改进了使用封装gan - hemt的2ghz e类混合功率放大器的设计方法

2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI:10.1109/EMICC.2007.4412794

J. Flucke, C. Meliani, F. Schnieder, W. Heinrich

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引用次数: 3

摘要

本文报道了一种使用封装GaN-HEMT的2ghz e类功率放大器的设计方法和实现。电路输出功率为36dbm, PAE为57%，漏极效率高达62%。除了大信号仿真的考虑外，我们还特别讨论了e类操作下放大器的输入匹配问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Improved design methodology for a 2 GHz class-E hybrid power amplifier using packaged GaN-HEMTs

This paper reports on design methodology and realization of a class-E power amplifier (PA) for 2 GHz using a packaged GaN-HEMT. The circuit achieves 36 dBm output power and 57% PAE, with drain efficiency as high as 62%. In addition to the large-signal simulation considerations, we discuss particularly the problem of input matching of the amplifier under class-E operation.

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2007 European Microwave Integrated Circuit Conference

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