IEEE Transactions on Plasma Science最新文献_第7页

Propagation Characteristics of the THz Wave in Plasma Sheath Under the Conditions of Ablation of Thermal Protection Materials 热保护材料烧蚀条件下等离子鞘中太赫兹波的传播特性

IF 1.3 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2024-09-06 DOI: 10.1109/TPS.2024.3450867

Yifan Wang;Lei Shi;Bo Yao;Zongyuan Liu;Kai Guo

{"title":"Propagation Characteristics of the THz Wave in Plasma Sheath Under the Conditions of Ablation of Thermal Protection Materials","authors":"Yifan Wang;Lei Shi;Bo Yao;Zongyuan Liu;Kai Guo","doi":"10.1109/TPS.2024.3450867","DOIUrl":"10.1109/TPS.2024.3450867","url":null,"abstract":"The ablation of thermal protection materials during the re-entry of a hypersonic vehicle alters plasma sheath characteristics, significantly affecting the vehicle’s communication performance. Terahertz (THz) technology emerges as one of the effective potential solutions for overcoming the high electron density encountered during the traditional re-entry blackout period. This article investigates the transmission characteristics of THz waves in the plasma sheath under two typical ablation conditions: phenolic graphite and Teflon, considering the effects of alkali metal impurities and the mass fraction of ablation products. Our results show that the total alkali metal content significantly increases the electron number density, with peak electron densities about an order of magnitude higher than those of Teflon. The collision frequency in phenolic graphite material varies nonlinearly due to differences in ablation product mass fractions and exhibits trends opposite to those of Teflon with altitude, with maximum deviations exceeding 50 GHz. Propagation attenuation analysis indicates that the minimum frequency of EM waves should be above 0.13 THz to mitigate the impact of alkali metal content on communication quality. In practical applications, selecting materials with low alkali metal content proves effective, allowing communication frequencies to be reduced to as low as 0.03 THz with Teflon to meet communication demands.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"52 7","pages":"3043-3050"},"PeriodicalIF":1.3,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142175255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of a Gas-Puff Z-Pinch for the MAIZE Linear Transformer Driver 为 MAIZE 线性变压器驱动器开发气吹式 Z 型夹钳

IF 1.5 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2024-09-05 DOI: 10.1109/tps.2024.3436054

A. P. Shah, B. J. Sporer, G. V. Dowhan, K. W. Elliott, M. Krishnan, N. M. Jordan, R. D. McBride

引用次数: 0

Research on Fault Diagnosis Technology for Ion Tube Based on Neural Network 基于神经网络的离子管故障诊断技术研究

IF 1.3 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2024-09-05 DOI: 10.1109/TPS.2024.3451017

Mengmei Zhang;Kun Shen;Haoxiang Chen;Mengyao Wu

{"title":"Research on Fault Diagnosis Technology for Ion Tube Based on Neural Network","authors":"Mengmei Zhang;Kun Shen;Haoxiang Chen;Mengyao Wu","doi":"10.1109/TPS.2024.3451017","DOIUrl":"10.1109/TPS.2024.3451017","url":null,"abstract":"Ion tube is a type of dielectric barrier discharge (DBD) device widely applied in the field of air pollution treatment. The operational state of ion tube is a crucial factor that affects the efficiency of air pollution treatment. Manual inspection is the primary method for monitoring the state of ion tube. This approach suffers from issues such as time-consuming, labor-intensive, and heavily reliant on personal experience. To achieve automation and intelligence of fault diagnosis for ion tube, this article uses a neural network to design an online measurement scheme of ion tube’s Lissajous figure, the nonlinear relationship of signals from the low-voltage side to high-voltage side of the ion tube transformer is fit by neural network. And based on the measured low-voltage side signals, the ion tube’s Lissajous figure is calculated by the designed neural network. Moreover, the convolutional neural network (CNN) is used to construct the fault diagnosis scheme for ion tube and the ion tube’s Lissajous figure is classified by a two-level classification scheme. The primary classification CNN distinguishes between punctured and nonpunctured ion tube, and then the secondary classification CNN categorizes nonpunctured ion tube into brand-new, semi-new, and damaged ion tube. The experimental results indicate that the designed online measurement technology of ion tube’s Lissajous figure has the same measurement accuracy as traditional methods and does not require oscilloscopes, high-voltage probes, and external measurement capacitors. And the designed fault diagnosis technology for ion tube effectively distinguishes four fault states of ion tube with high accuracy.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"52 6","pages":"2313-2322"},"PeriodicalIF":1.3,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142175258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design Update on the MAST-Upgrade Microwave Heating and Current Drive System Launchers MAST-升级版微波加热和电流驱动系统发射装置的最新设计情况

IF 1.5 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2024-09-04 DOI: 10.1109/tps.2024.3410644

Joe O. Allen, Shail Desai, Simon Freethy, Keith Hawkins, Mark A. Henderson, Carsten Lechte, Jonathan Pearl, Burkhard Plaum, Helen Webster

引用次数: 0

Method of Measuring Field Emission Current Under High-Voltage Pulse 高电压脉冲下的场发射电流测量方法

IF 1.3 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2024-09-04 DOI: 10.1109/TPS.2024.3450729

Yue Wu;Jian-cang Su;Hao-Ran Zhang;Xu-Dong Qiu;Bin-Xiong Yu;Liang Zhao;Shuai Shao;Ming-Zhu Gao;Jia-Ru Shi

引用次数: 0

Investigation of Current-Carrying Oblique Impacts on the Copper–Aluminum Interface for Damage Characteristics 铜铝界面上的载流斜撞击损伤特征调查

IF 1.3 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2024-09-04 DOI: 10.1109/TPS.2024.3446661

Weihao Li;Qiancheng Hu;Chengcheng Li;Shiyu Hao;Hao Shi;Ran An;Xingwen Li;Li Chen

{"title":"Investigation of Current-Carrying Oblique Impacts on the Copper–Aluminum Interface for Damage Characteristics","authors":"Weihao Li;Qiancheng Hu;Chengcheng Li;Shiyu Hao;Hao Shi;Ran An;Xingwen Li;Li Chen","doi":"10.1109/TPS.2024.3446661","DOIUrl":"10.1109/TPS.2024.3446661","url":null,"abstract":"The gouging seriously affects the reliability and the life of railguns, and oblique impact is considered the main reason for gouging. In this article, a pulse power technology method for the current-carrying oblique impact using an electromagnetic (EM) repulsive disk was proposed. The strain rate of \u0000<inline-formula> <tex-math>$1.5times 10^{4}$ </tex-math></inline-formula>\u0000/s and the current density of \u0000<inline-formula> <tex-math>$2.48times 10^{9}$ </tex-math></inline-formula>\u0000 A/m2 on the specimen were obtained by the numerical simulation. The dynamic impact damage and deposition characteristics of AA7075 and T2 copper contact interface under high current density and high strain rate were investigated. By comparing the microscopic characteristics distribution of the specimen profiles and surfaces under different current densities, the results are given as follows. The method is capable of generating gouging-like craters. The deformed area of the crater bottom exhibits obvious grain elongation and refinement. As the current increases, the depth of the crater and the thickness of the deformed layer gradually increase. The application of pulsed current stimulates aluminum deposition and the emergence of new phases. The influence of current on the mechanical properties is evident in the reduction of hardness and yield stress at the base of the craters.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"52 6","pages":"2349-2358"},"PeriodicalIF":1.3,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142175263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Pulse Generation Circuit Based on Series Hybrid Energy Storage 基于串联混合储能的脉冲发生电路

IF 1.3 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2024-09-04 DOI: 10.1109/TPS.2024.3443908

Xiaojing Ren;Longbo Yan;Weihua Jiang;Jingming Gao;Hanwu Yang

{"title":"A Pulse Generation Circuit Based on Series Hybrid Energy Storage","authors":"Xiaojing Ren;Longbo Yan;Weihua Jiang;Jingming Gao;Hanwu Yang","doi":"10.1109/TPS.2024.3443908","DOIUrl":"10.1109/TPS.2024.3443908","url":null,"abstract":"As an extension research of pulse power generation method, we proposed a new variant of pulse generation circuit based on hybrid energy storage (HES). The energy storage structure of the proposed circuit is a series connection of two capacitors and one inductor, referred as a CLC series HES circuit. Under the control of two switches, the capacitors on both sides simultaneously transfer energy to the center inductor, shortening the inductor’s charging time. Moreover, these two switches act as opening switches for inductive discharge, and their current is only half of the inductor current, meaning that this CLC circuit can effectively alleviate the current limitation of the opening switches. In this research, based on power SiC MOSFETs, experimental circuits have been set up to verify the feasibility of the proposed circuit. As a result, when charging at 200 V, the output voltage of one CLC module on a \u0000<inline-formula> <tex-math>$10~Omega $ </tex-math></inline-formula>\u0000 load is ~800 V, with a rise time of ~13 ns and a pulse half width of ~24 ns, and the operation stability at 1000 Hz has been demonstrated. Finally, by gradually increasing the module number to four stages, the stackability of the multiple-module CLC series HES pulse generation circuit has also been confirmed. When the charging voltage is 800 V, the output voltage on a ~40-\u0000<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>\u0000 load is ~2.9 kV with a rise time of 17 ns.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"52 7","pages":"2926-2932"},"PeriodicalIF":1.3,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142175261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparative Analysis of Vacuum Feedthroughs for the DTT ICRH System DTT ICRH 系统真空馈入件比较分析

IF 1.5 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2024-08-30 DOI: 10.1109/tps.2024.3439270

Francesco Mirizzi, Gianluca Ravera, Silvio Ceccuzzi, Franco Di Paolo, Stefano Fantauzzi, Lorenzo Valletti

引用次数: 0

Static Current Balancing Strategy for Parallel IGBTs Based on Parametric Compensation 基于参数补偿的并联 IGBT 静态电流平衡策略

IF 1.3 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2024-08-30 DOI: 10.1109/TPS.2024.3446817

Lan Peng;Haihong Huang;Haixin Wang

{"title":"Static Current Balancing Strategy for Parallel IGBTs Based on Parametric Compensation","authors":"Lan Peng;Haihong Huang;Haixin Wang","doi":"10.1109/TPS.2024.3446817","DOIUrl":"10.1109/TPS.2024.3446817","url":null,"abstract":"Insulated gate bipolar transistor (IGBT) parallel connection is an effective way to solve the problem, which is the gradual increase in the capacity of the magnetic confinement power supply in a Tokamak device. Static current balance (SCB) is one of the key factors for the safe and stable operation of a parallel IGBT system. Therefore, to improve the stability of parallel IGBT systems, it is very important to study the current difference in the parallel IGBTs under various parameter differences. However, the existing results have focused mainly on device parameter matching through device screening, driving parameter matching using the active gate driving (AGD) method, or single parasitic parameter (PP) matching. These research results do not analyze the matching strategy between multiple parameters, which are the device parameter and the PP. The study showed that the collector inductance, emitter parasitic inductance, emitter parasitic resistance, collector equivalent resistance, and equivalent series voltage of the IGBTs have a significant impact on the SCB of the parallel IGBTs. When these five parameters are mismatched, there exists an equilibrium point that can reduce the static current difference (SCD) between the parallel IGBTs under the total influence of these parameter differences. Therefore, a current difference model (CDM) is created to analyze the equilibrium point of multiple parameter mismatches. The experimental results show that the multiparameter compensation scheme implemented by the CDM can effectively reduce the current difference between parallel IGBTs, which provides a feasible reference for device selection and circuit design.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"52 7","pages":"2907-2916"},"PeriodicalIF":1.3,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142175266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phase Transition Driven and Angle Multiplexed Broad/Narrowband THz Absorber 相位转换驱动和角度复用宽/窄带太赫兹吸收器

IF 1.3 4区物理与天体物理

IEEE Transactions on Plasma Science Pub Date : 2024-08-30 DOI: 10.1109/TPS.2024.3447868

Gaurav Varshney;Maitri Mahak

引用次数: 0