gan - gan hemt的低频动态漏极电流建模

2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI:10.1109/EMICC.2007.4412649

V. Di Giacomo, A. Santarelli, F. Filicori, A. Raffo, G. Vannini, R. Aubry, C. Gaquière

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引用次数: 0

摘要

本文采用为GaAs phemt开发的建模方法，将AlGaN/GaN hemt中的低频色散效应建立在其截止频率之上。为此，提出了一种新的识别程序，即使在直流特性中存在强扭结效应的情况下，也可以获得非常准确的脉冲漏极电流预测。此外，为了提高模型的计算效率，还采用了专用的数据外推算法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs

Low-frequency dispersive effects in AlGaN/GaN HEMTs are here modeled above their cutoff frequencies by adopting a modeling approach developed for GaAs PHEMTs. To this aim, a new identification procedure is proposed, which allows to obtain very accurate predictions of the pulsed drain currents, even in the presence of strong kink effects in the DC characteristics. In addition, a dedicated algorithm of data extrapolation is used, in order to make the model more computationally efficient.

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2007 European Microwave Integrated Circuit Conference

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