3.3 kV 4H-SiC器件边缘端接结构

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI:10.1109/WiPDAAsia49671.2020.9360283

Bi-Fan Dong, Kung-Yen Lee, Yun-Kai Lai, Chen-Dong Tzou, Chih-Chao Hsu, Yi-Ting Chen

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引用次数: 1

摘要

本文设计了3.3 kV 4H-SiC功率器件的边缘端接(ET)。所提出的结构被称为环形辅助双区结终端扩展(RA-DZ-JTE)。RA-DZ-JTE可以大大降低功率器件角落和边缘的电场峰值，从而获得更高的击穿电压(BV)。仿真结果表明，在相对较低的JTE剂量条件下，BV大于3.9 kV, BV对JTE剂量的敏感性较低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Edge Termination Structures for 3.3 kV 4H-SiC Devices

In this paper, the edge termination (ET) for 3.3 kV 4H-SiC power devices was designed. The proposed structure is referred to as Ring-Assisted Double-Zone Junction Termination Extension (RA-DZ-JTE). The RA-DZ-JTE can greatly reduce the peak of electric fields at the corners and edges of the power device, resulting in a superior breakdown voltage (BV). The simulation results demonstrate that the BV is over 3.9 kV and the sensitivity of BV to JTE dose is lower in a relatively low JTE dose condition.

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2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

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