Ki-Bum Park, F. Kieferndorf, R. Burkart, B. Agostini
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引用次数: 1
Abstract
Feasibility study of high current rating 1.7-kV SiC MOSFET module is carried out targeting for high power 1.5-kV PV central inverter. Based on electrical and thermal characterization data of the module, efficiency-power density Pareto optimization of total system is provided. The analysis considers the coupling between semiconductor, cooling system, LCL filter, and DC link. Particularly, comparative evaluation between 1.2-kV Si IGBT-based 3-level topology and 1.7-kV SiC MOSFET-based 2-level one is focused. In addition, potential benefit of the bipolar PV system is discussed.
针对大功率1.5 kv光伏中央逆变器,进行了高额定电流1.7 kv SiC MOSFET模块的可行性研究。基于模块的电学和热特性数据,给出了整个系统的效率-功率密度帕累托优化。分析考虑了半导体、冷却系统、LCL滤波器和直流链路之间的耦合。重点对基于1.2 kv Si igbt的3级拓扑和基于1.7 kv SiC mosfet的2级拓扑进行了比较评价。此外,还讨论了双极光伏系统的潜在效益。