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2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)最新文献

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Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module 高电流GaN hemt功率模块多层集成有机衬底的分析与优化
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360269
E. Gurpinar, Raj Sahu, B. Ozpineci, D. DeVoto
{"title":"Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module","authors":"E. Gurpinar, Raj Sahu, B. Ozpineci, D. DeVoto","doi":"10.1109/WiPDAAsia49671.2020.9360269","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360269","url":null,"abstract":"In this paper, analysis and optimization of a multi-layer organic substrate for high current GaN HEMT based power module are discussed. The organic multi-layer substrates can provide high electrical performance in terms of low parasitic inductance in the power loop by providing vertical layout, and shielding for reduction of common-mode noise, a common problem in fast switching power converters. Furthermore, high performance cooling solutions, such as micro-channel heat sinks, can be directly bonded to the substrate for optimum thermal management. The structure of the proposed architecture, thermal analysis and optimization of layer thickness, thermo-mechanical stress analysis of the GaN HEMT and development of a high-performance heat sink are discussed.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129576952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A SiC IGBT Behavioral Model with High Accuracy and Fast Convergence 高精度、快速收敛的SiC IGBT行为模型
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360262
Lubin Han, Lin Liang, Yong Kang
{"title":"A SiC IGBT Behavioral Model with High Accuracy and Fast Convergence","authors":"Lubin Han, Lin Liang, Yong Kang","doi":"10.1109/WiPDAAsia49671.2020.9360262","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360262","url":null,"abstract":"In order to study the mechanisms of SiC IGBT, optimize the SiC IGBT based power conversion system and predict the electro-thermal performance of the circuits, a simple, high-speed and accurate behavioral model of SiC IGBT is proposed. In this model, three controlled current sources are used to simulate the voltage and displacement current of the three parasitic capacitors of SiC IGBT. The other two controlled current sources are used to simulate the I-V characteristics and tail current characteristics of SiC IGBT respectively. In the model, the interpolation method instead of the conventional polynomial fitting method is adopted, which could simulate the static I-V characteristics and C-V characteristics more accurately. The method to extract the C-V curves by using dv/dt and displacement current is proposed, which could accurately simulate the punch-through effect of SiC IGBT under high voltage. The proposed model is more concise, more accurate and faster than the existing complex physical based mathematical model, which is suitable for system level circuit simulation based on SiC IGBT.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"1 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132610131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 1 MHz Boost DC-DC Converter with Turn on ZCS Capability to Reduce EMI 具有开启ZCS能力的1mhz升压DC-DC变换器以降低EMI
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360268
H. Yoshioka, J. Furuta, Kazutoshi Kobayashi
{"title":"A 1 MHz Boost DC-DC Converter with Turn on ZCS Capability to Reduce EMI","authors":"H. Yoshioka, J. Furuta, Kazutoshi Kobayashi","doi":"10.1109/WiPDAAsia49671.2020.9360268","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360268","url":null,"abstract":"This paper proposes a boost DC-DC converter with turn-on zero current switching (ZCS) capability to suppress electromagnetic interference (EMI) generated from an output diode. When a switching component turn on, reverse current flows from the output diode. In SiC-SBD, reverse recovery time is very short and conduction loss is small, but noise is increased by switching speed over MHz. By operating in discontinuous current mode, noise at turn-on can be reduced. However, at high frequency over MHz, the conduction loss increases because peak current flowing through the switching component and inductor increases. Radiated EMI of the boost DC-DC converter is reduced by the ZCS soft switching at turn on operating in the continuous current mode. Measurement results of EMI of the ZCS DC-DC converter were presented to confirm EMI suppression from the ZCS operation.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131859648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
48 V-12 V Isolated-type DC/DC converter miniaturized using GaN transistors and operating at 2-MHz switching frequency Koki Sakamoto Atsushi Yamaguchi Ken Nakahara 48 V-12 V隔离型DC/DC变换器小型化，采用GaN晶体管，工作在2 mhz开关频率
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360289
K. Sakamoto, Atsushi Yamaguchi, K. Nakahara
{"title":"48 V-12 V Isolated-type DC/DC converter miniaturized using GaN transistors and operating at 2-MHz switching frequency Koki Sakamoto Atsushi Yamaguchi Ken Nakahara","authors":"K. Sakamoto, Atsushi Yamaguchi, K. Nakahara","doi":"10.1109/WiPDAAsia49671.2020.9360289","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360289","url":null,"abstract":"The compatibility of high switching-frequency $(f_{sw})$ and high efficiency is achieved using GaN transistors in 48 V-12 V isolation-type DC/DC converter. High fsw increases power loss, but generate a downward trend for the required magnetic flux per switch. Hence, an optimal fsw is found for gaining the compatibility. The prior-to-experiment loss estimation proves that $f_{sw}sim 2$ MHz is optimal, and a converter with the size of 25.0 mm $times$16.8 mm $times$ 4.5 mm is made assuming that GaN-FETs are employed. With an air-cooled condition of 2m/s, this converter can transfer 129 W output power and its maximum power conversion efficiency reach to 95.3%.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129216032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Parasitic Parameters Analysis and Design of Snubber Circuit on PCB for High-frequency Wireless Power Transfer 高频无线传输PCB缓冲电路的寄生参数分析与设计
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360290
Masamichi Yamaguchi, K. Kusaka, J. Itoh
{"title":"Parasitic Parameters Analysis and Design of Snubber Circuit on PCB for High-frequency Wireless Power Transfer","authors":"Masamichi Yamaguchi, K. Kusaka, J. Itoh","doi":"10.1109/WiPDAAsia49671.2020.9360290","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360290","url":null,"abstract":"This paper presents an analysis of the PCB pattern, which is for a high-frequency inverter circuit. In a high-frequency inverter circuit, the design of the snubber circuit, which suppresses surge voltage, is essential to achieve kilowatt operation. The authors are aiming to simulate a surge voltage in order to decide the parameters of the snubber circuit. In this paper, the surge voltage is simulated using the analysis result of the PCB and the models of the passive components. Furthermore, the surge voltage with changing the snubber capacitor is evaluated in order to make the relationship between the surge voltage and the snubber circuit parameters as the first step of the parameters design by using simulation.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"380 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127898663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of Al-foil/p -4H-SiC SBDs Fabricated by DW with Variation of Process Conditions DW制备al -箔/p -4H-SiC固态硬盘的工艺条件变化
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360265
Mehadi Hasan Ziko, A. Koel, T. Rang
{"title":"Characterization of Al-foil/p -4H-SiC SBDs Fabricated by DW with Variation of Process Conditions","authors":"Mehadi Hasan Ziko, A. Koel, T. Rang","doi":"10.1109/WiPDAAsia49671.2020.9360265","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360265","url":null,"abstract":"Silicon carbide (SiC) is a wide-bandgap (WBG) semiconductor material with high thermal conductivity and radiation harness that have good potential to develop a new generation of power devices for operating at the higher temperature, high frequency, high power applications. In this paper, various manufacturing process (MP) parameters of diffusion welding (DW) p-type 4H-SiC Schottky contact developments are studied. Deposition temperature and pressure influence the DW Schottky barrier diodes (SBD) electrical characteristics and observed their barrier inhomogeneity. The lower doping concentration in the epilayer improves the Schottky contact characteristics with the same MP parameters. Additionally, Schottky contact with DW deposition technology shows better electrical contact compare to ion-sputtering deposition technique. Furthermore, temperature dependency of forward current-voltage (I–V), capacitance-voltage (C–V), and barrier height correspond to ideality factors measurements of DW two-MP parameters shows that there are higher barrier inhomogeneities at the metal and SiC interface compare to one-MP parameters for Aluminum (Al)-foil/p 4H–SiC SBDs.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124358153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Study on MHz Switching Operation in Flyback Converter for Lithium Ion Battery and its Parallelization 锂离子电池反激变换器中MHz开关操作及其并行化研究
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360294
Kentaro Nakayama, N. Satoh
{"title":"A Study on MHz Switching Operation in Flyback Converter for Lithium Ion Battery and its Parallelization","authors":"Kentaro Nakayama, N. Satoh","doi":"10.1109/WiPDAAsia49671.2020.9360294","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360294","url":null,"abstract":"Lithium-ion batteries (LiBs) have been widely used as consumer rechargeable batteries. We use the flyback topology, which is a type of isolated DC/DC converter, as the boosting circuit for an LiB. In this study, the flyback converter is operated with a single LiB in both the main and gate drive circuits. The switching frequency of conventional flyback converters is in the range of several hundred kHz. However, we aim to drive the flyback converter at 2.1MHz. Accordingly, Si and GaN devices are compared, and Liqualloy magnetic materials are investigated. Then, the components suitable for our field of use are reexamined. Additionally, our approach for the parallelization of the circuit to compensate for the drop in the output voltage of the LiB is described.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130135074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of Press-Pack Packaging for High Voltage SiC DSRD Stack 高压SiC dsd堆叠压包封装设计
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360250
Yingjie Yang, Lin Liang, Hai Shang, Yong Kang, Hui Yan
{"title":"Design of Press-Pack Packaging for High Voltage SiC DSRD Stack","authors":"Yingjie Yang, Lin Liang, Hai Shang, Yong Kang, Hui Yan","doi":"10.1109/WiPDAAsia49671.2020.9360250","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360250","url":null,"abstract":"SiC drift step recovery diode (DSRD) could be applied in the field of nanosecond high-power pulses. There is a demand for packaging for higher voltage and higher speed SiC DSRD. This paper proposes a stacked structure consisting of several high voltage SiC DSRD chips connected in series by rigid press-pack packaging. Finite element simulations performed to investigate the parasitic parameter, thermal performance in the packaging show that the packaging gets low parasitic inductance of about 3.5 nH and favorable heat dissipation capability. For the high-voltage SiC DSRD press-pack modules, the high field concentration around the DSRD chips is more critical. The objective is to build uniform electric field by structural optimization. A methodology to optimize the length of the metal conductive layer inside the packaging is proposed. Finally, the impact of the length on the electric field distribution is investigated quantitatively with Maxwell simulations. The electric field optimization brought by the platform reduces the maximum electric field intensity by 16%, which provides a packaging design reference for the upcoming high-voltage SiC DSRD devices.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134525387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
3.3-kV SiC MOSFET Performance and Short-Circuit Capability 3.3 kv SiC MOSFET的性能和短路性能
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360270
Diang Xing, Chen Xie, Ke Wang, Tianshi Liu, Boxue Hu, Jin Wang, A. Agarwal, R. Singh, S. Atcitty
{"title":"3.3-kV SiC MOSFET Performance and Short-Circuit Capability","authors":"Diang Xing, Chen Xie, Ke Wang, Tianshi Liu, Boxue Hu, Jin Wang, A. Agarwal, R. Singh, S. Atcitty","doi":"10.1109/WiPDAAsia49671.2020.9360270","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360270","url":null,"abstract":"This paper compares the long-channel and short-channel 3300-V, 5-A silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) manufactured by GeneSiC regarding static characteristics and short-circuit (SC) sustaining capability. Their saturation currents were measured up to 2200-V drain bias at different gate voltages. The SC withstand times of two types of devices were measured at 2200-V drain voltage and 1S-V gate voltage. Their SC test results were compared with 1200-V SiC MOSFETs from four different manufactures, which suggested that SiC MOSFETs with longer channel length should have longer sustaining times in a SC event. In addition, the device dynamic characteristic was evaluated. A comprehensive simulation program with integrated circuit emphasis (SPICE) model was developed based on the device test results.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133785651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Parasitic Capacitances Characterization of Double-Sided Cooling Power Module Based on GaN Devices 基于GaN器件的双面散热电源模块寄生电容特性研究
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360259
Bingyang Li, Kangping Wang, Hongkeng Zhu, Xu Yang, Laili Wang
{"title":"Parasitic Capacitances Characterization of Double-Sided Cooling Power Module Based on GaN Devices","authors":"Bingyang Li, Kangping Wang, Hongkeng Zhu, Xu Yang, Laili Wang","doi":"10.1109/WiPDAAsia49671.2020.9360259","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360259","url":null,"abstract":"The parasitic capacitances of a novel double-sided cooling structure of GaN power module are analyzed in this paper. Due to the additional top ceramic substrate of the structure, parasitic capacitances become more complex. By analysis, gate-source parasitic capacitance and gate-drain parasitic capacitance of all GaN devices and drain-source parasitic capacitance of upper GaN device of half bridge circuit are less than 1% of the corresponding intrinsic capacitances. However, the drain-source parasitic capacitance (14% of Coss) of bottom GaN device of half bridge circuit increases by 30% compared with traditional single-sided cooling module, which is acceptable since the thermal resistance of this structure is about halved.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116046559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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