All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-Temperature Power Switching Applications

Yuru Wang, G. Lyu, Jin Wei, Zheyang Zheng, Kailun Zhong, K. J. Chen
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Abstract

An all-wide-bandgap (all-WBG) cascode device with a low-voltage (LV) enhance-mode (E-mode) p-GaN gate HEMT as the control device and a high-voltage (HV) depletion-mode (D-mode) SiC JFET as the voltage blocking device has been systematically studied. The demonstrated device with a breakdown voltage (BV) rating of 1200 V and a static ON-resistance (RON) of 100 m$\Omega$, features small device capacitances, avalanche breakdown capability, thermally stable threshold voltage (VTH), no dynamic RON degradation, and small gate charge (QG). To identify its safe operation in the OFF-state with a high drain bias, the OFF-state middle point voltage (VM) between the E-mode device drain and D-mode device source is investigated. An adequately low OFF-state VMis achieved under both static and dynamic modes. Furthermore, a double-pulse test circuit is built to evaluate the transient switching performance at $25^{\circ}C$ and $150^{\circ}C$. Under 800-V/16-A testing conditions, high switching speed with low total switching losses of $214 \mu J$ and $236 \mu J$ are obtained at $25^{\circ}C$ and $150^{\circ}C$, respectively.
具有p-GaN栅极HEMT和SiC JFET的全wbg级联器件,用于高频和高温功率开关应用
系统研究了一种以低压(LV)增强模式(e模式)p-GaN栅极HEMT为控制器件,高压(HV)耗尽模式(d模式)SiC JFET为电压阻断器件的全宽带隙级联码器件。该器件的击穿电压(BV)额定值为1200 V,静态导通电阻(RON)为100 m $\Omega$,具有器件电容小、雪崩击穿能力、热稳定阈值电压(VTH)、无动态RON退化和栅极电荷(QG)小等特点。为了确定其在具有高漏极偏压的off状态下的安全运行,研究了e模式器件漏极和d模式器件源极之间的off状态中点电压(VM)。在静态和动态模式下都实现了足够低的off状态VMis。此外,建立了双脉冲测试电路,以评估在$25^{\circ}C$和$150^{\circ}C$处的瞬态开关性能。在800-V/16-A测试条件下,在$25^{\circ}C$和$150^{\circ}C$分别获得了高开关速度和低总开关损耗$214 \mu J$和$236 \mu J$。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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