A 25 % bandwidth 8 W X-band HPA for radar applications

C. Costrini, M. Calori, C. Lanzieri, C. Proietti
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引用次数: 1

Abstract

The development of a MMIC HPA designed for X-band radar applications is reported. The chip was fabricated with a low-cost 0.4 mum GaAs PHEMT process and is composed of two stages, with a final stage of 16 mm gate-width periphery. In the frequency bandwidth 8.5-11 GHz, the HPA delivers an output power of 8 W @ 3dB compression point, with an associated PAE of circa 30%.
用于雷达应用的25%带宽8w x波段HPA
报道了一种用于x波段雷达应用的MMIC HPA的研制。该芯片采用低成本的0.4 μ m GaAs PHEMT工艺制造,由两个阶段组成,最后阶段的栅极宽度为16 mm。在8.5- 11ghz频段,HPA输出功率为8w @ 3dB压缩点,相关PAE约为30%。
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