{"title":"A 25 % bandwidth 8 W X-band HPA for radar applications","authors":"C. Costrini, M. Calori, C. Lanzieri, C. Proietti","doi":"10.1109/EMICC.2007.4412670","DOIUrl":null,"url":null,"abstract":"The development of a MMIC HPA designed for X-band radar applications is reported. The chip was fabricated with a low-cost 0.4 mum GaAs PHEMT process and is composed of two stages, with a final stage of 16 mm gate-width periphery. In the frequency bandwidth 8.5-11 GHz, the HPA delivers an output power of 8 W @ 3dB compression point, with an associated PAE of circa 30%.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2007.4412670","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The development of a MMIC HPA designed for X-band radar applications is reported. The chip was fabricated with a low-cost 0.4 mum GaAs PHEMT process and is composed of two stages, with a final stage of 16 mm gate-width periphery. In the frequency bandwidth 8.5-11 GHz, the HPA delivers an output power of 8 W @ 3dB compression point, with an associated PAE of circa 30%.