发布求助
文献互助 智能选刊 最新文献

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)最新文献

筛选
英文 中文
All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-Temperature Power Switching Applications 具有p-GaN栅极HEMT和SiC JFET的全wbg级联器件，用于高频和高温功率开关应用
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360291
Yuru Wang, G. Lyu, Jin Wei, Zheyang Zheng, Kailun Zhong, K. J. Chen
{"title":"All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-Temperature Power Switching Applications","authors":"Yuru Wang, G. Lyu, Jin Wei, Zheyang Zheng, Kailun Zhong, K. J. Chen","doi":"10.1109/WiPDAAsia49671.2020.9360291","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360291","url":null,"abstract":"An all-wide-bandgap (all-WBG) cascode device with a low-voltage (LV) enhance-mode (E-mode) p-GaN gate HEMT as the control device and a high-voltage (HV) depletion-mode (D-mode) SiC JFET as the voltage blocking device has been systematically studied. The demonstrated device with a breakdown voltage (BV) rating of 1200 V and a static ON-resistance (RON) of 100 m$Omega$, features small device capacitances, avalanche breakdown capability, thermally stable threshold voltage (VTH), no dynamic RON degradation, and small gate charge (QG). To identify its safe operation in the OFF-state with a high drain bias, the OFF-state middle point voltage (VM) between the E-mode device drain and D-mode device source is investigated. An adequately low OFF-state VMis achieved under both static and dynamic modes. Furthermore, a double-pulse test circuit is built to evaluate the transient switching performance at $25^{circ}C$ and $150^{circ}C$. Under 800-V/16-A testing conditions, high switching speed with low total switching losses of $214 mu J$ and $236 mu J$ are obtained at $25^{circ}C$ and $150^{circ}C$, respectively.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134031625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode 体二极管重复浪涌电流应力下SiC沟槽MOSFET可靠性研究
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/wipdaasia49671.2020.9360249
Zhenyu Wang, Yunjia Li, Xiaohua Sun, Ye Liu, Zhengyun Zhu, Na Ren, Qing Guo
{"title":"Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode","authors":"Zhenyu Wang, Yunjia Li, Xiaohua Sun, Ye Liu, Zhengyun Zhu, Na Ren, Qing Guo","doi":"10.1109/wipdaasia49671.2020.9360249","DOIUrl":"https://doi.org/10.1109/wipdaasia49671.2020.9360249","url":null,"abstract":"Although the body diode of SiC MOSFET has excellent surge capability, the reliability issues about commercial SiC MOSFET under repetitive surge current stress of body diode haven’t been studied thoroughly. In this work, repetitive surge current stress is applied to the body diode of commercial SiC trench MOSFET, and the surge tests are conducted under different gate biases and ambient temperatures. It is found that no bipolar degradation occurs in the body diode but degradation phenomena of gate oxide and package are observed in devices under tests (DUTs). At room temperature, the threshold voltage (VTH) related to gate oxide degradation degrades more seriously at a negative gate bias of -5V than at OV. At OV gate bias, gate oxide and package degenerate more severely at $125^{circ}{C}$ than at $25^{circ}{C}$. The evolution of on-state resistance $(R_{DSON})$ during the tests is influenced by the competitive mechanism between gate oxide degradation and package degradation. As a result, gate oxide degradation causes RDSON to reduce while package degradation makes RDSON rise. Meanwhile, the competitive mechanism is deeply influenced by the gate bias voltage and ambient temperature. The failure analysis shows that all DUTs fail with gate and source terminal shorted, which is mainly attributed to high junction temperature.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132808092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High Electron Mobility of 1880 cm2 V-S In0.17 Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer 具有GaN帽层的1880 cm2 V-S In0.17 Al0.83N/GaN-on- si HEMTs的高电子迁移率
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360271
Y. Luo, I. Sanyal, W. Tzeng, Y. Ho, Ya-Chun Chang, Chih-Chao Hsu, J. Chyi, C. Wu
{"title":"High Electron Mobility of 1880 cm2 V-S In0.17 Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer","authors":"Y. Luo, I. Sanyal, W. Tzeng, Y. Ho, Ya-Chun Chang, Chih-Chao Hsu, J. Chyi, C. Wu","doi":"10.1109/WiPDAAsia49671.2020.9360271","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360271","url":null,"abstract":"Since the communication techniques for 5G developed recent years, GaN-based HEMTs have been very promising candidates for high-speed and high-power electronic applications. Due to the intrinsic properties such as breakdown voltage, electron mobility and electron concentration compared to Si, power capability and switching speed can be improved easily by introducing GaN HEMTs into MMICs. But for conventional AlGaN/GaN HEMT, reducing the thickness of barrier $(t_{barrier})$ to prevent short channel effect will cause electric properties degrade [1], such as carrier concentration $(N_{s})$ and mobility [2]. Therefore, in this work, we replace AlGaN with In$_{0.17}Al_{0.83}$N, which can be scaled below to 10nm without decreasing Ns. Also, growing a thin GaN cap layer to prevent barrier from oxidation and fabricating T-shaped gate to improving high frequency characteristics are done","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115564832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Study on Thermal Coupling Effect for SiC Power Module Design Guidelines SiC功率模块设计指南中的热耦合效应研究
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360285
Fengtao Yang, Lixin Jia, Laili Wang, Cheng Zhao, Jianpeng Wang, Tongyu Zhang, Yongmei Gan, Hong Zhang
{"title":"The Study on Thermal Coupling Effect for SiC Power Module Design Guidelines","authors":"Fengtao Yang, Lixin Jia, Laili Wang, Cheng Zhao, Jianpeng Wang, Tongyu Zhang, Yongmei Gan, Hong Zhang","doi":"10.1109/WiPDAAsia49671.2020.9360285","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360285","url":null,"abstract":"SiC devices have excellent characteristics compared with silicon devices. But its superiority is not fully utilized in some occasions, where the operating ambient temperature is high, the cooling system is constricted, the high power density and decreased size is needed. In this paper, the thermal coupling effect which is vital to further improving the SiC power module in mentioned occasions is investigated by physical analytical derivation and finite element method (FEM) analysis at first. Several designing guidelines for SiC power module are presented at the view of attenuating thermal coupling effect. According to designing guidelines, a SiC-based, half bridge power module using the novel packaging structure called interleaved double-sided packaging structure is proposed. Due to the low thermal coupling effect and more balanced temperature distribution, this module features excellent thermal performance.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126980675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A Hybrid Half-bridge LLC Resonant Converter and Phase Shifted Full-bridge Converter for High Step-up Application 用于高升压应用的混合半桥LLC谐振变换器和相移全桥变换器
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360292
Yuqi Wei, Quanming Luo, A. Mantooth
{"title":"A Hybrid Half-bridge LLC Resonant Converter and Phase Shifted Full-bridge Converter for High Step-up Application","authors":"Yuqi Wei, Quanming Luo, A. Mantooth","doi":"10.1109/WiPDAAsia49671.2020.9360292","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360292","url":null,"abstract":"High step-up DC/DC converters are popular in renewable energy generation systems, like photovoltaic (PV) and fuel cell. To achieve high step-up conversion ratio, in this paper, an input-parallel and output-series hybrid topology of half-bridge LLC resonant converter and phase shifted full-bridge converter (PSFB) is proposed. The following features have been achieved: 1) high voltage conversion ratio: due to the output series connection, the system voltage conversion ratio equals to the sum of LLC resonant converter and PSFB converter. In addition, the voltage doubler rectifier is adopted for the LLC resonant converter to further increase the voltage gain; 2) LLC resonant converter is operating at the series resonant frequency operating point, its voltage conversion ratio is constant and independent of the load, and the high efficiency conversion is achieved; 3) function decoupling idea is adopted for the proposed topology, most of the power is handled by the high efficiency conversion unit-LLC resonant converter, while the PSFB unit is used to regulate the output voltage; 4) since both two converter units are isolated DC/DC converter, fully isolation between the input voltage and output voltage is achieved. Operational principles, design considerations, and experimental validation are presented.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"8 182 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128161356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A MATLAB GUI Program for LLC Resonant Converter LLC谐振变换器的MATLAB GUI程序
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360287
Yuqi Wei, Zhiqing Wang, Quanming Luo, A. Mantooth
{"title":"A MATLAB GUI Program for LLC Resonant Converter","authors":"Yuqi Wei, Zhiqing Wang, Quanming Luo, A. Mantooth","doi":"10.1109/WiPDAAsia49671.2020.9360287","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360287","url":null,"abstract":"In this paper, a graphical user interference (GUI) program based on MATLAB was built for LLC resonant converter. The time domain analysis method is adopted to derive the mathematical model of LLC resonant converter in PO operation mode. The designed MATLAB GUI program has the following features and advantages: 1) key circuit voltages and currents operation waveforms are presented, which can help visualize the steady state operation of the converter; 2) the execution time is only around one second, which is much more faster than commercial simulation software; 3) important currents and voltages values are summarized and listed, which is convenient for users; 4) power loss model is used to obtain the efficiency and power loss distribution information, which is beneficial for LLC converter design; 5) high accuracy and small computation capacity make it suitable for industry applications. Brief introductions for the time domain analysis are presented in this paper. Comparisons between the proposed GUI program and commercial simulation tools are made.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127736660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design Considerations on a Monolithically Integrated, Self Controlled and Regenerative 900 V SiC Circuit Breaker 单片集成、自控再生900 V SiC断路器的设计考虑
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360279
N. Boettcher, T. Erlbacher
{"title":"Design Considerations on a Monolithically Integrated, Self Controlled and Regenerative 900 V SiC Circuit Breaker","authors":"N. Boettcher, T. Erlbacher","doi":"10.1109/WiPDAAsia49671.2020.9360279","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360279","url":null,"abstract":"This paper presents an in depth analysis of the design constraints of a novel monolithically integrated circuit breaker technology suitable for 900 V applications. The proposed topology is based on the dual thyristor concept, which poses exceptional design challenges. In order to understand the basic operation and influence of design parameters, an analytical dual thyristor model is derived. With the knowledge gained, (a) a monolithically integrated topology in 4H-SiC technology is developed and its characteristics are discussed in a design study with the aid of TCAD simulations. These simulations reveal designs exhibiting specific on-state resistance of 53 mOhmcm2, trigger current density of 149 A/cm2 and blocking voltage of 1252 V.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116762371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Substrate Effects in GaN-on-Si Integrated Bridge Circuit and Proposal of Engineered Bulk Silicon Substrate for GaN Power ICs GaN-on- si集成桥电路中的衬底效应及GaN功率集成电路的工程化大块硅衬底方案
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/wipdaasia49671.2020.9360273
Jin Wei, Meng Zhang, G. Lyu, K. J. Chen
{"title":"Substrate Effects in GaN-on-Si Integrated Bridge Circuit and Proposal of Engineered Bulk Silicon Substrate for GaN Power ICs","authors":"Jin Wei, Meng Zhang, G. Lyu, K. J. Chen","doi":"10.1109/wipdaasia49671.2020.9360273","DOIUrl":"https://doi.org/10.1109/wipdaasia49671.2020.9360273","url":null,"abstract":"In this work, the substrate effects in GaN-on-Si power ICs are systematically investigated, and a novel GaN power IC platform on engineered bulk silicon substrate is proposed to effectively address these negative effects. For the GaN-on-Si power ICs, the integrated high-side (HS-) transistor and low-side (LS-) transistor have to share a common conductive silicon substrate. The termination of the substrate cannot be optimized for both the HS- and LS-transistors, so one of the transistors has to suffer a significant degradation in the dynamic RON. The proposed engineered bulk silicon substrate provides a common mechanical substrate for both the HS- and LS-transistors. For each of the transistors, the engineered substrate also provides a localized electrical substrate region. The electrical substrate region is isolated from the mechanical substrate by a reversely biased PN junction. TCAD simulations show that the substrate effects are completely eliminated in the novel GaN power IC on engineered bulk silicon substrate.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"67 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115676343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The Path Forward for GaN Power Devices GaN功率器件的发展方向
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360274
A. Lidow
{"title":"The Path Forward for GaN Power Devices","authors":"A. Lidow","doi":"10.1109/WiPDAAsia49671.2020.9360274","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360274","url":null,"abstract":"GaN power devices, discrete transistors and integrated circuits, have been in production for over 10 years and have made significant inroads in many applications that benefit from the smaller size and the faster switching speed. These devices are several times smaller than their aging silicon MOSFET ancestors and, largely because of this size advantage, have also become comparatively less costly to produce. In this paper we will discuss cost, power density, and integration challenges facing GaN producers. We will attempt to quantify the impact and set a reasonable timetable for implementation.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114889826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A Variable DC-Link Voltage Determination Method for Motor Drives with SiC MOSFETs SiC mosfet驱动电机的可变直流电压测定方法
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360266
Tien-Sheng Li, Yi-Han Yang, Che-An Cheng, Yaow-Ming Chen
{"title":"A Variable DC-Link Voltage Determination Method for Motor Drives with SiC MOSFETs","authors":"Tien-Sheng Li, Yi-Han Yang, Che-An Cheng, Yaow-Ming Chen","doi":"10.1109/WiPDAAsia49671.2020.9360266","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360266","url":null,"abstract":"This paper proposed a variable DC-link voltage determination method for motor drive using Silicon Carbide (SiC) MOSFETs. Usually, the voltage source inverter (VSI) with a constant DC-link voltage is adopted for the motor drive applications. However, operating in low-speed region does not require high voltage and higher voltage causes higher voltage harmonics. On the other hand, lower DC-link voltage limits its acceleration response. Therefore, an approach to determine the appropriate variable DC-link voltage is proposed in this paper. The power switches in the hardware prototype are implemented with SiC MOSFETs to achieve higher performance. Both simulation and experimental results are shown to verify the performance of the proposed DC-link voltage determination method.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114890395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信