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2007 European Microwave Integrated Circuit Conference最新文献

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Improved design methodology for a 2 GHz class-E hybrid power amplifier using packaged GaN-HEMTs 改进了使用封装gan - hemt的2ghz e类混合功率放大器的设计方法
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412794
J. Flucke, C. Meliani, F. Schnieder, W. Heinrich
{"title":"Improved design methodology for a 2 GHz class-E hybrid power amplifier using packaged GaN-HEMTs","authors":"J. Flucke, C. Meliani, F. Schnieder, W. Heinrich","doi":"10.1109/EMICC.2007.4412794","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412794","url":null,"abstract":"This paper reports on design methodology and realization of a class-E power amplifier (PA) for 2 GHz using a packaged GaN-HEMT. The circuit achieves 36 dBm output power and 57% PAE, with drain efficiency as high as 62%. In addition to the large-signal simulation considerations, we discuss particularly the problem of input matching of the amplifier under class-E operation.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122132385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A high linearity mixed signal down converter IC for C-band radar receivers 一种用于c波段雷达接收机的高线性混合信号下变频集成电路
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412697
H. Berg, H. Thiesies, M. Hertz, F. Norling
{"title":"A high linearity mixed signal down converter IC for C-band radar receivers","authors":"H. Berg, H. Thiesies, M. Hertz, F. Norling","doi":"10.1109/EMICC.2007.4412697","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412697","url":null,"abstract":"A mixed signal receiver IC for C-band radars is presented. The design work has been focused on spectral purity and miniaturization. Miniaturization is achieved by minimizing peripheral components and control signals using internal calibration data and temperature compensation tables stored in RAM on-chip. This allows for the packaged chip to be used with a minimum of. The chip is manufactured by Austria Microsystems in their 0.35 um SiGe-BiCMOS process and utilizes digital IP-block included in the design kit.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122321623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transport shot noise models and NFmin comparison for SiGe HBTs under different operation configurations 不同运行配置下SiGe HBTs输运弹噪声模型及NFmin比较
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412684
Hui Li, Z. Ma, G. Niu
{"title":"Transport shot noise models and NFmin comparison for SiGe HBTs under different operation configurations","authors":"Hui Li, Z. Ma, G. Niu","doi":"10.1109/EMICC.2007.4412684","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412684","url":null,"abstract":"Triggered by the recent discoveries on the superior high-frequency performance exhibited by the common-base (CB) SiGe HBTs over the common-emitter (CE) ones, noise characteristics of the CB SiGe HBT are investigated in this paper. Accurate RF shot noise models are derived for CB SiGe HBTs and used to calculate their minimum noise figure (NFmin). The NFmin of CB SiGe HBTs are then compared with that of the CE SiGe HBTs. Simplified noise models can be obtained for both CE and CB SiGe HBTs by ignoring the base resistance effects in order to obtain an explicit expression of the NFmin for both configurations. It is found, from applying the noise models into CE and CB SiGe HBTs, that the simplified noise model can provide the same noise figure as the improved model for CE SiGe HBTs, while different results were obtained for CB SiGe HBTs. The difference indicates the critical importance of including base resistance in modelling the noise characteristics of CB SiGe HBTs. Regardless of the difference of NFmin between CE and CB SiGe HBTs, CB SiGe HBTs also exhibit low NFmin while offering their potential higher associated power gain values for promising implementation in low-noise amplifiers.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132602105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A simplified, empirical large-signal model for SiC MESFETs SiC mesfet的简化经验大信号模型
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412643
K. Yuk, G. Branner
{"title":"A simplified, empirical large-signal model for SiC MESFETs","authors":"K. Yuk, G. Branner","doi":"10.1109/EMICC.2007.4412643","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412643","url":null,"abstract":"A new, simplified empirical large-signal model for high power microwave SiC MESFFTs is presented. A generalized drain current source equation is developed, allowing close predictions of both pulsed and static IV characteristics, which vary significantly due to current dispersion. Thv drain current source is based on pulsed IV measurements and accurately predicts the gm and gds without supplemental RF current source generators as typically used in other models. The model is shown to accurately predict the output and input reflected power over an available power range of +10dBm to +36dBm for three harmonics while maintaining the ability to compute the small-signal S-parameters.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126213457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effects of atmosphere on the reliability of RF-MEMS capacitive switches 大气对RF-MEMS电容开关可靠性的影响
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412771
P. Blondy, A. Crunteanu, A. Pothier, P. Tristant, A. Catherinot, C. Champeaux
{"title":"Effects of atmosphere on the reliability of RF-MEMS capacitive switches","authors":"P. Blondy, A. Crunteanu, A. Pothier, P. Tristant, A. Catherinot, C. Champeaux","doi":"10.1109/EMICC.2007.4412771","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412771","url":null,"abstract":"The influence of atmosphere on capacitive RF-MEMS switches is studied. It is shown that ambient atmosphere not only induces an incremental effect on the degradation of MEMS switches but also completely changes the charging mechanism of the dielectrics, directly linked with RF-MEMS reliability behaviour of MEMS switches reliability. Operating RF-MEMS switches in a dry environment changes the mechanism of charging from surface charging to bulk charging.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125986681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs gan - gan hemt的低频动态漏极电流建模
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412649
V. Di Giacomo, A. Santarelli, F. Filicori, A. Raffo, G. Vannini, R. Aubry, C. Gaquière
{"title":"Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs","authors":"V. Di Giacomo, A. Santarelli, F. Filicori, A. Raffo, G. Vannini, R. Aubry, C. Gaquière","doi":"10.1109/EMICC.2007.4412649","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412649","url":null,"abstract":"Low-frequency dispersive effects in AlGaN/GaN HEMTs are here modeled above their cutoff frequencies by adopting a modeling approach developed for GaAs PHEMTs. To this aim, a new identification procedure is proposed, which allows to obtain very accurate predictions of the pulsed drain currents, even in the presence of strong kink effects in the DC characteristics. In addition, a dedicated algorithm of data extrapolation is used, in order to make the model more computationally efficient.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122871439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 25 % bandwidth 8 W X-band HPA for radar applications 用于雷达应用的25%带宽8w x波段HPA
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412670
C. Costrini, M. Calori, C. Lanzieri, C. Proietti
{"title":"A 25 % bandwidth 8 W X-band HPA for radar applications","authors":"C. Costrini, M. Calori, C. Lanzieri, C. Proietti","doi":"10.1109/EMICC.2007.4412670","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412670","url":null,"abstract":"The development of a MMIC HPA designed for X-band radar applications is reported. The chip was fabricated with a low-cost 0.4 mum GaAs PHEMT process and is composed of two stages, with a final stage of 16 mm gate-width periphery. In the frequency bandwidth 8.5-11 GHz, the HPA delivers an output power of 8 W @ 3dB compression point, with an associated PAE of circa 30%.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115218193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100nm SiN recessed gate technology for low cost device fabrication 基于100nm SiN凹槽栅技术的(001)取向硅衬底上的AlGaN/GaN hemt，用于低成本器件制造
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412656
S. Boulay, S. Touati, Y. Cordier, F. Semond, J. Massies
{"title":"AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100nm SiN recessed gate technology for low cost device fabrication","authors":"S. Boulay, S. Touati, Y. Cordier, F. Semond, J. Massies","doi":"10.1109/EMICC.2007.4412656","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412656","url":null,"abstract":"This paper shows the capability of AlGaN/GaN high electron mobility transistors (HEMTs) with 0.1 mum gamma shaped gate length on (001) oriented silicon substrate for microwave power applications. The gate technology is based on silicon nitride thin film and uses a digital etching to perform the recess through the SiN mask. Output current densities of 420 mA/mm, extrinsic cut-off frequencies (fT) of 28 GHz and maximum oscillations frequencies (fmax) of 46C Hz are measured on 300 mum gate periphery device. At 2.15 GK/., an output power density of 1 W/mm associated to a power added efficiency of 17% and a linear gain of 24 dB are achieved lit VDS = 30 V and VGS = -1.2 V.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114389227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
10-Gb/s CMOS ultrahigh-speed gold-code generator using differential-switches feedback 采用差分开关反馈的10gb /s CMOS超高速金码发生器
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412693
C.‐L. Lu, H.-C. Wang, J. Juang, H. Chuang
{"title":"10-Gb/s CMOS ultrahigh-speed gold-code generator using differential-switches feedback","authors":"C.‐L. Lu, H.-C. Wang, J. Juang, H. Chuang","doi":"10.1109/EMICC.2007.4412693","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412693","url":null,"abstract":"This paper proposes a new architecture for the implementation of an n-input XOR gate in ultrahigh-speed applications. The new circuitry makes it possible to let the conventional sequence logic with XOR feedback, such as Gold code generator, to work up to ten-gigabit per second. This paper will systematically describe the principle of substituting a set of differential switches for an XOR gate. The proposed circuitry is demonstrated in a five-stage Gold code generator implemented in TSMC 0.18-mum 1P6M CMOS process. The simulation results show that the delay of the proposed four-input XOR gate is so much improved as to let the five-stage (5,3) and (5,4,3,2) Gold code generator to work up to 10 Gb/s.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127316548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Embedded IC technology for compact packaging inside aluminum substrate (pocket embedded packaging) 铝基板内紧凑封装的嵌入式IC技术(口袋嵌入式封装)
2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI: 10.1109/EMICC.2007.4412715
Kyoung-Min Kim, J. Yook, Sung-Ku Yeo, Young-Se Kwon
{"title":"Embedded IC technology for compact packaging inside aluminum substrate (pocket embedded packaging)","authors":"Kyoung-Min Kim, J. Yook, Sung-Ku Yeo, Young-Se Kwon","doi":"10.1109/EMICC.2007.4412715","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412715","url":null,"abstract":"Various technologies have been developed to package microwave systems to achieve low-cost, high-integration, better RF performance and good thermal dissipation. In this paper, we propose a new type packaging technology, \"pocket embedded packaging (PEP)\", using selectively anodized aluminum substrate. In this technology, chips can be embedded inside aluminum substrate so that ultra thin and compact type of package can be achieved. More than 120 mum thick aluminum oxide (Al2O3) is selectively anodized on an aluminum substrate with 5% oxalic acid electrolyte. This thick aluminum oxide (Al2O3) can be chemically etched with vertical side walls. Rectangular-shape of opening area, which we named \"pocket\" is easily formed inside aluminum substrate. After the formation of the pocket, active chips can be embedded inside it with a tolerance of less than 3 mum. Passive components on an aluminum oxide (Al2O3) are interconnected with active chips through metallic interconnections.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131592958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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