The study of the effect of device downsizing on 1/f noise in deep submicron magnetic tunnel junctions

IF 2.5 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Applied Physics A Pub Date : 2025-05-27 DOI:10.1007/s00339-025-08630-8

T. N. Anh Nguyen, Q. N. Pham, K. T. Do, H. K. Vu, H. N. Pham, D. T. Tran, H. M. Do

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Abstract

In this study, nanoscale MgO magnetic tunnel junctions (MTJs) with an orthogonal magnetization structure between the free and pinned layers and various junction sizes were fabricated, and their tunnel magnetoresistance (TMR) ratio, resistance-area (RA) product, and low-frequency noise (LFN) behavior were experimentally investigated thoroughly. The circular MTJs with various diameters (80–400 nm) show high TMR ratios of greater than 100% at room temperature (RT) with relatively low RA in the range of 2.8–4.4 Ωµm². We found that the noise power spectral density (PSD) as a function of d.c. bias voltage (V_bias) and perpendicular d.c. bias magnetic field (H_DC) in all junction sizes exhibits 1/f-noise behavior within a wide investigated frequency range from 5 Hz up to 10 kHz. The bias voltage and magnetic field-dependent LFN indicated that the 1/f noise of the MTJs has both electric and magnetic origins. The results show that though the TMR ratio and RA product are size-independent, the Hooge parameter for the parallel (P) state (α_P) is strongly dependent on the MTJ size, and its values decrease with decreasing MTJ size, suggesting the reduction of electronic 1/f noise as the MTJ size shrinks. This is the first experimental report on the size dependency of electronic 1/f noise in nano-sized MTJs. The results may open a new approach for reducing not only magnetic but also electronic 1/f noises in MTJs by downscaling, thereby increasing the sensitivity of MTJ nanosensors.

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器件缩小对深亚微米磁性隧道结1/f噪声影响的研究

在本研究中，制备了具有自由层和钉住层之间正交磁化结构的纳米MgO磁性隧道结（MTJs），并对其隧道磁阻（TMR）比、电阻面积（RA）积和低频噪声（LFN）行为进行了实验研究。不同直径（80 ~ 400 nm）的圆形MTJs在室温下的TMR比均大于100%，相对较低的RA在2.8 ~ 4.4 Ωµm2之间。我们发现噪声功率谱密度（PSD）是直流偏置电压（Vbias）和垂直直流偏置磁场（HDC）在所有结尺寸下的函数，在从5 Hz到10 kHz的广泛调查频率范围内表现出1/f噪声行为。偏置电压和磁场相关的LFN表明，MTJs的1/f噪声既有电源，也有磁源。结果表明，虽然TMR比和RA积与MTJ尺寸无关，但平行(P)态的Hooge参数（αP）与MTJ尺寸密切相关，其值随着MTJ尺寸的减小而减小，表明电子1/f噪声随着MTJ尺寸的减小而降低。这是关于纳米MTJs中电子1/f噪声尺寸依赖性的第一篇实验报告。这一研究结果为降低MTJ纳米传感器的磁性和电子1/f噪声开辟了一条新途径，从而提高MTJ纳米传感器的灵敏度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics A 工程技术-材料科学：综合

CiteScore

4.80

自引率

7.40%

发文量

964

审稿时长

38 days

期刊介绍： Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.