2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle

Abstract

This paper reports characteristics of 2.3-kV 5-A 4H-SiC Junction Barrier controlled Schottky (JBS) rectifiers manufactured in a 6-inch commercial foundry. Two types (Ni and Ti Schottky contact metal) of JBS rectifiers were successfully fabricated. The electrical performance of the Ni and Ti JBS rectifiers is compared at temperatures up to 1500 C. The on-state voltage drop (@ 5 A) of the Ti devices increased from 1.4 to 1.8 V with increasing temperature while that for Ni devices increased from 2.0 to 2.3 V, maintaining values well below that of the SiC P-N junction as required for a JBS diode. The leakage current for the Ni JBS diodes remained below 2 nA @ 500V even up to 1500 C. In contrast, an increase in leakage current to an acceptable level of 100 nA @ 500V was observed for the Ti JBS diodes at 150°C due to its lower barrier height.Analytical modelling indicated that lateral straggle of the $P^{+}$ ion-implant plays an important role in determining the measured on-state voltage drop and reverse leakage characteristics. Simulations were performed to confirm the effect of lateral implant straggle. The simulations demonstrated that lateral implant straggle increases the on-resistance and reduces the leakage current of the JBS rectifier but has no effect on the knee voltage. The experimental results in this paper demonstrate that 4H-SiC JBS rectifiers with 2.3 kV blocking voltage can be manufactured using either Ni or Ti Schottky contacts with excellent on-state voltage drop and leakage current up to 150$^{0}C$.