"10.1007/s00339-025-08325-0","DOIUrl":"10.1007/s00339-025-08325-0","url":null,"abstract":"<div><p>Based on the previous optimal concentration of Er<sup>3+</sup>/Yb<sup>3+</sup>/Mo<sup>4+</sup>/Sb co-doped BiTa<sub>7</sub>O<sub>19</sub> (BTO), Gd<sup>3+</sup>, La<sup>3+</sup> or Lu<sup>3+</sup> is planned to be doped into BTO: Er<sup>3+</sup>/Yb<sup>3+</sup>/Mo<sup>4+</sup>/Sb for further improving the upconversion luminescence (UCL) intensity under 980 nm laser excitation. These samples are prepared by solid phase sintering. The green UCL integral intensity of Gd<sup>3+</sup>, La<sup>3+</sup> or Lu<sup>3+</sup> doping samples reaches 2.87, 2.67 and 2.52 times than that of β-NaYF<sub>4</sub>:Er<sup>3+</sup>/Yb<sup>3+</sup>, respectively. It can be attributed to the change in Er<sup>3+</sup>/Yb<sup>3+</sup> doped site’ symmetry, bandgap increases and local structure changes. The maximum absolute sensitivity (S<sub>A</sub>) and relative sensitivity (S<sub>R</sub>) is got as 0.01098 K<sup>− 1</sup> at 356 K and 0.00776 K<sup>− 1</sup> at 303 K, respectively. Gd<sup>3+</sup>, La<sup>3+</sup> or Lu<sup>3+</sup> doping BTO: Er<sup>3+</sup>/Yb<sup>3+</sup>/Mo<sup>4+</sup>/Sb can be applied in luminescence display and temperature sensing.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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