2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)最新文献_第3页

2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle 商业铸造厂生产的2.3 kv, 5-A 4H-SiC Ti和Ni JBS整流器:植入物横向分散的影响

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360272

Aditi Agarwal, Kijeong Han, B. Baliga

{"title":"2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle","authors":"Aditi Agarwal, Kijeong Han, B. Baliga","doi":"10.1109/WiPDAAsia49671.2020.9360272","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360272","url":null,"abstract":"This paper reports characteristics of 2.3-kV 5-A 4H-SiC Junction Barrier controlled Schottky (JBS) rectifiers manufactured in a 6-inch commercial foundry. Two types (Ni and Ti Schottky contact metal) of JBS rectifiers were successfully fabricated. The electrical performance of the Ni and Ti JBS rectifiers is compared at temperatures up to 1500 C. The on-state voltage drop (@ 5 A) of the Ti devices increased from 1.4 to 1.8 V with increasing temperature while that for Ni devices increased from 2.0 to 2.3 V, maintaining values well below that of the SiC P-N junction as required for a JBS diode. The leakage current for the Ni JBS diodes remained below 2 nA @ 500V even up to 1500 C. In contrast, an increase in leakage current to an acceptable level of 100 nA @ 500V was observed for the Ti JBS diodes at 150°C due to its lower barrier height.Analytical modelling indicated that lateral straggle of the $P^{+}$ ion-implant plays an important role in determining the measured on-state voltage drop and reverse leakage characteristics. Simulations were performed to confirm the effect of lateral implant straggle. The simulations demonstrated that lateral implant straggle increases the on-resistance and reduces the leakage current of the JBS rectifier but has no effect on the knee voltage. The experimental results in this paper demonstrate that 4H-SiC JBS rectifiers with 2.3 kV blocking voltage can be manufactured using either Ni or Ti Schottky contacts with excellent on-state voltage drop and leakage current up to 150$^{0}C$.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130349248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Experimental Investigation on Failure Mechanism of SiC Power MOSFETs under Single Pulse Avalanche Stress 单脉冲雪崩应力作用下SiC功率mosfet失效机理的实验研究

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360260

Zijian Gao, Qing Guo, Na Ren, Kuang Sheng

引用次数: 2

Design and Fabrication for High-Voltage Silicon Carbide Drift Step Recovery Diode 高压碳化硅漂移阶跃恢复二极管的设计与制造

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360296

Xiaoxue Yan, Lin Liang, Xinyuan Huang

{"title":"Design and Fabrication for High-Voltage Silicon Carbide Drift Step Recovery Diode","authors":"Xiaoxue Yan, Lin Liang, Xinyuan Huang","doi":"10.1109/WiPDAAsia49671.2020.9360296","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360296","url":null,"abstract":"A high-voltage drift step recovery diode (DSRD) based on silicon carbide (SiC) with a 6.2 kV blocking voltage of a single die is reported in this paper. The design and fabrication process of the SiC DSRD are also included. The bulk structure parameters of the high-voltage SiC DSRD and the termination structure parameters of a 3-step etched junction termination extension (JTE) are determined by the TCAD simulation. A pulse test circuit based on the high-voltage DSRD is designed. A high voltage pulse with a rise time of 0.8 ns and an amplitude of 5 kV is obtained through the TCAD simulation. In order to meet the expected blocking capability, the termination preparation process including the etching sequence of multi-step structure and the microtrench in inductively coupled plasma (ICP) etching of SiC is mainly investigated. The test results show that the sample can block a reverse voltage of 6.2 kV as a single die with a leakage current of $1.3 mu A$ at room temperature. In addition, the specific ohmic contact resistance of the anode calculated by C-TLM method is $1.56 times 10^{-6} Omega cdot$ cm2.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132223602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization of 1-MW Solar Inverter with 1.7-kV SiC MOSFET Module 1.7 kv SiC MOSFET模块1mw太阳能逆变器的优化

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360277

Ki-Bum Park, F. Kieferndorf, R. Burkart, B. Agostini

引用次数: 1

HESO: A Heterogeneous Energy Spreading Object - An Application of Power Packet Technology to Mobile Vehicle- HESO:一个异构能量扩散对象——动力包技术在移动车辆上的应用

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360284

H. Arai, Takuya Matsuda, Hidetaka Takai, Kentaro Nakayama, N. Satoh

引用次数: 1

Gate-Stress-Induced Threshold Voltage Instabilites, a Comparison of Ohmic and Schottky p-Gate GaN HEMTs 栅极应力诱导的阈值电压不稳定性，欧姆和肖特基p栅极GaN hemt的比较

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360288

T. Oeder, M. Pfost

引用次数: 0

General Equation to Determine Design Rules for Mitigating Partial Discharge and Electrical Breakdown in Power Module Layouts 确定功率模块布局中减轻局部放电和击穿设计规则的一般方程

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360263

Shilpi Mukherjee, Yarui Peng, H. Mantooth

引用次数: 2

Edge Termination Structures for 3.3 kV 4H-SiC Devices 3.3 kV 4H-SiC器件边缘端接结构

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360283

Bi-Fan Dong, Kung-Yen Lee, Yun-Kai Lai, Chen-Dong Tzou, Chih-Chao Hsu, Yi-Ting Chen

引用次数: 1

Common-Mode EMI Modeling and Analysis for GaN-Based Full-Bridge CRM PFC under Unipolar PWM Scheme 单极PWM方案下基于gan的全桥CRM PFC共模EMI建模与分析

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360281

Hongkeng Zhu, Bingyang Li, Kangping Wang, Xu Yang

引用次数: 2

A Novel 600V Lateral RESURF 4H-SiC MESFET with Sloped Field Plate for High Power and High Frequency Applications 一种适用于大功率高频应用的新型600V横向RESURF倾斜场极板4H-SiC MESFET

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI: 10.1109/WiPDAAsia49671.2020.9360295

Atsushi Shimbori, A. Huang

引用次数: 2